基于失效物理的多芯片组件可靠性分析

发布时间：2018-06-24 04:30

本文选题：多芯片组件 + 失效物理　；参考：《电子科技大学》2017年硕士论文

【摘要】：多芯片组件封装技术在电子工业中受到很广泛的关注,它是一种能够实现电子系统高效运转和电子整机小型化的有效途径,能够发挥半导体器件集成电路的优良性能,但是其复杂的结构与不同的服役环境使多芯片组件的可靠性分析具有自己的特殊性,因此其研究方法和手段对保证多芯片组件产品在全寿命周期内的质量具有重要意义。在正常工作状态下,多芯片组件在全寿命周期内执行的任务不同,其承受的环境载荷与应力也不尽相同。本文结合相关项目经验,将从多芯片组件物理失效的角度出发,考虑多芯片组件的实际设计与环境负载条件,对其进行可靠性分析,并开展基于失效物理的多芯片组件的寿命预测与可靠性分析方法的研究。主要内容如下:首先,考虑到多芯片组件封装形式的特点,根据多芯片组件的不同方面,从物理和化学角度详细介绍多芯片组件中各个模块可靠性对整体可靠性的影响,并揭示其失效机理与失效模式特点。在此基础上,研究多芯片组件全寿命周期内在不同任务剖面和不同应力剖面下的失效机制,并且考虑影响多芯片组件固有可靠性的设计、材料、工艺等内在因素,建立基于失效物理的可靠性技术框架来解决多芯片组件的寿命预测问题,并结合有限元分析模拟多芯片组件实际工作条件,完成多芯片组件在热循环下的有限元分析。针对多芯片组件焊点失效这一典型失效模式,分析其寿命预测模型,并用有限元分析的方法对其进行在热循环载荷下的寿命预测。其次,针对多芯片组件多种失效模式共存的问题,根据国内外多芯片组件失效模式的研究现状,对多芯片组件的过应力失效和损耗失效进行竞争失效分析研究,运用马里兰大学多芯片组件可靠性试验相关数据,揭示多芯片组件失效本质与过程。考虑到失效模式间的相关性,通过建立多元对数正态分布函数的联合分布模型进行相关性假设检验,运用相关性系数来描述失效模式间的相关关系。最后,在失效物理分析的基础上,对多芯片组件加速寿命试验进行了初步探索。分析三种加速寿命方法的优劣性,结合多芯片组件实际工况及可靠性特点,建立一种改进后的加速寿命试验。并确定加速寿命试验选择的应力以及其施加方式。最后对改进的试验方案进行可靠性统计分析。
[Abstract]:Multi-chip module packaging technology has been widely concerned in the electronic industry. It is an effective way to realize the efficient operation of electronic system and the miniaturization of electronic whole machine, and it can give play to the excellent performance of semiconductor device integrated circuit. However, its complex structure and different service environment make the reliability analysis of multi-chip modules have its own particularity, so its research methods and means are of great significance to ensure the quality of multi-chip modules in the whole life cycle. Under the normal working condition, the multi-chip modules perform different tasks in the whole life cycle, and the environmental loads and stresses are also different. Based on the experience of related projects, this paper analyzes the reliability of multi-chip modules from the point of view of physical failure of multi-chip modules, considering the actual design and environmental load conditions of multi-chip modules. The methods of life prediction and reliability analysis of multi-chip components based on failure physics are also studied. The main contents are as follows: first of all, considering the characteristics of multi-chip module packaging, according to the different aspects of multi-chip module, the physical and chemical aspects of the impact of the reliability of each module on the overall reliability of the multi-chip module are introduced in detail. The failure mechanism and the characteristics of failure mode are revealed. On this basis, the failure mechanism of multi-chip modules under different mission profiles and different stress profiles during their life cycle is studied, and the inherent factors affecting the inherent reliability of multi-chip modules, such as design, material and process, are considered. The reliability technology framework based on failure physics is established to solve the life prediction problem of multi-chip modules. The finite element analysis of multi-chip modules under thermal cycling is completed by simulating the actual working conditions of multi-chip modules with finite element analysis. Aiming at the typical failure mode of solder joint of multi-chip module, the life prediction model is analyzed, and its life under thermal cycling load is predicted by finite element method. Secondly, aiming at the coexistence of multiple failure modes of multi-chip modules, according to the current research situation of multi-chip modules at home and abroad, the competitive failure analysis of multi-chip modules is carried out. Based on the reliability test data of multi-chip modules at the University of Maryland, the failure nature and process of multi-chip modules are revealed. Considering the correlation between failure modes, a joint distribution model of multivariate logarithmic normal distribution function is established to test the correlation hypothesis, and the correlation coefficient is used to describe the correlation relationship between failure modes. Finally, on the basis of failure physical analysis, the accelerated life test of multi-chip modules is preliminarily explored. The advantages and disadvantages of the three accelerated life methods are analyzed and an improved accelerated life test is established according to the actual working conditions and reliability characteristics of multi-chip modules. The stress selected by accelerated life test and its application mode are determined. Finally, the reliability of the improved test scheme is analyzed statistically.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN405

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