一种开关过程优化的高压IGBT驱动电路设计

发布时间：2018-06-22 02:22

本文选题：IGBT + 驱动电路　；参考：《电子科技大学》2017年硕士论文

【摘要】：绝缘栅双极型晶体管(Insulated Gate Bipolar Transistor,IGBT)结合了MOSFET和流控器件的晶闸管的优点,具有开关速度快、电流容量大、耐压能力强、通态饱和压降低且驱动电路简单等特点,近年来在电力电子领域成为热点,与其相对应的一系列IGBT驱动电路也被广泛的开发和应用。本文结合IGBT的开关特性,设计出了一款开关过程优化了的高压IGBT驱动电路,该电路结合IGBT的动态特性,采用分段驱动的方式加快IGBT的开启速度,同时通过调节放电支路的电流值来优化IGBT的关断过程。电路为全桥负高压供电的拓扑结构,负高压为400V,供电电平为15V,并集成了数字电路与模拟电路,具有结构简单,稳定性好等优点,可用于HID氙气灯的镇流器中。本文先是介绍了IGBT器件的基本结构和特性,包括静态特性和开关特性,对IGBT的开启和关断全过程做了详细的阐述和推导。并对IGBT开启和关断过程中可能存在的电流过冲和电压过冲做了分析。然后对IGBT驱动电路中常见的拓扑结构和隔离方式做了对比,并分析了驱动电压、栅极电阻、开关速度等参数的设计思路,为之后驱动电路的设计提供了理论基础。设计的IGBT驱动电路主要包括保护模块,控制模块和驱动模块三个部分。其中保护模块包括欠压保护电路、过温保护电路、过流保护电路三个子电路,以保证电路工作在安全的工作状态;控制模块包括避免同时导通电路、控制信号产生电路两个子电路,控制信号产生电路里边包括施密特触发器,可以对输入信号做整形,同时还会产生额外的两个脉冲信号用于IGBT的分段开启;驱动模块则是通过前级产生的控制信号控制IGBT器件的开启关断,给负载供电。最后利用Cadence、Hspice等设计验证软件对子电路和系统整体电路进行了仿真。整体仿真包括系统正常工作状态下的仿真及处于欠压、过温、过流等异常工作状态下的仿真,仿真优化结果达到设计目标。
[Abstract]:Insulated Gate Bipolar Transistor (IGBT) combines the advantages of MOSFET and thyristor of current control device. It has the advantages of fast switching speed, large current capacity, strong withstand voltage, low on-state saturation voltage and simple drive circuit. In recent years, it has become a hot spot in the field of power electronics, and a series of IGBT driver circuits have been widely developed and applied. According to the switching characteristics of IGBT, this paper designs a high voltage IGBT drive circuit which is optimized by switching process. The circuit combines the dynamic characteristics of IGBT and accelerates the opening speed of IGBT by using the method of subsection driving. At the same time, the switching off process of IGBT is optimized by adjusting the current value of discharge branch. The circuit is a topology of full-bridge negative high-voltage power supply, with a negative voltage of 400V and a power supply level of 15V. The circuit integrates digital circuit and analog circuit. It has the advantages of simple structure and good stability. It can be used in the ballast of hid xenon lamp. This paper first introduces the basic structure and characteristics of IGBT devices, including static characteristics and switching characteristics, and makes a detailed description and derivation of the whole process of IGBT opening and turning off. The current overshoot and voltage overshoot that may exist in the process of IGBT opening and switching off are analyzed. Then the common topology and isolation mode of IGBT drive circuit are compared, and the design ideas of driving voltage, gate resistance, switch speed and other parameters are analyzed, which provides a theoretical basis for the later design of drive circuit. The IGBT driver circuit includes three parts: protection module, control module and drive module. The protection module includes three sub-circuits: the under-voltage protection circuit, the over-temperature protection circuit and the over-current protection circuit to ensure that the circuit works in a safe working state; The control signal generation circuit includes Schmitt flip-flop, which can shape the input signal and generate two additional pulse signals to open the IGBT. The driving module controls the switching off of IGBT device through the control signal generated by the previous stage to supply power to the load. Finally, the sub-circuit and the whole circuit of the system are simulated by the design and verification software of Cadence and HSpice. The whole simulation includes the simulation of the system in normal working state and the simulation under the abnormal working conditions such as undervoltage, overtemperature, overcurrent, etc. The simulation optimization results reach the design goal.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN322.8

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