紫外探测器的理论仿真设计及制备研究
发布时间：2018-07-26 18:54
【摘要】：我国的海洋卫星紫外成像仪将使用Ⅲ-N半导体光电探测器进行成像,为了制备高响应率、高探测率的紫外探测器,本文结合InGaN半导体材料的光电学性质,采用理论和实验相结合方法,研究了背照式InGaN紫外探测器的光电学性能。此外,还对日盲波段AlGaN紫外探测器及SAM型APD器件研究中遇到的问题进行了研究。主要研究内容如下:首先,介绍了探测器性能表征参数及仿真平台Silvaco TCAD,对数值模拟中应用到的半导体基本方程和物理模型进行了总结。具体研究InGaN紫外探测器中的n-GaN、i-InGa N和p-Ga N厚度,极化效应,载流子SRH复合寿命等参数对器件光谱响应的影响。理论计算发现:当少数载流子SRH复合寿命在0.01-0.1ns时,仿真的响应光谱与实验测试曲线吻合较好。其中n-GaN会影响探测器的短波抑制比,但对峰值响应率影响较小。在保持n-GaN、p-GaN厚度一致情况下,随着i-InGaN层厚度的增加,探测器响应率会先逐渐增大,达到最大值后逐渐减小,当i-InGaN层厚度为400nm时响应率达到最大值。由于In摩尔组分较低,InGaN/GaN界面极化电荷密度较小,极化强度对探测器的响应率无明显影响。此外,还数值模拟了侧表面钝化层厚度,刻蚀损伤深度,p电极宽度及台面宽度对InGaN/GaN异质结探测器暗电流的影响。观察到暗电流随侧表面钝化层厚度减小而增大,随刻蚀损伤深度增大而增大。探测器的暗电流会随台面宽度增大而增大,与探测器p电极宽度无明显关系。当侧面钝化层SiO2厚度为50nm,刻蚀损伤厚度为20nm时,暗电流的仿真值与实验测试值吻合较好。同时,采用标准Ⅲ-N台面器件制备工艺制备了In_(0.03)Ga_(0.97)N/GaN异质结探测器,光敏面半径为30μm,器件的动态零偏电压电阻约为2.00×10~(12)Ω,优质因子R0A=5.66×10~7Ω?cm~2,在371nm处峰值响应率R=0.215A/W,对应的峰值探测率D*=2.34×10~(13)cm?Hz1/2?W-1。此外,在制备工艺中研究了n电极退火条件对p电极欧姆接触的影响,还对实际探测器暗电流特性进行了简单分析。当样品在氮气气氛下退火时,在保证n电极形成欧姆接触的情况下,在一定范围内,退火时间越短、退火温度越低对p电极欧姆接触的影响越小。对于探测器的暗电流有如下结果:(1)台面宽度一定时,p电极宽度越小,器件反向暗电流越小;(2)p电极一定时,台面宽度越小,器件反向暗电流越小;(3)加厚电极采用电极引出线形式的反向暗电流较直接覆盖台面的方法小约3个数量级。最后,引入带尾效应光学模型模拟AlGaN紫外探测器的响应光谱。当n1层厚度为20nm,载流子浓度为1.0×10~(18)cm~(-3)时,SAM型结构APD器件实现了加速区与倍增区分离。另外对SAM型APD器件提前击穿现象进行分析,数值模拟了场板结构、微台面结构及斜台面结构在空气中的器件电场分布情况。在一定范围内随着场板下钝化层厚度增加和场板长度加长,p电极边缘处电场强度逐渐减小并趋于稳定,可调节场板下钝化层厚度及场板长度使得p电极边缘处和场板边缘处电场强度大致相等,此时器件被提前击穿的可能性最小。在-100V高压反向偏置下,45°倾角时斜台面区有较大范围的低电场分布。
[Abstract]:In order to prepare the ultraviolet detector with high response rate and high detection rate, the marine satellite ultraviolet imager of our country will use the -N semiconductor photodetector. In this paper, the photoelectric properties of the backilluminated InGaN ultraviolet detector are studied in combination with the photoelectric properties of the InGaN semiconductor materials, and the theoretical and experimental methods are used to study the photoelectric properties of the backlighting type ultraviolet detector. The problems encountered in the study of AlGaN UV detectors and SAM APD devices in the daily blind are studied. The main contents are as follows: first, the parameters of the detector performance and the simulation platform Silvaco TCAD are introduced, and the basic semiconductor equations and physical models applied in the numerical simulation are summarized. The InGaN UV detection is studied. The influence of n-GaN, i-InGa N and p-Ga N thickness, polarization effect and carrier SRH composite life on the spectral response of the device. The theoretical calculation shows that the response spectrum of the simulation is in good agreement with the experimental test curve when the minority carrier SRH composite life is in 0.01-0.1ns. When the thickness of the i-InGaN layer increases, the response rate of the detector will gradually increase with the thickness of the i-InGaN layer increasing, and the response rate decreases gradually with the thickness of the i-InGaN layer increasing. When the thickness of the i-InGaN layer is 400nm, the response rate reaches the maximum. Because the In mole component is low, the polarization charge density of the InGaN/GaN interface is smaller and the polarization is small. The polarization of the InGaN/GaN interface is small and the polarization is polarized. The intensity has no obvious effect on the