驱动回路参数对碳化硅MOSFET开关瞬态过程的影响

发布时间：2018-07-01 13:08

本文选题：碳化硅MOSFET + 脉冲　；参考：《电工技术学报》2017年13期

【摘要】：在电力电子系统中,碳化硅(Si C)MOSFET的开关特性易受系统杂散参数的影响,表现为电磁能量脉冲形态属性的非理想特性,并进一步影响系统效率和可靠性。针对Si C MOSFET,首先分析控制脉冲、驱动脉冲及电磁能量脉冲三者间形态属性的关系,提取影响Si C MOSFET开关瞬态过程的关键参数,即开关过程中的dv/dt和di/dt。基于Si C MOSFET的开关过程,分析驱动回路参数对dv/dt和di/dt的影响,并通过PSpice仿真及搭建Si C MOSFET双脉冲测试实验平台进行分析和比较。在此基础上,对基于驱动回路参数的瞬态控制方法进行对比分析,为实际应用中对Si C MOSFET的开关特性改善提供重要的理论基础。
[Abstract]:In power electronic systems, the switching characteristics of silicon carbide (sic) MOSFET are easily affected by the stray parameters of the system, which are characterized by the non-ideal properties of electromagnetic energy pulse morphology, and further affect the efficiency and reliability of the system. Aiming at sic MOSFET, the relationship among the morphological properties of control pulse, driving pulse and electromagnetic energy pulse is analyzed firstly, and the key parameters that affect the transient process of switch, namely dv/dt and di-dt, are extracted. Based on the switching process of sic MOSFET, the influence of driving circuit parameters on dv/dt and di/dt is analyzed. On this basis, the transient control methods based on driving loop parameters are compared and analyzed, which provides an important theoretical basis for the improvement of switching characteristics of sic MOSFET in practical application.
【作者单位】：清华大学电机系电力系统及发电设备安全控制和仿真国家重点实验室;
【基金】：国家自然科学基金重大项目资助(51490680,51490683)
【分类号】：TN386

【相似文献】