大功率半导体激光器性能改善的研究

发布时间：2018-06-29 19:41

本文选题：激光器 + 大功率半导体激光器　；参考：《激光与光电子学进展》2017年07期

【摘要】：电流的侧向限制对半导体激光器具有重要意义,在半导体激光器有源区加入侧向限制结构一方面可以实现侧向限制,另一方面可以在一定范围内降低阈值电流密度。但是常规的侧向限制方法无论是侧向波导结构还是浅隔离槽结构都无法高效地抑制电流的侧向扩展。设计了新型的深隔离槽结构,利用Comsol软件仿真模拟侧向限制,发现深度超过外延层厚度的深隔离槽结构能更有效地提高电流的注入效率。在工艺中利用感应耦合等离子体刻蚀在距离脊型台两侧100μm的位置刻蚀深度为4μm的深隔离槽。实验结果表明,工作电流为5A时,腔长4mm具有深隔离槽结构的半导体激光器芯片输出功率为3.6 W,阈值电流为0.3 A,阈值电流密度为78.95A/cm2。结果表明新型深隔离槽结构可以有效抑制电流的侧向扩展。
[Abstract]:The lateral limitation of current is of great significance to semiconductor lasers. The lateral limiting structure can be added to the active region of semiconductor lasers to realize the lateral limitation on the one hand, and to reduce the threshold current density within a certain range on the other hand. However, the conventional lateral confinement method can not effectively suppress the lateral expansion of current, either in the lateral waveguide structure or in the shallow isolation slot structure. A new type of deep isolation cell structure is designed, and the lateral limitation is simulated by Comsol software. It is found that the deep isolation cell structure whose depth exceeds the thickness of the epitaxial layer can improve the injection efficiency of the current more effectively. Inductively coupled plasma was used to etch deep isolation cells with a depth of 4 渭 m at 100 渭 m from both sides of the ridge platform. The experimental results show that the output power, threshold current and threshold current density of semiconductor laser chip with cavity length 4mm with deep isolation slot structure are 3.6 W, 0.3 A and 78.95 A / cm ~ 2 when the working current is 5A. The results show that the new deep isolation groove structure can effectively suppress the lateral expansion of the current.
【作者单位】：北京工业大学光电子技术省部共建教育部重点实验室;
【基金】：国家自然科学基金(11204009) 北京市自然科学基金(4142005) 北京市教委创新能力提升计划(TJSHG201310005001)
【分类号】：TN248.4

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