当前位置:主页 > 科技论文 > 电子信息论文 >

193nm投影光刻物镜光机系统关键技术研究进展

发布时间:2018-07-27 16:14
【摘要】:结合双/多曝光的193nm投影光刻是未来5~10年大规模集成电路工业化生产的主要方法.投影物镜作为光刻机的核心分系统,其光机系统关键技术的研究进展直接影响物镜整体性能的提升.本文分析了当前集成电路装备制造业对193nm投影物镜的需求,阐述了曝光系统设计、光学元件被动支撑、位姿调节、主动变形、元件更换和系统数值孔径调节等物镜光机系统关键技术研究现状,提炼了阻碍物镜未来发展的关键科学技术问题.目前,193nm光刻物镜尚需进一步阐明高阶热像差的产生机理和校正策略,解决多自由度位姿标定问题,形成完备的物镜研制方法,指导高成像质量物镜的制造.
[Abstract]:Double / multi-exposure 193nm projection lithography is the main method for industrial production of LSI in the next 5 ~ 10 years. As the core subsystem of lithography system, the research progress of the key technology of projection objective system directly affects the improvement of the overall performance of the objective lens. This paper analyzes the demand of the current IC equipment manufacturing industry for 193nm projection objective lens, and expounds the design of exposure system, passive support of optical elements, position and pose adjustment, active deformation, etc. The research status of the key technologies of the objective lens system, such as element replacement and system numerical aperture adjustment, is presented, and the key scientific and technological problems hindering the future development of the objective lens are refined. At present, it is necessary to further clarify the mechanism and correction strategy of high-order thermal aberration, to solve the problem of multi-degree-of-freedom position calibration, to form a complete objective lens development method, and to guide the manufacture of high imaging quality objective lens.
【作者单位】: 中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室超精密光学工程研究中心;中国科学院大学;
【基金】:国家自然科学基金(批准号:61504142) 国家科技重大专项基金(批准号:2009ZX02205)资助项目
【分类号】:TN305.7

【相似文献】

相关期刊论文 前1条

1 沈叔涛;;微系统关键技术的发展概况[J];红外与激光工程;2012年04期

相关会议论文 前1条

1 黄进;胡英;马孜;汪洋;;弧形扫描系统关键技术研究[A];第二十七届中国控制会议论文集[C];2008年



本文编号:2148383

资料下载
论文发表

本文链接:https://www.wllwen.com/kejilunwen/dianzigongchenglunwen/2148383.html


Copyright(c)文论论文网All Rights Reserved | 网站地图 |

版权申明:资料由用户64259***提供,本站仅收录摘要或目录,作者需要删除请E-mail邮箱bigeng88@qq.com