1700V RC-IGBT的设计与仿真分析

发布时间：2018-06-26 02:04

本文选题：绝缘栅双极晶体管 + 逆向导通　；参考：《电子科技大学》2017年硕士论文

【摘要】：IGBT是当前最主流的功率器件之一。为了降低制造和封装成本,人们提出了将IGBT和与其反并联的续流二极管集成在一起,成为逆导型IGBT(RC-IGBT)。RC-IGBT最大的特点是同时具有正向和反向导通能力,而同时带来最大问题是在正向导通时会出现Snapback现象。如何抑制乃至消除Snapback现象是RC-IGBT研究的热点之一。本文对RC-IGBT的Snapback现象进行了研究,初步寻找了解决该现象的方法,并在此基础上提出了一种新型RC-IGBT的结构,并对其优缺点进行了仿真分析。本文内容主要由以下几部分构成:1.简要介绍了IGBT以及RC-IGBT的发展历史,RC-IGBT的优缺点以及设计上需要解决的问题,以及RC-IGBT中集成的P-i-N功率二极管的基本特性。2.分析了传统RC-IGBT的三种工作状态,以及在正向导通过程中Snapback现象出现的原理,并通过仿真分析得出减小元胞部分N-anode长度是最简单有效抑制Snapback现象的方法,但同时会使器件的反向导通特性变差的结论。随后又解释了RC-IGBT的耐压要高于相同参数下常规IGBT的原因。3.提出了一种新型RC-IGBT结构,其主要思想是利用反向导通时原本不通过电流的结终端部分的面积,将阳极区域的P-anode替换为N-anode,使得结终端部分也具有了反向导通的能力。新型RC-IGBT相比于传统RC-IGBT,其正向和反向导通特性的折中关系更为优化,而且并不需要额外的工艺步骤。4.指出了新型RC-IGBT存在的缺点,即它的电流会在靠近结终端的边缘元胞阴极区域过于集中,易导致寄生晶闸管的开启,使得器件在从反向导通状态向正向阻断状态切换的反向恢复发生失效。减小器件结终端部分N-anode长度可以使器件在更大电流下才会发生反向恢复失效并且带来的负面影响较小,是比较好的解决反向恢复失效问题的途径。
[Abstract]:IGBT is one of the most popular power devices. In order to reduce the cost of manufacturing and packaging, it is proposed to integrate IGBT with its reverse parallel current diode, which is the most important feature of inverse conduction IGBT (RC-IGBT). RC-IGBT has both forward and reverse conduction capability. At the same time, the biggest problem is the Snapback phenomenon in forward conduction. How to suppress and eliminate Snapback phenomenon is one of the hotspots in RC-IGBT research. In this paper, the Snapback phenomenon of RC-IGBT is studied, the method to solve this phenomenon is found, and a new structure of RC-IGBT is proposed, and its advantages and disadvantages are analyzed by simulation. This article mainly consists of the following parts: 1. This paper briefly introduces the development history of IGBT and RC-IGBT, the advantages and disadvantages of RC-IGBT and the problems to be solved in design, and the basic characteristics of P-i-N power diode integrated in RC-IGBT. In this paper, three working states of traditional RC-IGBT and the principle of Snapback phenomenon in forward conduction are analyzed. Through simulation analysis, it is concluded that reducing the N-Node length is the simplest and effective method to suppress Snapback phenomenon. But at the same time, it will make the reverse conduction characteristic of the device worse. The reason why RC-IGBT has higher voltage resistance than conventional IGBT with the same parameters is explained. In this paper, a new RC-IGBT structure is proposed. The main idea is to replace the P-Node in the anode region with N-anodeby the area of the junction terminal which was not passing through the current in reverse conduction, so that the junction terminal also has the ability of reverse conduction. Compared with the traditional RC-IGBT, the new RC-IGBT has a more optimized trade-off between forward and reverse conduction characteristics, and does not require additional process steps. 4. The shortcomings of the new RC-IGBT are pointed out, that is, the current of RC-IGBT will be too concentrated in the cathode area of the edge cell near the junction terminal, which will easily lead to the opening of parasitic thyristor. The reverse recovery of the device switching from the reverse on state to the forward blocking state is invalidated. Reducing the N-Node length of the junction can make the reverse recovery failure occur at higher current and bring less negative effect. It is a better way to solve the reverse recovery failure problem.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN322.8

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