X波段12W GaAs功率放大器MMIC

发布时间：2018-07-08 09:29

  本文选题：微波单片集成电路(MMIC) + X波段　； 参考：《半导体技术》2016年05期

【摘要】：基于0.25μm Ga As赝配高电子迁移率晶体管(PHEMT)工艺研制了一款可工作在脉冲和连续波条件下的X波段高性能大功率放大器(HPA)。根据Ga As材料的导热特性和热分布特点,设计了能够在连续波条件下工作的功率器件,并提取了器件的EEHEMT可定标模型参数。HPA原理图设计采用低损耗高效率母线拓扑结构,并基于最优效率原则优化了HPA各级阻抗匹配参数。对HPA容易出现的几种稳定性问题进行了分析,并在设计过程中采取了相应的防范措施。采用电磁场仿真技术优化设计的HPA芯片尺寸为3.5 mm×4.0 mm。在栅源电压为-0.7 V,漏源电压为8 V,工作频率为9~10 GHz的条件下,连续波输出功率达到12 W以上,功率附加效率大于45%,在9.6 GHz时功率附加效率达到50%。
[Abstract]:Based on 0.25 渭 m GaAs pseudo-electron mobility transistor (pHEMT) process, an X-band high power amplifier (HPA) operating under pulse and continuous wave conditions has been developed. According to the characteristics of thermal conductivity and thermal distribution of GaAs materials, a power device which can work under continuous wave condition is designed. The EEHEMT scalable model parameters. HPA schematic diagram is designed with low loss and high efficiency bus topology. Based on the principle of optimal efficiency, the impedance matching parameters of HPA are optimized. Several stability problems of HPA are analyzed, and the corresponding preventive measures are taken in the design process. The size of HPA chip is 3.5 mm 脳 4.0 mm. When the gate source voltage is -0.7 V, the drain source voltage is 8 V and the operating frequency is 9 ~ 10 GHz, the output power of the continuous wave is more than 12 W, the additional power efficiency is more than 450.The additional efficiency of power is 50 at 9.6 GHz.
【作者单位】： 中国电子科技集团公司第十三研究所;
【分类号】：TN722.75
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本文编号：2106985