形核物对铸锭多晶硅晶体生长的影响
发布时间：2018-07-23 14:17
【摘要】：对硅铸锭过程中的长晶阶段进行模拟和实验对比分析,研究二氧化硅种晶熔化界面形状和晶体生长界面形状。采用光致发光仪(PL)研究硅片的杂质和缺陷[1-2]分布,用微波光电导仪(μ-PCD)研究了铸锭多晶硅锭少子寿命[3-4]的分布图。当形核物为SiO_2,SiO_2的尺寸为20μm,形核温度为1 430℃时制备的硅片表面相对完美,结构致密。
[Abstract]:The phase of long crystal in the process of silicon ingot is simulated and analyzed experimentally. The shape of melting interface and crystal growth interface of silicon dioxide are studied. The distribution of impurity and defect [1-2] in silicon wafer was studied by photoluminescence (PL), and the minority carrier lifetime (3-4) of ingot polysilicon ingot was studied by means of microwave-photoconductive instrument (渭 -PCD). When the nucleation material is SiO2SiO2, the size of SiO2 is 20 渭 m, and the nucleation temperature is 1 430 鈩，
本文编号：2139676
[Abstract]:The phase of long crystal in the process of silicon ingot is simulated and analyzed experimentally. The shape of melting interface and crystal growth interface of silicon dioxide are studied. The distribution of impurity and defect [1-2] in silicon wafer was studied by photoluminescence (PL), and the minority carrier lifetime (3-4) of ingot polysilicon ingot was studied by means of microwave-photoconductive instrument (渭 -PCD). When the nucleation material is SiO2SiO2, the size of SiO2 is 20 渭 m, and the nucleation temperature is 1 430 鈩，
本文编号：2139676
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