大功率射频LDMOS器件设计优化与建模
发布时间：2018-07-13 11:57
【摘要】：LDMOS(Lateral Double Diffused Metal Oxide Semiconductor)器件以其各方面的优势已经基本取代双极型器件成为射频领域的主流技术,由于RF LDMOS器件巨大的市场前景和重要的军用价值,成为了半导体行业研究的热点,我国也已展开了对硅基RF LDMOS器件的研发工作。本设计的目标是获得一款大功率RF LDMOS器件,该器件采用双层源极场板和背面源结构,利用半导体仿真软件优化设计器件结构和各区域杂质注入剂量,使器件具有较好的直流特性和频率特性,然后根据器件具体结构绘制器件版图,并在上海华虹宏力半导体制造有限公司完成器件的制造。对小栅宽器件的直流测试结果表明,器件击穿电压大于100V,饱和电流密度大于180μA/μm,阈值电压约为2.2V,对大栅宽封装器件的测试结果表明,在频率为1090MHz、漏源电压为50V的测试条件下,器件最大输出功率达到500W,效率达到45%,增益达到18dB,达到了设计指标的要求。本论文还尝试性地对器件进行了小信号建模,提取了器件小信号等效电路中的寄生参数和本征参数,并在ADS中进行了优化,基本完成了器件小信号模型的建立。探讨了大信号建模的意义和基本思想,介绍了一种大信号建模方法。
[Abstract]:LDMOS (Lateral diffused Metal oxide Semiconductor) devices have basically replaced bipolar devices as the mainstream technology in RF field with its advantages in various aspects. Because of the huge market prospect and important military value of RF LDMOS devices, LDMOS devices have become a hot research topic in semiconductor industry. Research and development of silicon-based RF LDMOS devices have also been carried out in China. The purpose of this design is to obtain a high power RF LDMOS device. The device uses double-layer source polar field plate and backside source structure, and the semiconductor simulation software is used to optimize the design of device structure and impurity injection dose in each region. The device has better DC and frequency characteristics. Then the layout of the device is drawn according to the specific structure of the device, and the fabrication of the device is completed in Shanghai Huahong Hongli Semiconductor Manufacturing Co., Ltd. The DC test results of small gate width devices show that the breakdown voltage is more than 100 V, the saturation current density is more than 180 渭 A / 渭 m, and the threshold voltage is about 2.2 V. the test results for the large gate width packaging devices show that under the condition of 1090 MHz frequency and 50 V drain voltage, the breakdown voltage is more than 100 V, the saturation current density is more than 180 渭 A / 渭 m, and the threshold voltage is about 2.2 V. The maximum output power of the device is 500 W, the efficiency is 45 and the gain is 18 dB. The parasitic and intrinsic parameters of the small signal equivalent circuit are extracted and optimized in ads, and the small signal model of the device is established. The significance and basic idea of large signal modeling are discussed, and a large signal modeling method is introduced.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN386.1
本文编号：2119293
[Abstract]:LDMOS (Lateral diffused Metal oxide Semiconductor) devices have basically replaced bipolar devices as the mainstream technology in RF field with its advantages in various aspects. Because of the huge market prospect and important military value of RF LDMOS devices, LDMOS devices have become a hot research topic in semiconductor industry. Research and development of silicon-based RF LDMOS devices have also been carried out in China. The purpose of this design is to obtain a high power RF LDMOS device. The device uses double-layer source polar field plate and backside source structure, and the semiconductor simulation software is used to optimize the design of device structure and impurity injection dose in each region. The device has better DC and frequency characteristics. Then the layout of the device is drawn according to the specific structure of the device, and the fabrication of the device is completed in Shanghai Huahong Hongli Semiconductor Manufacturing Co., Ltd. The DC test results of small gate width devices show that the breakdown voltage is more than 100 V, the saturation current density is more than 180 渭 A / 渭 m, and the threshold voltage is about 2.2 V. the test results for the large gate width packaging devices show that under the condition of 1090 MHz frequency and 50 V drain voltage, the breakdown voltage is more than 100 V, the saturation current density is more than 180 渭 A / 渭 m, and the threshold voltage is about 2.2 V. The maximum output power of the device is 500 W, the efficiency is 45 and the gain is 18 dB. The parasitic and intrinsic parameters of the small signal equivalent circuit are extracted and optimized in ads, and the small signal model of the device is established. The significance and basic idea of large signal modeling are discussed, and a large signal modeling method is introduced.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN386.1
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