ZnS半导体薄膜材料可控制备与性能研究
发布时间：2018-08-06 16:32
【摘要】：本论文通过溅射和蒸镀方法沉积ZnO、Zn或Zn/S/Zn三层结构薄膜，并进行硫化处理，制备出ZnS薄膜。用X射线衍射仪、扫描电子显微镜以及紫外-可见分光光度计等对薄膜进行了表征，研究了硫化条件对薄膜结构和光学性能的影响。 ZnO薄膜在空气和H2S气氛中退火后，只有硫化温度大于300℃时，才能全部转变为六方ZnS薄膜，且沿(002)晶面择优生长。最佳的硫化温度和时间分别为500℃和2h，所得ZnS薄膜结晶性好、均匀致密，可见光范围光透过率约80％。空气退火温度的适当增加，会改善ZnS薄膜晶体质量。此外，讨论了ZnS薄膜发光谱及其发光机理。 ZnO薄膜在500℃硫蒸气中则需长达18h时间硫化才能完全转变为ZnS。所得六方结构ZnS薄膜沿(002)晶面择优生长但薄膜光透过率低以及吸收边宽化。硫化后薄膜晶粒明显比未硫化薄膜大得多，因为ZnS再结晶缘故，，其晶粒尺寸约为1μm。而Zn薄膜在500℃硫蒸气中仅1h就能全部生成ZnS薄膜，其低的光透光率可通过梯度硫化进行改善。 三层膜结构在Ar气氛中进行退火，可以得到立方ZnS薄膜，其可见光范围的光透过率可达80％。这与在H2S气氛中硫化溅射ZnO制备ZnS薄膜光透过率相当，而且前者制备方法更绿色环保。
[Abstract]:In this paper, ZnS thin films were prepared by sputtering and evaporation deposition. The films were characterized by X-ray diffractometer, scanning electron microscope and UV-Vis spectrophotometer. The effects of vulcanization conditions on the structure and optical properties of the films were investigated. The ZnO films were annealed in air and H _ 2S atmosphere. Only when the vulcanization temperature is higher than 300 鈩
本文编号：2168308
[Abstract]:In this paper, ZnS thin films were prepared by sputtering and evaporation deposition. The films were characterized by X-ray diffractometer, scanning electron microscope and UV-Vis spectrophotometer. The effects of vulcanization conditions on the structure and optical properties of the films were investigated. The ZnO films were annealed in air and H _ 2S atmosphere. Only when the vulcanization temperature is higher than 300 鈩
本文编号：2168308
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