掺铒富硅氧化硅发光器件电致发光衰减机制
发布时间：2018-08-21 19:34
【摘要】：首先采用多靶射频磁控共溅射结合后退火工艺制备了掺Er富硅氧化硅MIS(金属-绝缘体-半导体结构)电致发光器件,然后通过电致发光(EL)以及电流-电压(I-U)特性测量对发光器件的光电性能进行表征.最后,通过对比不同富硅含量的发光器件的载流子输运机制,并通过分析器件中的电荷俘获过程,对富硅氧化硅器件中铒离子电致发光的激发和猝灭机制进行了解释.结果表明:富硅的存在改变了MIS发光器件中的载流子输运过程,造成外加电场下注入的电子能量降低,进而降低Er离子发光中心的激发效率;而富硅引入的缺陷态会引起电荷俘获及俄歇效应,也会使得发光中心发生非辐射复合过程.
[Abstract]:Firstly, er rich silicon oxide MIS (metal-insulator semiconductor structure) electroluminescent devices were fabricated by multi-target RF magnetron co-sputtering and annealing. The photoelectric properties of the devices were characterized by electroluminescent (EL) and current-voltage (I-U) measurements. Finally, the excitation and quenching mechanisms of erbium ion electroluminescence in silicon-rich silicon oxide devices are explained by comparing the carrier transport mechanisms of the devices with different silicon rich contents and analyzing the charge capture process in the devices. The results show that the existence of rich silicon changes the carrier transport process in MIS devices, resulting in the reduction of the electron energy implanted in the external electric field and the reduction of the excitation efficiency of er luminescence centers. The defect state introduced by rich silicon will lead to charge capture and Auger effect, and also make the luminous center occur non-radiative recombination process.
【作者单位】： 河北大学物理科学与技术学院;
【基金】：河北省科技计划项目(13214315) 河北省高校科学技术研究项目(QN20131115) 教育部博士点基金资助项目(20131301120003)
【分类号】：TN383.1
[Abstract]:Firstly, er rich silicon oxide MIS (metal-insulator semiconductor structure) electroluminescent devices were fabricated by multi-target RF magnetron co-sputtering and annealing. The photoelectric properties of the devices were characterized by electroluminescent (EL) and current-voltage (I-U) measurements. Finally, the excitation and quenching mechanisms of erbium ion electroluminescence in silicon-rich silicon oxide devices are explained by comparing the carrier transport mechanisms of the devices with different silicon rich contents and analyzing the charge capture process in the devices. The results show that the existence of rich silicon changes the carrier transport process in MIS devices, resulting in the reduction of the electron energy implanted in the external electric field and the reduction of the excitation efficiency of er luminescence centers. The defect state introduced by rich silicon will lead to charge capture and Auger effect, and also make the luminous center occur non-radiative recombination process.
【作者单位】： 河北大学物理科学与技术学院;
【基金】：河北省科技计划项目(13214315) 河北省高校科学技术研究项目(QN20131115) 教育部博士点基金资助项目(20131301120003)
【分类号】：TN383.1
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