PIN黑硅原理性探测器试制
发布时间：2018-08-08 15:14
【摘要】：黑硅是在晶体硅表面通过特定的方法加工得到的一种新型材料,它对入射光的减反作用明显且具有近红外延伸效应,因而在光电探测器和太阳能电池等领域具有广阔的应用前景。一方面,黑硅因为其表面的微结构,可以对入射光进行受控管理,使入射光能够被硅材料充分吸收,降低单晶硅的反射率;另一方面,由于S、Te等氧族元素的注入,在硅的禁带中引入了新的杂质能级,使硅的能带结构发生改变,使得硅对近红外波段的光的吸收有明显的增强。本文采用微机械加工(MEMS)工艺、金属催化刻蚀工艺并结合离子注入工艺的方法,在单晶硅表面制备一层微结构黑硅,并对制备的黑硅材料进行反射率和吸收率等测试研究,获得了在可见光和近红外波段均有较好光谱吸收特性的黑硅微结构材料。基于制备良好的黑硅微结构材料,以Si-PIN光电探测器为应用对象,将黑硅材料引入Si-PIN探测器的N层下表面,并分别按正照式和背照式两种器件结构进行晶圆(wafer)级流片加工和封装,进行基于黑硅材料的新型Si-PIN光电探测器试制,对比测试探测器的光谱响应范围、响应度、响应时间、暗电流等主要性能参数。本文取得的主要研究结果如下:(1)采用MEMS工艺、金属催化刻蚀工艺并结合离子注入的工艺制备得到的微结构黑硅,在可见光波段和近红外波段的反射率明显降低,吸收率明显增强;(2)基于黑硅材料的正照式Si-PIN光电探测器(光敏面直径Φ2 mm)的光谱响应范围为400~1100 nm,峰值响应度达到0.71 A/W(@1000 nm,12V),1060 nm处响应度达到0.45 A/W(@1060 nm,12V);(3)基于黑硅材料的背照式Si-PIN光电探测器(光敏面尺寸3.6mm×3.6mm)的光谱响应范围为400~1100 nm,峰值响应度达到0.68 A/W(@1030 nm,12V),1060nm处响应度达到0.48 A/W(@1060 nm,12V);(4)基于黑硅材料的正照式和背照式Si-PIN光电探测器的响应时间≤10 ns,暗电流≤10 nA;(5)基于黑硅材料的正照式和背照式Si-PIN光电探测器在-25oC~+60oC的温度范围内,能正常工作。
[Abstract]:Black silicon is a new type of material fabricated on the surface of crystal silicon by special method. It has obvious anti-reaction effect to incident light and has the effect of near infrared extension. Therefore, it has a broad application prospect in the fields of photodetector and solar cell. On the one hand, because of the microstructure of its surface, black silicon can be controlled to manage the incident light, so that the incident light can be fully absorbed by the silicon material, thus reducing the reflectivity of monocrystalline silicon; on the other hand, because of the injection of oxygen group elements such as Snte, A new impurity energy level is introduced into the band gap of silicon, which makes the band structure of silicon change and the absorption of light in near infrared band obviously enhanced. In this paper, a layer of microstructured black silicon was prepared on the surface of monocrystalline silicon by micromachining (MEMS) process, metal catalytic etching process and ion implantation process. The reflectivity and absorptivity of the prepared black silicon materials were measured and studied. Black silicon microstructures with good spectral absorption properties in both visible and near infrared bands were obtained. Based on the preparation of fine black silicon microstructural materials and Si-PIN photodetectors as the application object, the black silicon materials were introduced into the N layer surface of the Si-PIN detectors, and the wafer (wafer) wafers were fabricated and encapsulated according to the normal and back-illuminated device structures, respectively. A new type of Si-PIN photodetector based on black silicon material was developed. The spectral response range, responsivity, response time, dark current and other main performance parameters of the detector were compared. The main results obtained in this paper are as follows: (1) the reflectivity of the microstructured black silicon prepared by MEMS, metal catalytic etching and ion implantation has been significantly reduced in the visible and near infrared bands. (2) the spectral response range of Si-PIN photodetector based on black silicon (Guang Min diameter 桅 2 mm) is 400,1100 nm, and the peak responsivity is 0.71 A / W (1 000 nm / 12 V) at 1060 nm (r = 0.45 Ar / W (r = 1060 nm / 12 V); (3) based on black silicon material. The spectral response range of the Si-PIN photodetector (Guang Min plane size 3.6mm 脳 3.6mm) is 400,1100 nm, and the peak responsivity is 0.68A / W (1030nm / 12V) at 1060nm. The response time is 0.48A / W (r = 1060nm / 12V); (_ 4) based on the black silicon material and the response time of the black silicon based and back-illuminated Si-PIN photodetectors. 10ns, dark current 鈮，
本文编号：2172176
[Abstract]:Black silicon is a new type of material fabricated on the surface of crystal silicon by special method. It has obvious anti-reaction effect to incident light and has the effect of near infrared extension. Therefore, it has a broad application prospect in the fields of photodetector and solar cell. On the one hand, because of the microstructure of its surface, black silicon can be controlled to manage the incident light, so that the incident light can be fully absorbed by the silicon material, thus reducing the reflectivity of monocrystalline silicon; on the other hand, because of the injection of oxygen group elements such as Snte, A new impurity energy level is introduced into the band gap of silicon, which makes the band structure of silicon change and the absorption of light in near infrared band obviously enhanced. In this paper, a layer of microstructured black silicon was prepared on the surface of monocrystalline silicon by micromachining (MEMS) process, metal catalytic etching process and ion implantation process. The reflectivity and absorptivity of the prepared black silicon materials were measured and studied. Black silicon microstructures with good spectral absorption properties in both visible and near infrared bands were obtained. Based on the preparation of fine black silicon microstructural materials and Si-PIN photodetectors as the application object, the black silicon materials were introduced into the N layer surface of the Si-PIN detectors, and the wafer (wafer) wafers were fabricated and encapsulated according to the normal and back-illuminated device structures, respectively. A new type of Si-PIN photodetector based on black silicon material was developed. The spectral response range, responsivity, response time, dark current and other main performance parameters of the detector were compared. The main results obtained in this paper are as follows: (1) the reflectivity of the microstructured black silicon prepared by MEMS, metal catalytic etching and ion implantation has been significantly reduced in the visible and near infrared bands. (2) the spectral response range of Si-PIN photodetector based on black silicon (Guang Min diameter 桅 2 mm) is 400,1100 nm, and the peak responsivity is 0.71 A / W (1 000 nm / 12 V) at 1060 nm (r = 0.45 Ar / W (r = 1060 nm / 12 V); (3) based on black silicon material. The spectral response range of the Si-PIN photodetector (Guang Min plane size 3.6mm 脳 3.6mm) is 400,1100 nm, and the peak responsivity is 0.68A / W (1030nm / 12V) at 1060nm. The response time is 0.48A / W (r = 1060nm / 12V); (_ 4) based on the black silicon material and the response time of the black silicon based and back-illuminated Si-PIN photodetectors. 10ns, dark current 鈮，
本文编号：2172176
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