界面调控对有机光电探测器性能改善研究
发布时间：2018-07-21 19:04
【摘要】：有机光电探测器(OPD,Organic photodetector)作为一类重要的光电器件,由于它具有优秀的机械灵活性,生产成本较低,材料选择多样广泛等优势已经吸引了很多研究学者的关注和研究,其中研究较多的有对OPD的电荷传输特性、界面调控对器件性能的提高。为了提高OPD的性能,除了要选择好高吸收率、高载流子迁移率的给受体材料,还需要保证载流子在传输中具有低的能量势垒。当给受体材料界面出现能带弯曲,形成了界面偶极子时,对有机材料之间的能量势垒也有很大影响。OPD器件关注暗电流、光暗电流比等参数,OPD器件的暗电流越小越好,光暗电流比越大越好。为了减小OPD器件的暗电流,可以通过d{杂的方法来提高器件中薄膜的电阻率,从而减少器件的暗电流,提高器件的光暗电流比。本论文的主要内容包括两大部分,具体如下:第一部分研究了掺杂调控ZnO纳米棒/PVK界面提高紫外光电探测器的性能。通过在ZnO中d{杂不同浓度的Al制备成AZO薄膜,运用XRD、PL等表征手段对不同Al浓度的AZO薄膜进行表征,得出增加Al的浓度使薄膜的结晶质量变差,使薄膜的电阻增加。然后制备出了有机无机复合的ZnO/PVK基紫外探测器,其中ZnO纳米颗粒采用溶胶-凝胶法制备,ZnO纳米棒阵列采用水热法制备。把不同Al浓度的AZO薄膜应用于ZnO/PVK基紫外探测器中,减少了器件的暗电流,从而提高器件的光暗电流比,提高器件的性能,并通过测试器件的吸收光谱、J-V曲线、EQE光谱研究其对器件性能的改善。当d{杂Al浓度为10at%时,在-5V偏压下和365nm、2mW/cm2的紫外光光照下ZnO/PVK基紫外探测器的光暗电流比达到了103量级,器件的暗电流密度达到了17.2μA/cm2,响应度达到了9.25A/W。第二部分研究了多层DCJTB/C60界面对有机近红外探测器性能的影响。利用真空蒸镀的方法制备器件,通过改变DCJTB/C60的层数来优化探测器的性能,器件在拥有3层DCJTB/C60薄膜时拥有较好的性能,在-1V偏压下980nm近红外激光器照射下,器件的光电流密度达到0.18A/cm2。利用UPS、XPS等表征手段研究发现在DCJTB/C60界面层发生了能带弯曲,形成了界面偶极子,并研究了多层DCJTB/C60的有机近红外探测器的工作机制。
[Abstract]:OPD (Organic photodetector), as an important type of photoelectric device, has attracted many researchers' attention and research because of its excellent mechanical flexibility, low production cost and wide selection of material, which has a lot of research on the charge transmission characteristics of OPD and interface control to the device. In order to improve performance, in order to improve the performance of OPD, in addition to the choice of high absorptivity and high carrier mobility to the receptor material, it is necessary to ensure that the carrier has a low energy barrier in the transmission. When the interface of the receptor appears to bend and forms the interface dipole, it also has a great influence on the energy barrier between the organic materials. OPD devices focus on dark current, light dark current ratio and other parameters. The smaller the dark current is, the better the dark current, the better the dark current ratio. In order to reduce the dark current of the OPD device, the resistivity of the thin film in the device can be improved by the d{hybrid method, thus reducing the dark current of the device and raising the light dark current ratio of the devices. The main contents of this paper are the main contents of this paper. The two major parts are as follows: in the first part, the properties of UV photodetectors are improved by doping control ZnO nanorods /PVK interface. AZO thin films are prepared by Al with different concentrations of d{in ZnO. The AZO thin films with different Al concentrations are characterized by XRD, PL and so on. It is concluded that increasing Al concentration makes the crystalline quality of the thin film worse. The resistance of the film is increased. Then the ZnO/PVK based UV detector of organic and inorganic composite is prepared, in which the ZnO nanoparticles are prepared by the sol-gel method and the ZnO nanorod array is prepared by hydrothermal method. The AZO thin films with different Al concentrations are applied to the ZnO/PVK based UV detector to reduce the dark current of the device and thus improve the device. Light dark current ratio, improve the performance of the device, and through the absorption spectrum of the test device, J-V curve, EQE spectrum to study the improvement of the device performance. When the d{Al concentration is 10at%, under -5V bias and 365nm, 2mW/cm2's ultraviolet light ultraviolet detector, the light dark current ratio of the ZnO/PVK based ultraviolet detector reaches 103, the dark current density of the device reaches The response degree is 17.2 A/cm2, and the response degree is 9.25A/W. second. The effect of multilayer DCJTB/C60 interface on the performance of organic near infrared detector is studied. The device is prepared by vacuum evaporation. The performance of the detector is optimized by changing the number of DCJTB/C60 layers. The device has better performance when it has 3 layers of DCJTB/C60 film, and the -1V bias voltage is applied to the device. Under the irradiation of the lower 980nm near infrared laser, the photocurrent density of the device reaches 0.18A/cm2. by means of UPS, XPS and other characterization methods. It is found that the band bending in the DCJTB/C60 interface is formed, and the interface dipole is formed, and the working mechanism of the organic near infrared detector of multi-layer DCJTB/C60 is studied.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN15
