一种低功耗抗辐射加固触发器的设计

发布时间：2018-07-14 13:42

【摘要】：随着航天事业的发展,集成电路越来越多的应用在航天器之中。航天器处于辐射环境下工作,容易受到辐射粒子的撞击产生诸多的辐射效应,因此高可靠性的电路对航天器尤为重要。集成电路的制造工艺迅猛发展,晶体管特征尺寸不断变小,使得单粒子效应发生的概率变大。为保证集成电路可以正常工作,对存储电路尤其是触发器进行抗辐射加固是必要的。本文在对现有的电路级抗辐射加固的分析之后,选择一种高可靠、低开销的的SETTOFF(Soft Error and Timing error Tolerant Flip-Flop)结构抗辐射加固D触发器作为研究对象。对该电路进行了结构上的详细分析,并在SMIC65nm的工艺下进行电路仿真和进一步的分析。针对SETTOFF结构中翻转检测器面积开销大的缺点,进行了改进。对改进后的电路SETTOFF-M(Soft Error and Timing error TOlerant Flip-Flop Modified)结构,在相同的仿真环境下进行电路仿真,并将仿真结果与改进前进行了对比。SETTOFF-M结构面积和功耗开销更小,纠错速度更快。在分析了几种常用版图级抗辐射加固方法的基础上,选择其中开销小且抗辐射性能好的阱电极加固方法和电荷收集增强加固方法对改进前后的电路进行版图级加固。了解绘制版图的基本流程,以及标准单元版图绘制规则,按照标准单元规格绘制SETTOFF结构和SETTOFF-M结构的电路版图。对版图加固所使用的电荷收集增强技术,进行了TCAD仿真和分析,版图设计中使用此加固方法是有效的。掌握标准单元的建库流程。在已完成工作的基础上,进行物理信息和时序逻辑信息的提取,并对生成的物理信息文件和逻辑信息文件进行验证,完成了SETTOFF结构和SETTOFF-M结构标准库单元的建立。
[Abstract]:With the development of aerospace industry, integrated circuits are more and more used in spacecraft. Spacecraft in the radiation environment is vulnerable to the impact of radiation particles to produce a lot of radiation effects, so the high reliability of the circuit is particularly important for spacecraft. With the rapid development of integrated circuit manufacturing technology, the characteristic size of transistor becomes smaller, which makes the probability of single particle effect increase. In order to ensure that the integrated circuit can work properly, it is necessary to strengthen the radiation resistance of the memory circuit, especially the flip-flop. In this paper, after analyzing the existing circuit level anti-radiation reinforcement, we choose a kind of D flip-flop (soft error and timing error Tolerant Flip-Flop) structure with high reliability and low cost as the research object. The structure of the circuit is analyzed in detail, and the circuit simulation and further analysis are carried out under the technology of SMIC 65nm. Aiming at the disadvantage of overturning detector area overhead in SETTOFF structure, the improvement is made. The improved set TOFF-M (soft error and timing error TOlerant Flip-Flop modified) structure is simulated in the same simulation environment. Based on the analysis of several common methods of anti-radiation reinforcement of layout level, the well electrode reinforcement method and the charge collection strengthening method are selected to reinforce the circuit before and after the improvement. Understand the basic process of drawing layout and the rules of drawing standard cell layout, draw the circuit layout of SETTOFF structure and SETTOFF-M structure according to the standard unit specification. TCAD simulation and analysis of the charge collection enhancement technique used in layout strengthening are carried out. It is effective to use this method in layout design. Master the process of building standard unit. On the basis of the completed work, the physical information and temporal logic information are extracted, and the generated physical information files and logical information files are verified. The set off structure and the set TOFF-M structure standard library unit are established.
【学位授予单位】：哈尔滨工业大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN702

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