AlGaN雪崩光电二极管噪声特性测试及分析
发布时间：2018-08-07 16:06
【摘要】：在紫外应用中,Ga N-Al Ga N体系材料具有许多其它宽禁带材料所不具备的优异性能,包括直接可调带隙、满足大功率、高温、高频和高速半导体器件的工作要求。2014年,包括中村修二(Shuji Nakamura)在内的三位日本科学家因为在Ga N材料生长和掺杂方面的突破性研究而被授予诺贝尔物理学奖,更加明确了Ga N基材料在紫外发光和探测领域的前景。最近十几年间Ga N-Al Ga N基雪崩光电二极管(APD)的研制获得了长足发展,国内在这一领域的研究中也有很多重要贡献。噪声特性作为半导体光电器件质量的重要表征,随着器件研制的进步,国外R.Mc Clintock,Turgut Tut等人已陆续报道了Al Ga N APD的噪声特性和碰撞电离参数的研究。我所在研究室以许金通副研究员为主导,开展Ga N-Al Ga N基APD研发已有多年经验,器件研究结果颇多,却一直没有对器件噪声特性开展足够的研究工作。本文围绕Al Ga N APD的噪声测试问题,通过搭建、校准测试平台,利用Si基器件整理雪崩光电二极管噪声规律,实测Al Ga N器件等工作,初步完成了Al Ga N APD器件噪声特性的测试工作。首先,自主搭建了能够满足高偏压、小电流测试要求的噪声测试系统。使用多层屏蔽盒、有效接地等屏蔽措施,屏蔽了工频干扰和空间电磁场对测试系统的干扰。之后对测试系统进行了校准,发现SR570型前置放大器在3 d B带宽内的频率响应并非保持水平,DL1211型前置放大器的频响则在带宽边缘下降严重。利用电阻噪声对两种放大器的频率响应进行了校正,从而保证了系统能够准确地测量待测对象的噪声。然后使用购买的商品Si基APD进行噪声测试。通过噪声密度谱测试了解了过剩散粒噪声密度谱的特性,拟合了Si器件的噪声谱,在倍增因子小于300时,获得的过剩噪声因子满足碰撞电离系数比约0.1~0.2时的理论预期;当倍增因子大于300后,过剩噪声因子出现类似“死区效应”所预言的行为。计算了等效噪声功率密度谱,并与器件说明中罗列的相关参数比较,获得了二者吻合的结果。测试了Si APD宽带噪声,并计算信噪比,发现Si APD器件信噪比受到器件噪声和系统本底噪声的控制,信噪比最大值出现在器件噪声与系统本底噪声大小相当的状态下。最后制作了Al Ga N APD器件,并测试了器件电流和噪声特性。器件I-V曲线均表现出雪崩击穿特性,击穿电压从90 V到130 V不等。噪声密度谱测试仅观测到低频噪声,并未观测到过剩散粒噪声。拟合低频噪声谱,发现器件噪声谱以Hooge模型的1/f噪声为主,并可能混合有burst噪声,由于Hooge噪声只在表面状况较好时容易观察到,因此结果显示了器件较好的表面钝化处理;而较大的1/f噪声则说明了材料质量仍存在的问题。利用噪声密度谱计算的信噪比,发现其最大值出现在60 V左右的中低电压处,远未达到雪崩电压,倍增因子亦处在50以内。该结果与Si APD中出现的情况相似,被认为与系统本底噪声的大小有关。之后测试了器件宽带噪声,并计算了响应的信噪比。其结果显示,虽然在本底噪声相对较大时信噪比最大值在雪崩电压附近的高倍增处出现,但信噪比极值与反偏电压和本底噪声之间并无十分明显的规律,器件信噪比更多地取决于特定工作状态下器件自身低频噪声的大小。
[Abstract]:In UV applications, the Ga N-Al Ga N system materials have excellent properties that many other wide band gap materials do not possess, including direct adjustable band gaps to meet the requirements of high power, high temperature, high frequency and high-speed semiconductor devices for.2014, three Japanese scientists, including Nakamura Shuji (Shuji Nakamura), grow and grow in Ga N materials. The breakthrough research of doping has been awarded the Nobel prize in physics, which makes it more clear that the Ga N based materials are in the field of ultraviolet luminescence and detection. The development of Ga N-Al Ga N based avalanche photodiode (APD) has made considerable progress in the last decade, and there are many important contributions to the research in this field. The important characterization of the quality of semiconductor optoelectronic devices, with the progress of the development of devices, foreign R.Mc Clintock, Turgut Tut and others have reported the noise characteristics and collision ionization parameters of Al Ga N APD in succession. The research room of our institute is based on the deputy researcher of Xu Jintong, developing Ga N-Al Ga N based research and development for many years. In this paper, the noise characteristics of Al Ga N APD are not studied enough. In this paper, the noise characteristics of Al Ga N APD devices are preliminarily completed by setting up, calibrating the testing platform, using Si based devices to sort out the noise law of avalanche photodiodes and measuring the Al Ga N devices. First, the noise testing system which can meet the requirements of high bias and small current test is built independently. Using multi-layer shielding box, effective grounding and other shielding measures, the interference of power frequency and space electromagnetic field are shielded. Then the test system is calibrated, and the frequency response of SR570 preamplifier in 3 D B bandwidth is found. The frequency response of the DL1211 preamplifier has a serious decline in the bandwidth edge. The frequency response of the two amplifiers is corrected by using the resistance noise, so that the system can accurately measure the noise of the object to be measured. Then the noise test is performed using the purchased commodity Si based APD. The noise density spectrum is tested. The characteristics of the excess bulk density spectrum are solved, and the noise spectrum of the Si device is fitted. When the multiplier factor is less than 300, the excess noise factor can satisfy the theoretical expectation when the collision ionization coefficient is about 0.1~0.2. When the multiplier factor is more than 300, the excess noise factor appears similar to the "dead zone effect". The equivalent noise is calculated. The acoustic power density spectrum is compared with the related parameters in the device description. The results of the two match are obtained. The Si APD broadband noise is tested and the signal to noise ratio is calculated. It is found that the signal to noise ratio of the Si APD device is controlled by the noise of the device and the background noise of the system, and the maximum value of the signal to noise ratio is equal to the size of the background noise of the system. At last, the Al Ga N APD device was made, and the current and noise characteristics of the device were tested. The device I-V curve showed avalanche breakdown characteristics, the breakdown voltage was from 90 V to 130 V. The noise density spectrum test only observed low frequency noise, and did not observe the excess granular noise. Fitting low frequency noise spectrum, found device noise spectrum with Hooge module. The 1/f noise is the main type and may be mixed with burst noise. Because Hooge noise is easy to be observed when the surface condition is good, the result shows the better surface passivation treatment, while the larger 1/f noise shows the problem of the material quality still existing. The maximum value of the noise ratio calculated by the noise density spectrum is found to be 6 The low voltage at about 0 V is far from avalanche voltage, and the multiplication factor is also within 50. This result is similar to that in the Si APD, and is considered to be related to the size of the background noise of the system. Then the broadband noise of the device is tested and the signal to noise ratio of the response is calculated. The result shows that the signal to noise ratio is relatively large at the background noise. The maximum value appears at the high multiplier near the avalanche voltage, but there is no obvious law between the extreme value of the signal to noise ratio and the back bias voltage and the background noise. The signal to noise ratio of the device depends more on the low frequency noise of the device itself under the specific working state.
