基于CMOS工艺的太赫兹成像检波单元的研究
发布时间：2018-08-04 18:57
【摘要】：频率在太赫兹频段内的电磁波（简称太赫兹波）在安保，医疗和通信等领域内有重要应用，因此研究在室温下工作的低成本便携式太赫兹探测器具有重要意义。本文研究设计了一种基于TSMC180nm CMOS工艺的太赫兹成像检波单元，它可以用于大规模成像阵列。检波单元包括片上太赫兹天线，，基于MOS管的检波器和阻抗匹配网络结构。这种检波单元具有成本低，体积小，集成度高，一致性强，易于实现大规模阵列，可以同数字处理电路集成等多方面优点。 其中片上太赫兹天线采用小环天线的形式，同时利用人工磁导体（AMC）提高天线性能。这种天线仅使用了CMOS工艺中的金属互连线来实现,因此同传统的CMOS工艺兼容。天线实现了3dB的增益，天线的直径为98微米。本文也提出一种新型人工磁导体的结构，这种结构可以在单位面积上实现更多的结构单元，并且和CMOS工艺相兼容。 片上太赫兹检波器采用MOS管实现，MOS管沟道中太赫兹波的传输具有等离子体波传输的特点，利用这一特点可以实现检波功能。本文对MOS管沟道中太赫兹波的传输问题进行数学建模，并利用模型的解，结合TSMC180nm的工艺参数，设计了基于MOS管的太赫兹检波器。MOS管沟道的长为180纳米，宽为1微米，理论实现了88V/W的响应率和45nV/√Hz的等效噪声功率。 天线与MOS管检波器间的阻抗匹配网络完全采用CMOS工艺中的金属互连线实现，因此也与CMOS工艺完全兼容。整个基于CMOS工艺的太赫兹成像检波单元的响应率为160V/W，等效噪声功率为25nV/√Hz。
[Abstract]:The electromagnetic wave (THz) with frequency in terahertz band has important applications in the fields of security, medical treatment and communication, so it is of great significance to study low-cost portable terahertz detectors operating at room temperature. In this paper, a terahertz imaging detector based on TSMC180nm CMOS process is designed, which can be used in large scale imaging array. The detector unit consists of an on-chip terahertz antenna, a detector based on MOS tube and an impedance matching network structure. The detector has the advantages of low cost, small size, high integration, strong consistency, easy to realize large scale array, and can be integrated with digital processing circuit. The terahertz antenna is a small loop antenna and the artificial magnetic conductor (AMC) is used to improve the antenna performance. The antenna is implemented using only the metal interconnects in the CMOS process and is therefore compatible with the traditional CMOS process. The antenna achieves the gain of 3dB, and the diameter of antenna is 98 渭 m. This paper also presents a new structure of artificial magnetic conductor, which can realize more structural units per unit area and is compatible with CMOS process. The terahertz wave transmission in the channel of the MOS tube has the characteristics of plasma wave transmission, and the detection function can be realized by using the characteristics of the on-chip terahertz detector. In this paper, the transmission problem of terahertz wave in MOS channel is modeled. By using the solution of the model and the technological parameters of TSMC180nm, the length and width of THz geophone. MOS channel based on MOS tube are 180 nm and 1 渭 m, respectively. The responsivity of 88V/W and the equivalent noise power of 45nV/ are realized theoretically. The impedance matching network between antenna and MOS detector is realized by metal interconnection in CMOS process, so it is also compatible with CMOS process. The response rate of the whole terahertz imaging detector based on CMOS process is 160 V / W and the equivalent noise power is 25nV/ Hz.
【学位授予单位】：北京理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN763.1;TN820
[Abstract]:The electromagnetic wave (THz) with frequency in terahertz band has important applications in the fields of security, medical treatment and communication, so it is of great significance to study low-cost portable terahertz detectors operating at room temperature. In this paper, a terahertz imaging detector based on TSMC180nm CMOS process is designed, which can be used in large scale imaging array. The detector unit consists of an on-chip terahertz antenna, a detector based on MOS tube and an impedance matching network structure. The detector has the advantages of low cost, small size, high integration, strong consistency, easy to realize large scale array, and can be integrated with digital processing circuit. The terahertz antenna is a small loop antenna and the artificial magnetic conductor (AMC) is used to improve the antenna performance. The antenna is implemented using only the metal interconnects in the CMOS process and is therefore compatible with the traditional CMOS process. The antenna achieves the gain of 3dB, and the diameter of antenna is 98 渭 m. This paper also presents a new structure of artificial magnetic conductor, which can realize more structural units per unit area and is compatible with CMOS process. The terahertz wave transmission in the channel of the MOS tube has the characteristics of plasma wave transmission, and the detection function can be realized by using the characteristics of the on-chip terahertz detector. In this paper, the transmission problem of terahertz wave in MOS channel is modeled. By using the solution of the model and the technological parameters of TSMC180nm, the length and width of THz geophone. MOS channel based on MOS tube are 180 nm and 1 渭 m, respectively. The responsivity of 88V/W and the equivalent noise power of 45nV/ are realized theoretically. The impedance matching network between antenna and MOS detector is realized by metal interconnection in CMOS process, so it is also compatible with CMOS process. The response rate of the whole terahertz imaging detector based on CMOS process is 160 V / W and the equivalent noise power is 25nV/ Hz.
【学位授予单位】：北京理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN763.1;TN820
【共引文献】
相关期刊论文 前10条
1 苏同福;于斌;韩鹏昱;李永良;李伟;赵国忠;宫长荣;;多壁碳纳米管太赫兹图谱研究[J];光谱学与光谱分析;2009年11期
2 高飞;陈立群;冯广智;鲁远甫;杨s
本文编号：2164810
本文链接：https://www.wllwen.com/kejilunwen/dianzigongchenglunwen/2164810.html
