盒栅式电子倍增器模拟计算

发布时间：2018-07-07 23:50

本文选题：盒栅式电子倍增器 + 电子轨迹　；参考：《真空科学与技术学报》2017年04期

【摘要】：采用三维电磁分析软件CST对盒栅式电子倍增器结构进行建模,利用控制变量的分析方法修改模型参数,模拟计算了不同打拿极栅网结构参数和出射电子能量条件下电子倍增器内部的电场分布、电子运动轨迹以及倍增器增益。研究分析了打拿极栅网结构参数和出射电子能量对电子倍增器特性的影响。数值模拟结果表明,倍增器打拿极栅网密度过密或者过疏均会降低电子倍增器的增益,在打拿极栅网间距为0.9 mm时电子倍增器增益最高;较小的二次电子出射能量有利于改善倍增器内电子轨迹的发散并提高倍增器增益。
[Abstract]:The three-dimensional electromagnetic analysis software CST is used to model the box gate electron multiplier structure, and the control variable analysis method is used to modify the model parameters. The electric field distribution, electron motion trajectory and multiplier gain of the electron multiplier are simulated and calculated under the conditions of different structure parameters of the grid and the energy of the outgoing electron. The distribution of the electric field, the trajectory of the electron motion and the gain of the multiplier are calculated. The effects of the structure parameters and the energy of the outgoing electron on the characteristics of the electron multiplier are analyzed. The numerical simulation results show that the density of the grid is too dense or too sparse to reduce the gain of the electron multiplier, and the gain of the multiplier is the highest when the spacing of the grid is 0.9 mm. The smaller secondary electron emission energy can improve the divergence of electron trajectories and increase the gain of the multiplier.
【作者单位】：西安交通大学电子物理与器件教育部重点实验室;中国科学院西安光学精密仪器研究所;
【基金】：国家自然科学基金项目(51271140,61275023)
【分类号】：TN103

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