GaN多量子阱悬空波导探测器的设计与表征

发布时间：2018-06-30 19:28

本文选题：悬空波导 + 多量子阱　；参考：《南京邮电大学》2017年硕士论文

【摘要】：光电探测器作为现代光通信系统中的关键器件,在推动社会信息化快速发展上发挥着至关重要的作用。尤其是光电探测器与不同结构波导的集成,进一步促进了探测器在不同领域的应用。具有高响应速率、高可靠性、制作工艺简单等优点的波导探测器,将是未来光通信器件的发展方向。本文对悬空波导结构以及探测器制备工艺进行了研究,成功实现了GaN多量子阱悬空波导探测器在Si衬底GaN基晶元上的单片集成。主要工作和成果如下:提出了一种GaN悬空结构波导,并使用FDTD数值分析法对波导的光耦合属性进行了仿真分析。GaN材料与空气的高折射率差,使悬空结构波导具有强光场限制功能。研究紫外光刻、深硅刻蚀和背后减薄刻蚀、电子束蒸镀等主要工艺,实现了p-n结GaN多量子阱悬空波导探测器的集成制备。采用深硅刻蚀和背后减薄刻蚀双面工艺实现了悬空结构波导。之后,使用光学显微镜、扫描电镜(SEM)和原子力显微镜(AFM)等设备对器件的结构、电极区域和薄膜表面粗糙度进行了测试和分析。搭建了GaN多量子阱悬空波导探测器主要特性参数测量系统。对器件主要特性参数进行了测量并对结果进行了分析。器件具有发光和探测双重模式。器件能达到的最高光谱响应度分别是在0 V偏压和435 nm入射光波长下大约为7.58 mAW-1,在3 V偏压和401 nm入射光波长下大约为140 mAW-1。此外,器件的金属电极可用作反光镜将部分入射光返回再吸收,进一步提高器件光电流响应。
[Abstract]:As a key device in modern optical communication system, photodetector plays an important role in promoting the rapid development of social informatization. Especially, the integration of photodetectors with different waveguides promotes the application of detectors in different fields. Waveguide detectors with high response rate, high reliability and simple fabrication process will be the development direction of optical communication devices in the future. In this paper, the structure of suspended waveguide and the fabrication process of the detector are studied, and the monolithic integration of gan multi-quantum well suspended waveguide detector on gan crystal on Si substrate is successfully realized. The main work and results are as follows: a kind of gan suspended waveguide is proposed, and the optical coupling properties of the waveguide are simulated by FDTD method. The difference of high refractive index between gan material and air is analyzed. The suspended waveguide has the function of limiting the strong light field. The integrated fabrication of p-n junction gan multi-quantum well suspended waveguide detectors has been achieved by studying the main processes such as UV lithography deep silicon etching and back thinning and electron beam evaporation. The suspended waveguide is realized by deep silicon etching and back thinning etching. The structure, electrode area and surface roughness of the film were measured and analyzed by means of optical microscope, scanning electron microscope (SEM) and atomic force microscope (AFM). The measurement system of main characteristic parameters of gan multi-quantum well suspended waveguide detector is built. The main characteristic parameters of the device are measured and the results are analyzed. The device has the dual mode of luminescence and detection. The maximum spectral responsivity of the device is about 7.58 mAW-1 at 0 V bias and 435 nm incident wavelength, and 140 mAW-1 at 3 V bias and 401 nm incident wavelength, respectively. In addition, the metal electrode of the device can be used as a reflector to return part of the incident light back to reabsorption and further improve the photocurrent response of the device.
【学位授予单位】：南京邮电大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN36

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