图形化蓝宝石衬底形貌对GaN基LED出光性能的影响

发布时间：2018-07-07 16:02

本文选题：图形化蓝宝石衬底(PSS) + 衬底形貌　；参考：《半导体技术》2017年05期

【摘要】：近年来,图形化蓝宝石衬底(PSS)作为GaN基LED外延衬底材料被广泛应用。通过干法刻蚀和湿法腐蚀制备了不同规格和形状的蓝宝石衬底图形,并进行外延生长、芯片制备和封装验证,采用扫描电子显微镜(SEM)和3D轮廓仪进行形貌表征,研究了不同规格和形状的衬底图形对LED芯片出光性能影响,并与外购锥形衬底(PSSZ2)进行对比。结果表明,在20 m A工作电流下,PSSZ2的LED光通量为8.33 lm。采用类三角锥和盾形衬底的LED光通量分别为7.83 lm和7.67 lm,分别比PSSZ2衬底低6.00%和7.92%。对锥形形貌进行优化,采用高1.69μm、直径2.62μm、间距0.42μm的锥形衬底(PSSZ3)的LED光通量为8.67 lm,比PSSZ2衬底高4.08%,优化的PSSZ3能有效地提高LED出光性能。
[Abstract]:In recent years, graphic sapphire substrate (PSS) has been widely used as GaN-based LED epitaxial substrate. The sapphire substrate shapes of different sizes and shapes were prepared by dry etching and wet etching. The sapphire substrate was epitaxially grown, chip fabricated and packaged verified. The morphology was characterized by scanning electron microscopy (SEM) and 3D profilometer. The influence of substrate shapes of different sizes and shapes on the output performance of LED chips was studied and compared with that of external tapered substrates (PSSZ2). The results show that the luminous flux of PSSZ2 is 8.33 lm at 20 Ma operating current. The luminous flux of LED on triangular cone and shield substrate is 7.83 lm and 7.67 lm respectively, which is 6.00% and 7.92% lower than that of PSSZ2 substrate, respectively. The shape of the cone is optimized. The luminous flux of the LED on the tapered substrate (PSSZ3) with a diameter of 2.62 渭 m and a distance of 0.42 渭 m is 8.67 lm, which is 4.08 higher than that of the PSSZ2 substrate. The optimized PSSZ3 can effectively improve the light output of the LED.
【作者单位】：同辉电子科技股份有限公司;
【基金】：电子信息产业发展基金资助项目(工信部财[2013]472号)
【分类号】：TN312.8

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