中高压大功率IGBT驱动器有源箝位技术研究

发布时间：2018-06-25 23:11

本文选题：绝缘栅双极性晶体管 + 驱动器　；参考：《电力电子技术》2017年07期

【摘要】：中高压大功率终止型绝缘栅双极性晶体管(IGBT)中驱动器一般通过有源箝位电路来抑制其大电流关断时的电压尖峰。提出将有源箝位电路等效为典型闭环反馈控制系统并进行线性化处理的时域分析方法,用于分析有源箝位过程初期的动态性能。提出一种针对稳定箝位过程的静态分析方法,为有源箝位电路参数取值及确定箝位工作点提供依据。针对双N-MOSFET驱动级,设计了一种对驱动级进行棒-棒调节的有源箝位电路,该电路能降低瞬态电压抑制二极管(TVS)击穿电流,从而降低其在箝位过程中的损耗。最后通过仿真和实验结果验证了理论分析和电路设计的可行性、准确性、有效性。
[Abstract]:In high voltage and high power terminating gate bipolar transistors (IGBT), the voltage spike at high current turn-off is generally suppressed by the active clamp circuit. The active clamp circuit is equivalent to a typical closed-loop feedback control system and linearized in time domain analysis method is proposed to analyze the dynamic performance of the active clamp circuit in the initial stage of the active clamping process. This paper presents a static analysis method for the stable clamping process, which provides a basis for determining the parameters of the active clamp circuit and determining the clamping operating point. For the dual N-MOSFET drive stage, an active clamp circuit is designed to regulate the driver stage. The circuit can reduce the breakdown current of transient voltage suppression diode (TVs) and thus reduce the loss during the clamping process. Finally, the feasibility, accuracy and validity of theoretical analysis and circuit design are verified by simulation and experimental results.
【作者单位】：湘潭电机股份有限公司特种电气事业部;海军工程大学舰船综合电力技术国防科技重点实验室;
【分类号】：TN322.8

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