response rate of the detector. In addition, the influence of the thickness of the passivation layer on the side surface, the depth of the etching damage, the width of the p electrode and the width of the mesa on the dark current of the InGaN/GaN heterojunction detector is also numerically simulated. The dark current increases with the width of the mesa, and has no obvious relation to the width of the detector p electrode. When the thickness of the side passivation layer is 50nm and the etching damage thickness is 20nm, the simulation value of the dark current is in good agreement with the experimental test. At the same time, the In_ (0.03) Ga_ (0.97) N/GaN heterojunction detection is prepared by the preparation process of standard III -N mesa device. The radius of the photosensitive surface is 30 mu m, the dynamic zero bias voltage resistance of the device is about 2 x 10~ (12) Omega, the high quality factor R0A=5.66 x 10~7 Omega cm~2, the peak response rate R=0.215A/W at 371nm, the corresponding peak detection rate D*=2.34 * 10~ (13) cm? Hz1/2? Besides, the influence of the annealing condition on the ohm contact of the electrode is studied in the preparation process, and the effect of the electrode annealing condition on the electrode ohm contact is also studied in the preparation process. The dark current characteristic of the actual detector is simply analyzed. When the sample is annealed in the nitrogen atmosphere, the shorter the annealing time is, the lower the annealing temperature has on the ohm contact of the p electrode when the N electrode is formed in the case of ohm contact in the nitrogen atmosphere. The dark current of the detector is as follows: (1) when the width of the mesa is certain, P The smaller the width of the electrode, the smaller the reverse dark current of the device; (2) when the p electrode is certain, the smaller the width of the mesa, the smaller the reverse dark current of the device; (3) the reverse dark current in the form of the electrode leading out line is approximately 3 orders of magnitude smaller than the method of directly covering the table. Finally, the tail effect optical model is introduced to simulate the response light of the UV detector. When the thickness of the N1 layer is 20nm and the carrier concentration is 1 * 10~ (18) cm~ (-3), the SAM type APD device separates the acceleration zone from the multiplier area. In addition, the early breakdown phenomenon of the SAM type APD device is analyzed. The field plate structure, the micro platform structure and the device electric field distribution in the air are numerically simulated. With the increase of the thickness of the passivation layer under the field plate and the lengthening of the field plate length, the electric field strength at the edge of the p electrode gradually decreases and tends to be stable. The thickness of the passivation layer under the field plate and the length of the field plate can make the electric field intensity at the edge of the p electrode and the edge of the field plate approximately equal. At this time, the possibility of early breakdown of the device is the smallest. The reverse bias of the -100V high pressure is reversed. Under the 45 degree angle, there is a wide range of low electric field distribution on the inclined mesa.
