太赫兹InP HEMT单片低噪声放大器研究
发布时间：2018-08-23 15:58
【摘要】：磷化铟高电子迁移率晶体管(InP HEMT)具有高电子迁移率、优良的噪声性能和良好的抗辐射特性等优点,非常适合制作低噪声放大器,现在已经逐步发展为MMIC甚至TMIC领域中一个非常有竞争力的技术。本文做了如下工作:1、介绍了太赫兹单片低噪声放大器的最新进展,简要分析了InP HEMT的器件特性以及相关工艺,并对在片测试技术进行了简要的介绍,包括几种常用的二端口校准技术以及二端口去嵌技术。根据器件在片测试结果,建立小信号等效电路模型以及噪声等效电路模型,设计了一款太赫兹单片低噪声放大器。设计过程包括电路拓扑结构的选取,偏置电路和匹配电路的设计,电路的仿真与优化,最后在版图调整规则下确定了电路版图。2、利用国内自主研发的0.1μm InP HEMT工艺对太赫兹单片低噪声放大器进行了流片、测试及结果分析。在Vd=1.7V,Vg=0V偏置条件下,低噪声放大器小信号增益在101.3~106.1GHz内大于5dB,在104GHz处达到最大增益7.007dB,输入、输出回波损耗优于-5dB。虽然电路实测结果与设计指标有一定的差距,但在太赫兹InP HEMT单片低噪声放大器研究方面利用自主工艺技术做了突破性的尝试。本课题的研究对于提高我国在太赫兹技术领域的整体水平,缩小与国外领先水平的差距,打破发达国家对我国的技术封锁具有重要的现实意义。
[Abstract]:Indium phosphide high electron mobility transistor (InP HEMT) has the advantages of high electron mobility, excellent noise performance and good radiation resistance, so it is very suitable for making low noise amplifiers. Now it has gradually developed into a very competitive technology in the field of MMIC and even TMIC. This paper introduces the latest progress of terahertz monolithic low noise amplifier (LNA), briefly analyzes the device characteristics and related processes of InP HEMT, and briefly introduces the on-chip testing technology. It includes several commonly used two-port calibration techniques and two-port deembedding techniques. According to the in-chip test results, the small signal equivalent circuit model and the noise equivalent circuit model are established, and a terahertz monolithic low noise amplifier is designed. The design process includes the selection of circuit topology, the design of bias circuit and matching circuit, the simulation and optimization of circuit. Finally, the circuit layout. 2 is determined under the layout adjustment rule. THz monolithic low noise amplifier (LNA) is fabricated by using the 0. 1 渭 m InP HEMT process developed in China, and the results are tested and analyzed. Under the VDX 1.7V VGG 0V bias condition, the small signal gain of the LNA is greater than 5 dB in 101.3~106.1GHz, and the maximum gain is 7.007 dB at 104GHz. The input and output echo loss is better than -5 dB. Although there is a certain gap between the measured results of the circuit and the design index, a breakthrough attempt has been made in the research of terahertz InP HEMT monolithic low noise amplifier using the independent process technology. The research of this subject has important practical significance to improve the whole level of our country in the field of terahertz technology, narrow the gap with the leading level of foreign countries, and break the technology blockade of developed countries to our country.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.3
，
本文编号：2199563
[Abstract]:Indium phosphide high electron mobility transistor (InP HEMT) has the advantages of high electron mobility, excellent noise performance and good radiation resistance, so it is very suitable for making low noise amplifiers. Now it has gradually developed into a very competitive technology in the field of MMIC and even TMIC. This paper introduces the latest progress of terahertz monolithic low noise amplifier (LNA), briefly analyzes the device characteristics and related processes of InP HEMT, and briefly introduces the on-chip testing technology. It includes several commonly used two-port calibration techniques and two-port deembedding techniques. According to the in-chip test results, the small signal equivalent circuit model and the noise equivalent circuit model are established, and a terahertz monolithic low noise amplifier is designed. The design process includes the selection of circuit topology, the design of bias circuit and matching circuit, the simulation and optimization of circuit. Finally, the circuit layout. 2 is determined under the layout adjustment rule. THz monolithic low noise amplifier (LNA) is fabricated by using the 0. 1 渭 m InP HEMT process developed in China, and the results are tested and analyzed. Under the VDX 1.7V VGG 0V bias condition, the small signal gain of the LNA is greater than 5 dB in 101.3~106.1GHz, and the maximum gain is 7.007 dB at 104GHz. The input and output echo loss is better than -5 dB. Although there is a certain gap between the measured results of the circuit and the design index, a breakthrough attempt has been made in the research of terahertz InP HEMT monolithic low noise amplifier using the independent process technology. The research of this subject has important practical significance to improve the whole level of our country in the field of terahertz technology, narrow the gap with the leading level of foreign countries, and break the technology blockade of developed countries to our country.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.3
，
本文编号：2199563
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