基于电荷俘获-释放机制的电路PBTI老化建模
发布时间：2018-08-15 13:49
【摘要】：针对传统反应扩散(reaction-diffusion,R-D)机制不适合纳米互补金属氧化物半导体(complementary metal oxide semiconductor,CMOS)集成电路正偏置温度不稳定性(positive bias temperature instability,PBTI)老化效应分析的问题,文章采用电荷俘获-释放(trapping-detrapping,T-D)机制,结合线性分析和数据拟合方法,建立了N型金属氧化物半导体(negative channel metal oxide semiconductor,NMOS)管PBTI效应引起的基本逻辑门单元的时延退化预测模型。仿真实验结果表明,采用该模型的电路PBTI老化预测结果与HSpice软件仿真得到的时延预测结果相比,平均误差为2%;关键路径时序余量评估实验表明,与基于R-D机制的老化时延模型相比,在相同的电路生命周期要求下,该模型需要的时序余量更小。
[Abstract]:Aiming at the problem that the traditional reaction-diffusion (R-D) mechanism is not suitable for the analysis of the aging effect of (complementary metal oxide semiconductor semiconductors in nanoscale complementary metal oxide semiconductors, the trapping-release mechanism is used in this paper. Based on linear analysis and data fitting method, a prediction model of delay degradation of basic logic gate cells caused by the PBTI effect of N-type metal oxide semiconductor (negative channel metal oxide semiconductors is established. The simulation results show that compared with the results of HSpice software, the average error of the PBTI aging prediction results of the circuit using this model is 2, and the critical path time series allowance evaluation experiment shows that, Compared with the aging delay model based on R-D mechanism, the model requires less time series margin under the same circuit life cycle requirements.
【作者单位】： 江苏商贸职业学院艺术与电子信息学院;合肥工业大学电子科学与应用物理学院;
【基金】：国家自然科学基金资助项目(61371025;61274036;61300212;61306049) 南通市应用基础研究科技计划资助项目(GY12015037)
【分类号】：TN407
，
本文编号：2184390
[Abstract]:Aiming at the problem that the traditional reaction-diffusion (R-D) mechanism is not suitable for the analysis of the aging effect of (complementary metal oxide semiconductor semiconductors in nanoscale complementary metal oxide semiconductors, the trapping-release mechanism is used in this paper. Based on linear analysis and data fitting method, a prediction model of delay degradation of basic logic gate cells caused by the PBTI effect of N-type metal oxide semiconductor (negative channel metal oxide semiconductors is established. The simulation results show that compared with the results of HSpice software, the average error of the PBTI aging prediction results of the circuit using this model is 2, and the critical path time series allowance evaluation experiment shows that, Compared with the aging delay model based on R-D mechanism, the model requires less time series margin under the same circuit life cycle requirements.
【作者单位】： 江苏商贸职业学院艺术与电子信息学院;合肥工业大学电子科学与应用物理学院;
【基金】：国家自然科学基金资助项目(61371025;61274036;61300212;61306049) 南通市应用基础研究科技计划资助项目(GY12015037)
【分类号】：TN407
，
本文编号：2184390
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