【学位授予单位】：中国科学院大学(中国科学院上海技术物理研究所)
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN23
本文编号：2146972
[Abstract]:In order to prepare the ultraviolet detector with high response rate and high detection rate, the marine satellite ultraviolet imager of our country will use the -N semiconductor photodetector. In this paper, the photoelectric properties of the backilluminated InGaN ultraviolet detector are studied in combination with the photoelectric properties of the InGaN semiconductor materials, and the theoretical and experimental methods are used to study the photoelectric properties of the backlighting type ultraviolet detector. The problems encountered in the study of AlGaN UV detectors and SAM APD devices in the daily blind are studied. The main contents are as follows: first, the parameters of the detector performance and the simulation platform Silvaco TCAD are introduced, and the basic semiconductor equations and physical models applied in the numerical simulation are summarized. The InGaN UV detection is studied. The influence of n-GaN, i-InGa N and p-Ga N thickness, polarization effect and carrier SRH composite life on the spectral response of the device. The theoretical calculation shows that the response spectrum of the simulation is in good agreement with the experimental test curve when the minority carrier SRH composite life is in 0.01-0.1ns. When the thickness of the i-InGaN layer increases, the response rate of the detector will gradually increase with the thickness of the i-InGaN layer increasing, and the response rate decreases gradually with the thickness of the i-InGaN layer increasing. When the thickness of the i-InGaN layer is 400nm, the response rate reaches the maximum. Because the In mole component is low, the polarization charge density of the InGaN/GaN interface is smaller and the polarization is small. The polarization of the InGaN/GaN interface is small and the polarization is polarized. The intensity has no obvious effect on the response rate of the detector. In addition, the influence of the thickness of the passivation layer on the side surface, the depth of the etching damage, the width of the p electrode and the width of the mesa on the dark current of the InGaN/GaN heterojunction detector is also numerically simulated. The dark current increases with the width of the mesa, and has no obvious relation to the width of the detector p electrode. When the thickness of the side passivation layer is 50nm and the etching damage thickness is 20nm, the simulation value of the dark current is in good agreement with the experimental test. At the same time, the In_ (0.03) Ga_ (0.97) N/GaN heterojunction detection is prepared by the preparation process of standard III -N mesa device. The radius of the photosensitive surface is 30 mu m, the dynamic zero bias voltage resistance of the device is about 2 x 10~ (12) Omega, the high quality factor R0A=5.66 x 10~7 Omega cm~2, the peak response rate R=0.215A/W at 371nm, the corresponding peak detection rate D*=2.34 * 10~ (13) cm? Hz1/2? Besides, the influence of the annealing condition on the ohm contact of the electrode is studied in the preparation process, and the effect of the electrode annealing condition on the electrode ohm contact is also studied in the preparation process. The dark current characteristic of the actual detector is simply analyzed. When the sample is annealed in the nitrogen atmosphere, the shorter the annealing time is, the lower the annealing temperature has on the ohm contact of the p electrode when the N electrode is formed in the case of ohm contact in the nitrogen atmosphere. The dark current of the detector is as follows: (1) when the width of the mesa is certain, P The smaller the width of the electrode, the smaller the reverse dark current of the device; (2) when the p electrode is certain, the smaller the width of the mesa, the smaller the reverse dark current of the device; (3) the reverse dark current in the form of the electrode leading out line is approximately 3 orders of magnitude smaller than the method of directly covering the table. Finally, the tail effect optical model is introduced to simulate the response light of the UV detector. When the thickness of the N1 layer is 20nm and the carrier concentration is 1 * 10~ (18) cm~ (-3), the SAM type APD device separates the acceleration zone from the multiplier area. In addition, the early breakdown phenomenon of the SAM type APD device is analyzed. The field plate structure, the micro platform structure and the device electric field distribution in the air are numerically simulated. With the increase of the thickness of the passivation layer under the field plate and the lengthening of the field plate length, the electric field strength at the edge of the p electrode gradually decreases and tends to be stable. The thickness of the passivation layer under the field plate and the length of the field plate can make the electric field intensity at the edge of the p electrode and the edge of the field plate approximately equal. At this time, the possibility of early breakdown of the device is the smallest. The reverse bias of the -100V high pressure is reversed. Under the 45 degree angle, there is a wide range of low electric field distribution on the inclined mesa.
【学位授予单位】：中国科学院大学(中国科学院上海技术物理研究所)
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN23
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