抛光压力与表面活性剂对铜CMP均匀性的影响

发布时间：2018-08-19 18:50

【摘要】：研究了铜化学机械抛光(CMP)过程中,不同压力和非离子型表面活性剂对片内非均匀性(WIWNU)的影响。通过改变抛光压力大小和非离子型表面活性剂浓度,得出WIWNU的变化规律。实验表明,在不同抛光压力下,铜去除速率有明显的变化。当抛光压力为0 psi(1 psi=6.89×103Pa)时,去除速率呈中间高边缘低。当压力为0.5 psi时,边缘处去除速率较高,且随着压力的增大,晶圆边缘处去除速率与晶圆中心处去除速率差将更明显,导致片内非一致性增大。通过添加非离子型表面活性剂,可以改善WIWNU。当压力为1.5 psi时,非离子型表面活性剂体积分数为5%,WIWNU可降低到3.01%,并且得到良好的平坦化结果。同时,非离子型表面活性剂对晶圆表面残留颗粒具有良好的去除作用。
[Abstract]:The effects of different pressures and Nonionic surfactants on the in-chip nonuniformity of (WIWNU) in copper chemical-mechanical polishing (CMP) process were studied. By changing the polishing pressure and the concentration of Nonionic surfactants, the variation of WIWNU was obtained. The experiment shows that the copper removal rate has obvious change under different polishing pressure. When the polishing pressure is 0 psi (1 psi=6.89 脳 103Pa), the removal rate is high and low. When the pressure is 0.5 psi, the removal rate at the edge is higher, and with the increase of the pressure, the difference between the removal rate at the edge of the wafer and the removal rate at the center of the wafer will be more obvious, resulting in the increase of the inconsistency in the wafer. WIWNU can be improved by adding Nonionic surfactants. When the pressure is 1. 5 psi, the volume fraction of Nonionic surfactant can be reduced to 3. 01 with a volume fraction of 5% WIWNU, and a good flattening result can be obtained. At the same time, Nonionic surfactants have a good removal effect on the residual particles on the wafer surface.
【作者单位】：河北工业大学电子信息工程学院;河北工业大学天津市电子材料与器件重点实验室;
【基金】：国家中长期科技发展规划重大专项资助项目(2009ZX02308) 天津市自然科学基金资助项目(16JCYBJC16100) 河北省自然科学基金资助项目(E2013202247)
【分类号】：TN305.2

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