高纯硅中杂质元素的质谱与非质谱分析方法综述

发布时间：2018-06-26 18:35

本文选题：高纯硅 + 金属杂质　；参考：《质谱学报》2016年01期

【摘要】：高纯硅广泛应用于光伏产业与电子信息产业,其中杂质的种类与含量是影响其性能的重要指标。根据杂质的不同属性,对高纯硅中杂质的质谱及非质谱分析测定方法进行了分类与综述,分析了各种方法的优缺点及应用现状。金属杂质元素的测定方法主要有辉光放电质谱法(GDMS)、电感耦合等离子体质谱法(ICP-MS)、二次离子质谱法(SIMS)等质谱分析方法,以及原子光谱法、中子活化分析法等非质谱分析方法;非金属杂质元素的测定方法主要有二次离子质谱法、气体提取-专用测定法等非质谱分析方法。对于高纯硅纯度分析,质谱和非质谱分析方法分别在金属杂质元素和非金属杂质元素的测定方面显示出优势。
[Abstract]:High purity silicon is widely used in photovoltaic industry and electronic information industry. According to the different properties of impurities, the mass spectrometry and non-mass spectrometry analysis methods of impurities in high-purity silicon are classified and summarized. The advantages and disadvantages of these methods and their application status are analyzed. The main methods for the determination of metal impurity elements are glow discharge mass spectrometry (GDMS), inductively coupled plasma mass spectrometry (ICP-MS), secondary ion mass spectrometry (Sims), and non-mass spectrometry, such as atomic spectroscopy and neutron activation analysis. The determination methods of nonmetallic impurity elements mainly include secondary ion mass spectrometry, gas extraction-specific determination and other non-mass spectrometry analysis methods. For the purity analysis of high purity silicon, mass spectrometry and non-mass spectrometry methods show advantages in the determination of metal impurity elements and nonmetallic impurity elements, respectively.
【作者单位】：中国原子能科学研究院;中国计量科学研究院;华润(集团)有限公司;
【基金】：国家科技支撑计划课题:无机纯物质纯度溯源研究与基标准研制(2013BAK12B02)资助
【分类号】：TN304.12;O657.63

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