典型集成电路的电磁干扰效应研究

发布时间：2018-08-20 18:55

【摘要】：随着电子电路的高速发展,集成电路由于其具有体积小、重量轻、功耗小、特性好、高密度集成等许多分立元件电路无法比拟的优点,在各类电路设计中得到了越来越广泛的运用。众所周知,我们的空间电磁环境日益复杂,集成电路器件越来越多的受到外界电磁的干扰。因此,集成电路在实际运用中的抗电磁干扰性成为了研究热点。为研究电磁脉冲对典型集成电路器件的电磁干扰问题与典型集成电路器件对电磁脉冲的损伤效应问题,论文运用实验方法研究了典型集成电路器件在强电磁脉冲注入下的击穿损伤效应,运用仿真方法研究了电磁波辐射情况下的集成电路的敏感性问题。首先,介绍了几种常见的电磁脉冲以及它们各自的特点,分析并总结了集成电路的电磁损伤机理,然后选取目前运用较为广泛的两种典型集成电路器件,在其源-地端、正向输入-地端、负向输入-地端分别注入雷击浪涌脉冲,测试集成电路器件在三个不同的测试参数：脉冲电压幅值、脉冲连续注入个数、脉冲注入间隔时间下是否发生击穿,当击穿发生时,记录此刻的测试参数和器件输出端瞬时的电压波形。然后,计算在一定注入电压幅值下器件的损伤概率。为了节省计算耗时,在计算部分输入脉冲电压的损伤概率后,运用BP神经网络对其余输入脉冲电压的损伤概率进行预测。然后,对所有数据进行分析处理,得到各端对的损伤阈值电压、集成电路器件的最敏感端对,运用Matlab编程,得到器件损伤情况与三个不同测试参数之间的关系曲线、器件损伤概率与电压之间的关系曲线与函数表达式。最后,研究电磁波对集成电路器件辐射干扰的情况,由于集成电路大多被置于一个屏蔽腔体内,而屏蔽腔体出于散热、通风等原因,均需要在屏蔽腔体内设计孔缝。这样,就把问题转化为带缝屏蔽腔体内集成电路的电磁辐射干扰研究。论文首先建立了电磁波辐照内置集成电路的带缝屏蔽腔体的模型,并提出了一种场路结合,对带缝屏蔽腔体内集成电路器件电磁干扰仿真分析的新方法。该方法采用小孔耦合理论处理电磁波与屏蔽层孔缝耦合的关系,求解孔缝处的耦合电压,即为等效的干扰源。在Pspice软件中,建立集成电路的模型,将等效的干扰源作为集成电路的输入,求得电路输出端的电压响应,即由电磁辐射引起的干扰电压。
[Abstract]:With the rapid development of electronic circuits, integrated circuits have many advantages, such as small volume, light weight, low power consumption, good characteristics, high density integration and so on. In all kinds of circuit design has been more and more widely used. As we all know, our space electromagnetic environment is becoming more and more complex, integrated circuit devices are more and more subject to external electromagnetic interference. Therefore, the electromagnetic interference resistance of integrated circuits in practical application has become a research hotspot. In order to study the electromagnetic interference problem of typical integrated circuit devices caused by electromagnetic pulse and the damage effect of typical integrated circuit device to electromagnetic pulse, In this paper, the breakdown damage effect of typical integrated circuit devices under strong electromagnetic pulse injection is studied by means of experiments, and the sensitivity of integrated circuits under electromagnetic wave radiation is studied by simulation method. Firstly, several kinds of common electromagnetic pulses and their respective characteristics are introduced, and the electromagnetic damage mechanism of integrated circuits is analyzed and summarized. Then two typical integrated circuit devices, which are widely used at present, are selected at the source and ground end. The lightning surge pulse was injected into the forward input ground end and the negative input ground end to test three different test parameters of integrated circuit device: pulse voltage amplitude, pulse continuous injection number, whether breakdown occurred at the pulse injection interval. When the breakdown occurs, record the current test parameters and instantaneous voltage waveform at the output end of the device. Then, the damage probability of the device is calculated at a certain injection voltage amplitude. In order to save calculation time, after calculating the damage probability of partial input pulse voltage, BP neural network is used to predict the damage probability of other input pulse voltage. Then, the damage threshold voltage of each end pair and the most sensitive pair of integrated circuit devices are obtained by analyzing and processing all the data. Using Matlab programming, the relationship curve between the damage of the device and three different test parameters is obtained. The relation curve and function expression between the damage probability and voltage of the device. Finally, the interference of electromagnetic wave to integrated circuit devices is studied. Because the integrated circuit is mostly placed in a shielding cavity, the shielding cavity needs to design holes in the shielding cavity for the reasons of heat dissipation, ventilation and so on. In this way, the problem is transformed into the study of electromagnetic radiation interference of integrated circuits with slot shielding cavity. In this paper, the model of electromagnetic wave irradiated cavity with slot shielding is established, and a new method of electromagnetic interference simulation is proposed. In this method, the relationship between electromagnetic wave and aperture coupling in shielding layer is treated by using the theory of small hole coupling, and the coupling voltage at the hole seam is solved, which is the equivalent interference source. In Pspice software, the model of integrated circuit is established, the equivalent interference source is taken as the input of the integrated circuit, and the voltage response of the output end of the circuit is obtained, that is, the interference voltage caused by electromagnetic radiation.
【学位授予单位】：华北电力大学(北京)
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN03;TN40

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