【学位授予单位】：中国科学院研究生院(上海技术物理研究所)
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN312.7
[Abstract]:In UV applications, the Ga N-Al Ga N system materials have excellent properties that many other wide band gap materials do not possess, including direct adjustable band gaps to meet the requirements of high power, high temperature, high frequency and high-speed semiconductor devices for.2014, three Japanese scientists, including Nakamura Shuji (Shuji Nakamura), grow and grow in Ga N materials. The breakthrough research of doping has been awarded the Nobel prize in physics, which makes it more clear that the Ga N based materials are in the field of ultraviolet luminescence and detection. The development of Ga N-Al Ga N based avalanche photodiode (APD) has made considerable progress in the last decade, and there are many important contributions to the research in this field. The important characterization of the quality of semiconductor optoelectronic devices, with the progress of the development of devices, foreign R.Mc Clintock, Turgut Tut and others have reported the noise characteristics and collision ionization parameters of Al Ga N APD in succession. The research room of our institute is based on the deputy researcher of Xu Jintong, developing Ga N-Al Ga N based research and development for many years. In this paper, the noise characteristics of Al Ga N APD are not studied enough. In this paper, the noise characteristics of Al Ga N APD devices are preliminarily completed by setting up, calibrating the testing platform, using Si based devices to sort out the noise law of avalanche photodiodes and measuring the Al Ga N devices. First, the noise testing system which can meet the requirements of high bias and small current test is built independently. Using multi-layer shielding box, effective grounding and other shielding measures, the interference of power frequency and space electromagnetic field are shielded. Then the test system is calibrated, and the frequency response of SR570 preamplifier in 3 D B bandwidth is found. The frequency response of the DL1211 preamplifier has a serious decline in the bandwidth edge. The frequency response of the two amplifiers is corrected by using the resistance noise, so that the system can accurately measure the noise of the object to be measured. Then the noise test is performed using the purchased commodity Si based APD. The noise density spectrum is tested. The characteristics of the excess bulk density spectrum are solved, and the noise spectrum of the Si device is fitted. When the multiplier factor is less than 300, the excess noise factor can satisfy the theoretical expectation when the collision ionization coefficient is about 0.1~0.2. When the multiplier factor is more than 300, the excess noise factor appears similar to the "dead zone effect". The equivalent noise is calculated. The acoustic power density spectrum is compared with the related parameters in the device description. The results of the two match are obtained. The Si APD broadband noise is tested and the signal to noise ratio is calculated. It is found that the signal to noise ratio of the Si APD device is controlled by the noise of the device and the background noise of the system, and the maximum value of the signal to noise ratio is equal to the size of the background noise of the system. At last, the Al Ga N APD device was made, and the current and noise characteristics of the device were tested. The device I-V curve showed avalanche breakdown characteristics, the breakdown voltage was from 90 V to 130 V. The noise density spectrum test only observed low frequency noise, and did not observe the excess granular noise. Fitting low frequency noise spectrum, found device noise spectrum with Hooge module. The 1/f noise is the main type and may be mixed with burst noise. Because Hooge noise is easy to be observed when the surface condition is good, the result shows the better surface passivation treatment, while the larger 1/f noise shows the problem of the material quality still existing. The maximum value of the noise ratio calculated by the noise density spectrum is found to be 6 The low voltage at about 0 V is far from avalanche voltage, and the multiplication factor is also within 50. This result is similar to that in the Si APD, and is considered to be related to the size of the background noise of the system. Then the broadband noise of the device is tested and the signal to noise ratio of the response is calculated. The result shows that the signal to noise ratio is relatively large at the background noise. The maximum value appears at the high multiplier near the avalanche voltage, but there is no obvious law between the extreme value of the signal to noise ratio and the back bias voltage and the background noise. The signal to noise ratio of the device depends more on the low frequency noise of the device itself under the specific working state.
【学位授予单位】：中国科学院研究生院(上海技术物理研究所)
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN312.7
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