大功率激光器热特性研究与热阻仪研制
发布时间：2018-07-13 14:14
【摘要】：半导体激光器在光电子领域中意义重大,应用范围十分广泛其中包括激光打印机、光传感、光通信等。半导体激光器在近年来发展越来越迅速,其工作功率也越来越大,此外,半导体激光器作为一种高效能源应用范围也扩展到医疗、军事等领域。半导体激光器的封装结构是决定器件温升与热阻重要的因素,温升与热阻又直接决定了半导体器件的光转化效率和激光器的光谱,随着激光器的功率变大趋势加强,散热必将会成为一个重要的瓶颈,所以优化封装结构已经十分必要,对于今后半导体激光器的发展有重要意义。本文利用PN结结电压随温度的变化关系,实现对大功率激光器巴条的热阻测量,并且通过工程的方法仪器化热阻测量,结合结构函数方法,能够清晰的分辨出激光器巴条热量传递路径上的各层结构热阻,并将测量结果与红外热成像结果进行比较验证,该方法可以实现对大功率激光器热阻的测量。用电学法对半导体激光器热特性方面进行了研究,本文主要包括以下几项工作:自主研发了大功率激光器热阻仪,主要包括逻辑设计部分和功能电路设计与机箱设计部分。其逻辑设计部分是基于FPGA,用异步串口通信协议实现的,其模块主要包括串口接收模块、串口发送模块、波特率发生模块、控制模块,最终将串行的数据转换为并行可执行的命令,来完成与PC机的通信,实现热阻仪电路部分的电流控制与开关控制,并且实时采集被测器件的电压与电流反馈到PC机,以实现实时监测的目的;其功能电路部分的电路设计主要包括工作电流电路的设计、测试电流电路的设计、开关电路的设计、采集放大电路的设计。FPGA将PC机发送的串行数字信号转化为数模转换器可识别的信号,数模转化器输出恒定的电压信号,通过工作电流电路和测试电流电路实现恒定电流输出,用开关电路对电流进行开启以控制被测器件的加热时间,当被测器件温度上升到稳态时关断大功率的工作电流,切换到不影响温升的小电流,然后利用采集放大电路将采集到的电压信号传递到电脑进行后期的处理;其机箱设计部分主要包括散热设计和装箱。基于测量光功率的方法,通过电学法测量出激光器未发光时的热阻和其发光时的热阻。利用热阻原理将热阻值转化为温升,通过温升的变换计算出器件的光功率,通过光功率与总功率计算出光转化效率。最后利用红外法对实验进行了验证,通过红外测试仪在测量热阻的同时测量器件的温升,并且通过大功率半导体激光器测试仪对其光转化效率进行验证。本文的研究成果有利于提高我国商业化半导体激光器器件热阻测试设备的技术指标与水平,在半导体激光器的热阻测试领域具有重要的理论意义和应用价值。
[Abstract]:Semiconductor lasers are of great significance in the field of optoelectronics. They are widely used in laser printers, optical sensing, optical communication and so on. Semiconductor lasers have been developing more and more rapidly in recent years, and their working power is also increasing. In addition, semiconductor lasers as a kind of high efficiency energy have been applied in medical, military and other fields. The packaging structure of semiconductor laser is an important factor to determine the temperature rise and thermal resistance of the device. Temperature rise and thermal resistance directly determine the optical conversion efficiency of semiconductor device and the spectrum of the laser. Heat dissipation will become an important bottleneck, so it is necessary to optimize the packaging structure, which is of great significance for the development of semiconductor lasers in the future. In this paper, the thermal resistance measurement of high power laser bar is realized by using the change of PN junction voltage with temperature, and the thermal resistance measurement is instrumented by engineering method, combined with the structural function method. The thermal resistance of each layer in the laser bar heat transfer path can be clearly identified and compared with the infrared thermal imaging results. This method can be used to measure the thermal resistance of high power laser. The thermal characteristics of semiconductor lasers are studied by electrical method. The main work of this paper is as follows: a high power laser thermal resistive instrument is developed, which includes logic design, functional circuit design and chassis design. Its logic design part is based on FPGA, which is realized by asynchronous serial communication protocol. The module mainly includes serial port receiving module, serial port sending module, baud rate generating module, control module, etc. Finally, the serial data is converted into a parallel executable command to complete the communication with the PC, to realize the current control and switch control of the circuit of the thermal resistive meter, and to collect the voltage and current of the measured device to the PC in real time. In order to realize the purpose of real-time monitoring, the circuit design of the functional circuit mainly includes the design of the working current circuit, the design of the test current circuit, the design of the switch circuit, The design of acquisition and amplification circuit. FPGA converts the serial digital signal sent by PC into a recognizable signal of digital-to-analog converter. The digital-analog converter outputs a constant voltage signal, and realizes the constant current output by working current circuit and testing current circuit. The current is turned on with the switch circuit to control the heating time of the device under test. When the temperature of the measured device rises to a steady state, the high power working current is turned off, and the current is switched off to a small current that does not affect the temperature rise. Then the collected voltage signal is transmitted to the computer for later processing by using the acquisition and amplification circuit. The design part of the chassis mainly includes the design of heat dissipation and packing. Based on the method of measuring optical power, the thermal resistance of the laser without luminescence and the thermal resistance of its luminescence are measured by electrical method. The thermal resistance is converted into temperature rise by the principle of thermal resistance, the optical power of the device is calculated by the transformation of the temperature rise, and the optical conversion efficiency is calculated by the optical power and the total power. Finally, the experiment is verified by infrared method. The temperature rise of the device is measured by the infrared tester, and the optical conversion efficiency is verified by the high-power semiconductor laser tester. The research results in this paper are helpful to improve the technical index and level of thermal resistance testing equipment for commercial semiconductor laser devices in China, and have important theoretical significance and application value in the field of thermal resistance measurement of semiconductor lasers.
