全透明ZnO紫外光电探测器的室温制备与性能研究
发布时间：2018-07-31 05:50
【摘要】：半导体紫外光电探测器在民用、军事以及商业方面都有着广泛的应用,近年来引起了人们的极大研究兴趣。ZnO由于其优异的光学以及电学性质,在紫外光电探测器领域有着广泛的应用前景。全透明是电子产品未来发展的必然趋势,因此本文新提出在价格低廉的普通玻璃衬底上、常温下制备全透明ZnO薄膜,以ZnO紫外光电探测器的制备及其光电性质的研究为中心展开,对ZnO薄膜本身的制备和表征、紫外探测器的制备和表征分别进行了深入的研究。首先选用磁控溅射法在普通玻璃衬底上制备ZnO薄膜,利用XRD以及PL分析比较了不同工艺参数下制备的样品的薄膜质量。先后研究了溅射功率、溅射压强和退火处理对薄膜结晶质量的影响,经过分析比较XRD的特征衍射峰强度、半宽高、晶粒尺寸大小,以及比较PL谱中由缺陷引起的峰的强弱,得出最佳工艺参数。随后在ZnO薄膜上制备MSM结构紫外光电探测器,探索不同功函数的金属电极、退火与否以及不同的退火气氛、不同的叉指对数对探测器性能的影响,性能测试包括Ⅰ-Ⅴ特性曲线、开关比以及紫外光响应度、紫外可见光抑制比等。所制备的ZnO紫外探测器的成本低廉,性能良好,在可见光区域透过率高于90%,实现了在普通玻璃衬底上、常温下制备全透明ZnO紫外光电探测器。在保证紫外光电探测器性能的同时,成本大大减小,所开展的工作对ZnO薄膜在光电领域的应用具有一定的意义。
[Abstract]:Semiconductor UV photodetectors have been widely used in civil, military and commercial fields. In recent years, ZnO has attracted great interest because of its excellent optical and electrical properties. It has a wide application prospect in the field of UV photodetector. Full transparency is an inevitable trend in the future development of electronic products. Therefore, it is proposed in this paper to prepare fully transparent ZnO thin films on low price ordinary glass substrates at room temperature. The preparation and characterization of ZnO thin films and the preparation and characterization of UV detectors were studied in detail, focusing on the preparation and photoelectric properties of ZnO photodetectors. Firstly, ZnO thin films were prepared on ordinary glass substrates by magnetron sputtering. The quality of the films prepared under different technological parameters was analyzed and compared by XRD and PL. The effects of sputtering power, sputtering pressure and annealing treatment on the crystallization quality of XRD films were studied successively. The characteristic diffraction peak intensity, half width, grain size, and the intensity of defects in PL spectra were analyzed and compared. The optimum process parameters are obtained. Then the MSM structure UV photodetectors were fabricated on ZnO thin films. The effects of metal electrodes with different work functions, annealing or not, different annealing atmosphere and different interDigital logarithms on the performance of the detectors were investigated. The performance tests include I-V characteristic curve, switching ratio, UV light responsivity, UV-Vis suppression ratio and so on. The ZnO UV detector has the advantages of low cost and good performance. The transmittance of the UV detector is higher than 90 in the visible region. The transparent ZnO UV photodetector is fabricated on the ordinary glass substrate at room temperature. The cost is greatly reduced while the performance of UV photodetectors is guaranteed. The work carried out has a certain significance for the application of ZnO thin films in the field of photoelectricity.
【学位授予单位】：南京理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN23
本文编号：2154627
[Abstract]:Semiconductor UV photodetectors have been widely used in civil, military and commercial fields. In recent years, ZnO has attracted great interest because of its excellent optical and electrical properties. It has a wide application prospect in the field of UV photodetector. Full transparency is an inevitable trend in the future development of electronic products. Therefore, it is proposed in this paper to prepare fully transparent ZnO thin films on low price ordinary glass substrates at room temperature. The preparation and characterization of ZnO thin films and the preparation and characterization of UV detectors were studied in detail, focusing on the preparation and photoelectric properties of ZnO photodetectors. Firstly, ZnO thin films were prepared on ordinary glass substrates by magnetron sputtering. The quality of the films prepared under different technological parameters was analyzed and compared by XRD and PL. The effects of sputtering power, sputtering pressure and annealing treatment on the crystallization quality of XRD films were studied successively. The characteristic diffraction peak intensity, half width, grain size, and the intensity of defects in PL spectra were analyzed and compared. The optimum process parameters are obtained. Then the MSM structure UV photodetectors were fabricated on ZnO thin films. The effects of metal electrodes with different work functions, annealing or not, different annealing atmosphere and different interDigital logarithms on the performance of the detectors were investigated. The performance tests include I-V characteristic curve, switching ratio, UV light responsivity, UV-Vis suppression ratio and so on. The ZnO UV detector has the advantages of low cost and good performance. The transmittance of the UV detector is higher than 90 in the visible region. The transparent ZnO UV photodetector is fabricated on the ordinary glass substrate at room temperature. The cost is greatly reduced while the performance of UV photodetectors is guaranteed. The work carried out has a certain significance for the application of ZnO thin films in the field of photoelectricity.
【学位授予单位】：南京理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN23
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