面向可见光通信的氮化镓量子阱光波导集成研究

发布时间：2018-07-12 17:53

本文选题：光子集成 + 波导　；参考：《南京邮电大学》2017年硕士论文

【摘要】：在现代光通信领域,基于空间传输的可见光通信技术发展迅猛,已经开始改变人们的生活习惯,而面向可见光通信的平面光子集成器件凭借其尺寸小、功耗低、高稳定性和高响应速度等优点,成为了业界研究人员的关注热点,具有巨大的价值和广阔的应用前景。III-V族的氮化物作为第三代半导体材料,在可见光波长范围内具有优良的光电特性,适用于制备各种光源器件及有源光子集成器件,为制备面向可见光平面通信的集成光子器件奠定了良好的材料基础。双工通信是应用于可见光平面通信的集成光子器件中最基本的功能模块,将光源,波导,探测器集成在同一块晶片上,实现双工通信。研究片上双工通信,是研制面向可见光平面通信集成光子器件的重要前提和基础。本文基于氮化镓多量子阱材料,对悬空氮化镓光波导、平面集成光子通信器件进行了设计制备,理论模拟,主要研究了一种面向可见光通信的平面光子集成器件,并进行了电学、光学、系统测试分析等多方面工作。主要工作包括:采用时域有限差分(FDTD)方法以及有限元方法(FEM),分别借助于RSoft软件中的Fullwave模块和FemSIM模块,对工作在可见光波段的悬空氮化镓矩形波导进行了传输特性理论分析和模式分析。提出并设计了基于氮化镓材料的平面光子集成器件,采用氮化物ICP刻蚀技术、深硅刻蚀技术以及背后减薄等技术,在2英寸的硅衬底GaN/In GaN晶片上制备了集成器件,实现了光源,波导和探测器的单片集成。并利用扫描电子显微镜(SEM)、原子力显微镜(AFM)和光学电子显微镜对器件进行了结构测试和形貌分析。针对氮化镓平面光子集成器件,设计了一套综合的光学及电学测试系统用于测试其性能,主要采用半导体参数仪系统分析了LED的电学性能,并且验证了悬空In GaN/GaN量子阱器件的光电探测功能。另外,采用数字示波器分析了集成器件的双工通信性能,并且验证了器件抗同频干扰的能力,为实现具有复杂功能的单片光子集成器件奠定了基础。
[Abstract]:In the field of modern optical communication, the visible light communication technology based on space transmission has developed rapidly, and has begun to change people's living habits. The planar photonic integrated devices for visible light communication have small size and low power consumption. The advantages of high stability and high response speed have become the focus of attention of researchers in the industry, and have great value and broad application prospects. The nitride of the III-V family is used as the third generation semiconductor material. It has excellent optoelectronic properties in the range of visible wavelength, and is suitable for the fabrication of various light source devices and active photonic integrated devices, which lays a good material foundation for the fabrication of integrated photonic devices for visible light plane communication. Duplex communication is the most basic function module of integrated photonic devices used in visible light plane communication. The light source, waveguide and detector are integrated on the same chip to realize duplex communication. The study of on-chip duplex communication is an important prerequisite and foundation for the development of optical planar communication integrated photonic devices. In this paper, based on gallium nitride multiple quantum well materials, the suspended gallium nitride optical waveguide and planar integrated photonic communication devices are designed and fabricated. A planar photonic integrated device for visible light communication is studied. And carried out electrical, optical, system testing and analysis and other aspects of work. The main work includes: using finite difference time domain (FDTD) method and finite element method (FEM), using Fullwave module and FemSIM module in RSoft software, respectively. The propagation characteristics and mode analysis of suspended gallium nitride rectangular waveguide operating in visible light band are analyzed theoretically and in mode. A planar photonic integrated device based on gallium nitride is proposed and designed. The integrated device is fabricated on 2 inch Si substrate gan / in gan wafer using ICP etching technology, deep silicon etching technology and back thinning technology, and the light source is realized. Monolithic integration of waveguide and detector. Scanning electron microscope (SEM), atomic force microscope (AFM) and optical electron microscope (OEM) were used to analyze the structure and morphology of the device. A comprehensive optical and electrical testing system is designed to test the performance of gallium nitride planar photonic integrated devices. The semiconductor parameter meter is used to analyze the electrical properties of LED. The photoelectric detection function of suspended in gan / gan quantum well devices is verified. In addition, the digital oscilloscope is used to analyze the duplex communication performance of the integrated devices, and the ability of the devices to resist co-frequency interference is verified, which lays a foundation for the realization of monolithic photonic integrated devices with complex functions.
【学位授予单位】：南京邮电大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN252;TN929.1

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