本文编号：2136531
[Abstract]:OPD (Organic photodetector), as an important type of photoelectric device, has attracted many researchers' attention and research because of its excellent mechanical flexibility, low production cost and wide selection of material, which has a lot of research on the charge transmission characteristics of OPD and interface control to the device. In order to improve performance, in order to improve the performance of OPD, in addition to the choice of high absorptivity and high carrier mobility to the receptor material, it is necessary to ensure that the carrier has a low energy barrier in the transmission. When the interface of the receptor appears to bend and forms the interface dipole, it also has a great influence on the energy barrier between the organic materials. OPD devices focus on dark current, light dark current ratio and other parameters. The smaller the dark current is, the better the dark current, the better the dark current ratio. In order to reduce the dark current of the OPD device, the resistivity of the thin film in the device can be improved by the d{hybrid method, thus reducing the dark current of the device and raising the light dark current ratio of the devices. The main contents of this paper are the main contents of this paper. The two major parts are as follows: in the first part, the properties of UV photodetectors are improved by doping control ZnO nanorods /PVK interface. AZO thin films are prepared by Al with different concentrations of d{in ZnO. The AZO thin films with different Al concentrations are characterized by XRD, PL and so on. It is concluded that increasing Al concentration makes the crystalline quality of the thin film worse. The resistance of the film is increased. Then the ZnO/PVK based UV detector of organic and inorganic composite is prepared, in which the ZnO nanoparticles are prepared by the sol-gel method and the ZnO nanorod array is prepared by hydrothermal method. The AZO thin films with different Al concentrations are applied to the ZnO/PVK based UV detector to reduce the dark current of the device and thus improve the device. Light dark current ratio, improve the performance of the device, and through the absorption spectrum of the test device, J-V curve, EQE spectrum to study the improvement of the device performance. When the d{Al concentration is 10at%, under -5V bias and 365nm, 2mW/cm2's ultraviolet light ultraviolet detector, the light dark current ratio of the ZnO/PVK based ultraviolet detector reaches 103, the dark current density of the device reaches The response degree is 17.2 A/cm2, and the response degree is 9.25A/W. second. The effect of multilayer DCJTB/C60 interface on the performance of organic near infrared detector is studied. The device is prepared by vacuum evaporation. The performance of the detector is optimized by changing the number of DCJTB/C60 layers. The device has better performance when it has 3 layers of DCJTB/C60 film, and the -1V bias voltage is applied to the device. Under the irradiation of the lower 980nm near infrared laser, the photocurrent density of the device reaches 0.18A/cm2. by means of UPS, XPS and other characterization methods. It is found that the band bending in the DCJTB/C60 interface is formed, and the interface dipole is formed, and the working mechanism of the organic near infrared detector of multi-layer DCJTB/C60 is studied.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN15
【参考文献】
相关期刊论文 前1条
1 宋词,杭寅,徐军;氧化锌晶体的研究进展[J];人工晶体学报;2004年01期
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