ZnO基透明导电薄膜的湿化学制备
发布时间：2018-08-22 17:35
【摘要】：ZnO原料丰富且无污染,是一种直接带隙宽禁带半导体材料,其禁带宽度为3.37 eV,激子结合能达到60 me V。ZnO薄膜具有优良的光电性能,在太阳能电池、晶体管、发光器件等方面有良好的应用前景。ZnO薄膜的制备方法主要有磁控溅射法等物理气相沉积法、化学气相沉积法以及湿化学法。其中湿化学方法所需设备简单,能够在衬底上实现大面积薄膜制备。在本论文中,我们采用溶胶-凝胶法和化学浴沉积法两种湿化学方法制备ZnO基透明导电薄膜。以X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱分析(XPS)、紫外可见分光光度计、四探针法等分析测试方法对薄膜样品的结构、形貌、化学组成以及光电性能进行表征。本论文的主要内容如下:(1)在查阅相关文献的基础上,对ZnO的基本结构和光电性质进行简单归纳,重点综述了ZnO薄膜的湿化学制备方法。(2)通过溶胶-凝胶法制备了Si掺杂ZnO(ZnO:Si)薄膜,并对其进行紫外光照射和氢气还原处理来提高ZnO:Si薄膜的电导率。ZnO:Si薄膜的最低电阻为1.6 k?/□,透光率在80%以上。(3)采用溶胶-凝胶法制备了CuO及ZnO/Cu O/ZnO薄膜,经氢气还原后获得Cu及ZnO/Cu/ZnO薄膜。Cu膜的电阻为10?/□,但ZnO/Cu/ZnO多层膜的电阻较高,为10 k?/□。这是由于Cu在ZnO中的浸润性较差,在多层膜中形成了岛状分散的Cu晶粒。(4)我们采用化学浴沉积法制备了In掺杂ZnO(ZnO:In)薄膜。通过改变溶剂组成,实现了薄膜择优取向从[002]晶向到[100]和[110]晶向的可控调节。同时系统探讨了沉积时间、前驱体浓度、水浴温度等对ZnO:In薄膜织构的影响。研究表明,ZnO:In薄膜的择优取向与其最快生长晶向一致。
[Abstract]:ZnO is a kind of semiconductor material with direct band gap and wide band gap. Its band gap width is 3.37 eV and exciton binding energy is 60 me V. ZnO thin film has excellent photoelectric properties. It has good application prospects in solar cells, transistors, light-emitting devices and other fields. The preparation methods of ZnO thin films mainly include magnetron sputtering and other physical methods. Vapor deposition, chemical vapor deposition, and wet chemical methods. Wet chemical methods require simple equipment and can be used to prepare large-area thin films on substrates. In this paper, we used two wet chemical methods, sol-gel method and chemical bath deposition method, to prepare ZnO-based transparent conductive thin films. X-ray diffraction (XRD), scanning electron microscopy (SEM) Microscope (SEM), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectrophotometer, four-probe method and other analytical methods were used to characterize the structure, morphology, chemical composition and photoelectric properties of the thin films. The main contents of this paper are as follows: (1) On the basis of consulting relevant literatures, the basic structure and photoelectric properties of ZnO were simply classified. (2) Si-doped ZnO (ZnO: Si) thin films were prepared by sol-gel method, and the conductivity of ZnO: Si thin films was improved by ultraviolet irradiation and hydrogen reduction. The minimum resistance of ZnO: Si thin films was 1.6 k?/, and the transmittance was above 80%. (3) CuO thin films were prepared by sol-gel method. Cu and ZnO/Cu/ZnO films were obtained by hydrogen reduction. The resistance of Cu films was 10?/, but that of ZnO/Cu/ZnO multilayers was 10 k?/. This was due to the poor wettability of Cu in ZnO, and the island-like dispersed Cu grains were formed in the multilayers. (4) In-doped ZnO (ZnO: In) thin films were prepared by chemical bath deposition. The effect of deposition time, precursor concentration and water bath temperature on the texture of ZnO:In films was investigated systematically. The results show that the preferred orientation of ZnO:In films is consistent with its fastest growing orientation.
【学位授予单位】：江苏大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN304.05
[Abstract]:ZnO is a kind of semiconductor material with direct band gap and wide band gap. Its band gap width is 3.37 eV and exciton binding energy is 60 me V. ZnO thin film has excellent photoelectric properties. It has good application prospects in solar cells, transistors, light-emitting devices and other fields. The preparation methods of ZnO thin films mainly include magnetron sputtering and other physical methods. Vapor deposition, chemical vapor deposition, and wet chemical methods. Wet chemical methods require simple equipment and can be used to prepare large-area thin films on substrates. In this paper, we used two wet chemical methods, sol-gel method and chemical bath deposition method, to prepare ZnO-based transparent conductive thin films. X-ray diffraction (XRD), scanning electron microscopy (SEM) Microscope (SEM), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectrophotometer, four-probe method and other analytical methods were used to characterize the structure, morphology, chemical composition and photoelectric properties of the thin films. The main contents of this paper are as follows: (1) On the basis of consulting relevant literatures, the basic structure and photoelectric properties of ZnO were simply classified. (2) Si-doped ZnO (ZnO: Si) thin films were prepared by sol-gel method, and the conductivity of ZnO: Si thin films was improved by ultraviolet irradiation and hydrogen reduction. The minimum resistance of ZnO: Si thin films was 1.6 k?/, and the transmittance was above 80%. (3) CuO thin films were prepared by sol-gel method. Cu and ZnO/Cu/ZnO films were obtained by hydrogen reduction. The resistance of Cu films was 10?/, but that of ZnO/Cu/ZnO multilayers was 10 k?/. This was due to the poor wettability of Cu in ZnO, and the island-like dispersed Cu grains were formed in the multilayers. (4) In-doped ZnO (ZnO: In) thin films were prepared by chemical bath deposition. The effect of deposition time, precursor concentration and water bath temperature on the texture of ZnO:In films was investigated systematically. The results show that the preferred orientation of ZnO:In films is consistent with its fastest growing orientation.
【学位授予单位】：江苏大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN304.05
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