栅控PNP晶体管ELDRS效应的开关剂量率加速试验方法及机理

发布时间：2018-06-19 03:03

本文选题：栅控横向PNP双极晶体管 + 开关剂量率　；参考：《哈尔滨工业大学》2017年硕士论文

【摘要】：本文以60Co-γ源作为辐照源,选用栅控横向PNP型(GLPNP)晶体管为研究对象,在100rad/s、10mrad/s和变换剂量率下分别进行了辐照试验,研究了不同辐照条件对GLPNP晶体管电离辐照损伤缺陷演化行为的影响。辐照过程中,测试了GLPNP晶体管电性能随辐照剂量的变化规律,并结合栅扫描测试(GS)及辐照感生缺陷分离技术,验证了开关剂量率加速辐照试验方法的可行性并探究了其加速机理。研究结果表明,晶体管的电流增益在10mrad/s辐照剂量率条件下的退化程度较100rad/s辐照严重。基本微观缺陷测试分析表明,与100rad/s辐照相比,相同辐照剂量下,10mrad/s辐照时晶体管内部产生的氧化物电荷浓度较少,但是其内部界面态浓度更多。并且,在低剂量率辐照条件下,相同辐照剂量条件界面态增长速率较快,导致下降更加迅速,致使晶体管的电性能退化更加严重。通过模拟分析揭示出了ELDRS效应主要是由于氧化物层中的空穴俘获陷阱和复合中心对电离诱导空穴的俘获和复合竞争机制所引起。开关剂量率试验表明,当辐照剂量率由高到低切换的短时间内,变换剂量率效果与高、低剂量率单独辐照相同。但切换为低剂量率后,随总剂量逐渐增加,开关剂量率所造成的损伤要远小于低剂量率单独辐照所造成的损伤。上述结果说明,开关剂量率加速试验方法虽然实现了一定程度的加速,但先进行高剂量率辐照会对后期的低剂量率辐照产生影响,导致辐照诱导缺陷的退火速率加快,使得电性能的损伤程度减小。
[Abstract]:In this paper, 60Co- 纬 source is used as irradiation source, gate controlled transverse PNP type GLPNPT is chosen as the object of study, irradiation experiments are carried out at 100 radr / s 10mradr / s and conversion dose rate, respectively. The effects of different irradiation conditions on the evolution of ionizing radiation damage defects in GLPNP transistors were studied. In the process of irradiation, the variation of the electrical properties of GLPNP transistors with the irradiation dose was tested, and combined with the gate scanning test of GSH) and the separation technology of irradiation-induced defects, The feasibility of the switching dose rate accelerated irradiation test method was verified and the acceleration mechanism was explored. The results show that the current gain of the transistor is more degraded than that of 100rad/s irradiation at the dose rate of 10mrad/s irradiation. The basic microscopic defect analysis shows that compared with 100rad/s irradiation, the oxide charge concentration in the transistor is less when the irradiation dose is 10 mradr / s, but the interfacial state concentration is more. In addition, under the condition of low dose rate irradiation, the growth rate of interface states is faster, which leads to the decrease more rapidly, and the degradation of the transistor electrical performance is more serious. The simulation results show that the ELDRS effect is mainly caused by the hole trapping trap in oxide layer and the mechanism of ionization induced hole capture and compound competition in the composite center. The switching dose rate test shows that when the dose rate is switched from high to low, the effect of shift dose rate is the same as that of high dose rate and low dose rate alone. However, with the increase of total dose, the damage caused by switching dose rate is much smaller than that caused by low dose rate irradiation alone. The above results show that although the switching dose rate accelerated test method has achieved a certain degree of acceleration, the first high dose rate irradiation will have an effect on the later low dose rate irradiation, resulting in the accelerated annealing rate of radiation induced defects. The damage degree of electrical property is reduced.
【学位授予单位】：哈尔滨工业大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN32

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