基于SOI的抗辐照结构研究

发布时间：2018-08-08 21:50

【摘要】：随着我国航天航空和军事工业的高速发展,高可靠性电子元器件和集成电路在其中的重要性日渐突出,抗辐照设计的重要性越来越突出了。SOI(Silicon-onInsulator)技术作为摩尔定律继续推进的重要方向之一,在诞生初期就在抗辐照方面具有得天独厚的优势。本文主要研究了总剂量和单粒子辐射下的SOI器件特性,为进一步设计抗辐照电路提供理论基础,本文研究的主要内容包括:本文主要基于Synopsys Sentaurus TCAD工具,根据工程的需要,首先建立了TSMC 130nm体硅CMOS器件结构。根据该器件结构构建SOI NMOS器件模型,根据沟道耗尽情况可以把SOI器件分成FD(Fully-Depleted)SOI和PD(PartiallyDepleted)SOI两种。其中对于PD SOI器件,采用了BTS(Body Tied Source)和H型栅两种体接触方式来抑制体效应,对比了不同器件在辐照前的器件特性。接着基于总剂量效应,利用固定电荷模型对其进行建模,对构建的器件结构进行总剂量辐照仿真。数值仿真结果表明在采用相同的源漏结构时,在总剂量辐照以后SOI器件泄漏电流明显增大,跨导退化和阈值电压漂移加重。仿真结果同时显示了,在同样的辐照条件下,FD SOI器件的阈值电压退化更加明显。对于PD SOI器件,采用H型栅结构不仅能够有效的抑制体效应提高器件跨导,而且能够提高PD SOI器件的抗辐照能力。同样,BTS结构在一定程度上提高器件的抗总剂量辐照能力。最后利用Sentaurus中的单粒子模型,研究了重粒子入射对不同结构的SOI器件的物理过程。研究不同因素对单粒子效应的影响,包括了单粒子入射位置、单粒子入射角度、漏端电压大小、体接触方式、总剂量效应等对单粒子瞬态电流的影响。通过器件仿真,对漏斗电荷模型进行了研究。结果显示,相对于体硅器件,SOI器件的漏极电流更低,漏极收集的电荷也相应降低,尤其是FD SOI器件,抗单粒子效应能力明细提高了。在电路应用中,考虑到空间辐射的复杂性,在电路设计时需要需要同时考虑总剂量和单粒子辐射。从反相器仿真结果来看,SOI反相器逻辑翻转的几率要远小于体硅CMOS反相器,而FD SOI反相器要优于PD SOI反相器,在几种PD SOI反相器中,H型栅SOI反相器抗辐射能力最强。
[Abstract]:With the rapid development of aerospace and military industry in China, the importance of high reliability electronic components and integrated circuits is becoming more and more important. The importance of anti-irradiation design has become more and more important. SOI (Silicon-onInsulator) technology, as one of the important directions of Moore's law, has a unique advantage in the field of radiation resistance in the early stage of its birth. In this paper, the characteristics of SOI devices under total dose and single particle radiation are studied. The main contents of this paper are as follows: based on Synopsys Sentaurus TCAD tools and engineering requirements, the main contents of this paper are as follows: Firstly, the structure of TSMC 130nm bulk silicon CMOS device is established. According to the structure of SOI NMOS device model, the SOI device can be divided into FD (Fully-Depleted) SOI and PD (PartiallyDepleted) SOI according to channel depletion. For PD SOI devices, BTS (Body Tied Source) and H-gate contact methods are used to suppress the bulk effect, and the characteristics of different devices before irradiation are compared. Then, based on the total dose effect, the fixed charge model is used to model the device structure, and the total dose irradiation simulation is carried out. Numerical simulation results show that the leakage current, transconductance degradation and threshold voltage drift of SOI devices increase obviously after total dose irradiation with the same source-drain structure. The simulation results also show that the threshold voltage degradation of FD SOI devices is more obvious under the same irradiation conditions. For PD SOI devices, H-gate structure can not only effectively suppress the bulk effect and improve the transconductance of PD SOI devices, but also improve the radiation resistance of PD SOI devices. At the same time, the BTS structure improves the total dose radiation resistance of the device to a certain extent. Finally, the physical process of heavy particle incident on SOI devices with different structures is studied by using the single particle model in Sentaurus. The effects of different factors on the single particle effect, including the incident position of single particle, the incident angle of single particle, the voltage of leakage terminal, the contact mode and the total dose effect, are studied. The model of funnel charge is studied by device simulation. The results show that compared with bulk silicon devices, the drain current is lower and the charge collected by drain is lower. Especially for FD SOI devices, the ability to resist single particle effect is improved. In the circuit application, considering the complexity of space radiation, the total dose and single particle radiation should be considered in the circuit design. According to the simulation results, the probability of logic inversion of CMOS inverters is much lower than that of bulk silicon CMOS inverters, while the FD SOI inverters are superior to PD SOI inverters. Among several PD SOI inverters, the H-gate SOI inverters have the strongest anti-radiation capability.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN303

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