【学位授予单位】：北京工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN248
本文编号：2119653
[Abstract]:Semiconductor lasers are of great significance in the field of optoelectronics. They are widely used in laser printers, optical sensing, optical communication and so on. Semiconductor lasers have been developing more and more rapidly in recent years, and their working power is also increasing. In addition, semiconductor lasers as a kind of high efficiency energy have been applied in medical, military and other fields. The packaging structure of semiconductor laser is an important factor to determine the temperature rise and thermal resistance of the device. Temperature rise and thermal resistance directly determine the optical conversion efficiency of semiconductor device and the spectrum of the laser. Heat dissipation will become an important bottleneck, so it is necessary to optimize the packaging structure, which is of great significance for the development of semiconductor lasers in the future. In this paper, the thermal resistance measurement of high power laser bar is realized by using the change of PN junction voltage with temperature, and the thermal resistance measurement is instrumented by engineering method, combined with the structural function method. The thermal resistance of each layer in the laser bar heat transfer path can be clearly identified and compared with the infrared thermal imaging results. This method can be used to measure the thermal resistance of high power laser. The thermal characteristics of semiconductor lasers are studied by electrical method. The main work of this paper is as follows: a high power laser thermal resistive instrument is developed, which includes logic design, functional circuit design and chassis design. Its logic design part is based on FPGA, which is realized by asynchronous serial communication protocol. The module mainly includes serial port receiving module, serial port sending module, baud rate generating module, control module, etc. Finally, the serial data is converted into a parallel executable command to complete the communication with the PC, to realize the current control and switch control of the circuit of the thermal resistive meter, and to collect the voltage and current of the measured device to the PC in real time. In order to realize the purpose of real-time monitoring, the circuit design of the functional circuit mainly includes the design of the working current circuit, the design of the test current circuit, the design of the switch circuit, The design of acquisition and amplification circuit. FPGA converts the serial digital signal sent by PC into a recognizable signal of digital-to-analog converter. The digital-analog converter outputs a constant voltage signal, and realizes the constant current output by working current circuit and testing current circuit. The current is turned on with the switch circuit to control the heating time of the device under test. When the temperature of the measured device rises to a steady state, the high power working current is turned off, and the current is switched off to a small current that does not affect the temperature rise. Then the collected voltage signal is transmitted to the computer for later processing by using the acquisition and amplification circuit. The design part of the chassis mainly includes the design of heat dissipation and packing. Based on the method of measuring optical power, the thermal resistance of the laser without luminescence and the thermal resistance of its luminescence are measured by electrical method. The thermal resistance is converted into temperature rise by the principle of thermal resistance, the optical power of the device is calculated by the transformation of the temperature rise, and the optical conversion efficiency is calculated by the optical power and the total power. Finally, the experiment is verified by infrared method. The temperature rise of the device is measured by the infrared tester, and the optical conversion efficiency is verified by the high-power semiconductor laser tester. The research results in this paper are helpful to improve the technical index and level of thermal resistance testing equipment for commercial semiconductor laser devices in China, and have important theoretical significance and application value in the field of thermal resistance measurement of semiconductor lasers.
【学位授予单位】：北京工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN248
【参考文献】
相关期刊论文 前1条
1 王文;褚金雷;高欣;张晶;乔忠良;薄报学;;基于多芯片封装的半导体激光器热特性[J];强激光与粒子束;2014年01期
，本文编号：2119653
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