多层结构的带通滤波器设计

发布时间：2018-06-19 04:41

本文选题：低温共烧陶瓷 + 阶梯阻抗谐振器　；参考：《昆明理工大学》2017年硕士论文

【摘要】：随着通信、电子等领域的飞速发展,小型化、低成本、高性能的电子器件越来越成为研发的热点,尤其是在射频收发系统中,滤波是不可缺少的环节,滤波器的更高性能和更小尺寸成为新的设计方向,传统工艺的滤波器并不能兼备高的滤波器性能和小的器件尺寸,而低温共烧陶瓷技术的不断发展,为两者兼备的滤波器设计带来可能。本文采用低温共烧陶瓷技术进行六阶带通滤波器的设计,采用阶梯阻抗谐振器结构实现灵活设计,实现了 S波段的高性能、高抑制的带通滤波器的设计,滤波器的整体尺寸仅为6.8mm×4.2mm× 1.5mm。滤波器作为THz设备必不可少的电子器件,对其进行研究和设计具有重大的意义。本文采用基片集成波导结构进行了 THz带通滤波器的设计,采用硅基垂直通孔技术进行通孔的制作,保证了通孔的孔径精度,抑制了 THz滤波器中心频率的漂移,结合集成电路的3D堆叠技术,进行基片集成波导谐振腔的立体化堆叠,满足滤波器的小型化需求。
[Abstract]:With the rapid development of communication, electronics and other fields, miniaturization, low cost and high performance electronic devices have become a hot spot in the research and development, especially in RF transceiver systems, filtering is an indispensable link. The higher performance and smaller size of the filter become the new design direction. The traditional process filter can not have the high filter performance and the small device size, but the low temperature co-fired ceramic technology develops unceasingly. It is possible to design both filters. In this paper, the sixth order band-pass filter is designed by using low temperature co-fired ceramic technology, and the flexible design is realized by using step impedance resonator structure. The design of high performance and high suppression band-pass filter in S-band is realized. The overall size of the filter is only 6.8mm 脳 4.2mm 脳 1.5mm. As an indispensable electronic device in THz equipment, it is of great significance to study and design the filter. In this paper, the THz bandpass filter is designed with the substrate integrated waveguide structure, and the through hole is fabricated by using the silicon based vertical through hole technology, which ensures the aperture accuracy of the through hole and restrains the drift of the center frequency of the THz filter. Combined with 3D stacking technology of integrated circuits, three-dimensional stacking of substrates integrated waveguide resonators is carried out to meet the needs of filter miniaturization.
【学位授予单位】：昆明理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN713.5

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