采用双栅MOS结构的抗总剂量关键技术研究
发布时间：2018-08-24 14:10
【摘要】：随着航空航天技术与核技术的不断发展,越来越多精密的电子设备需要在辐照环境中使用,这些设备中包含的集成电路模块在受到辐照影响后,电路的性能会发生退化甚至功能丧失。为了保证电子设备能够在各种辐照环境中正常工作,对抗辐照的研究变得越来越重要。本文以提高厚栅NMOS晶体管的抗总剂量辐照效应的性能作为出发点进行研究。具体研究了双栅MOS结构对厚栅NMOS晶体管抗总剂量辐照效应的性能提升。接着为双栅MOS结构提出了三种可行的分压结构。然后对三种分压结构的性能进行了研究。最后对文中涉及的几种电路进行了版图设计并制定了详尽的辐照实验和测试方案。本文探讨了总剂量辐照效应的基本原理,并对总剂量辐照效应对MOS晶体管的电学性能影响做了较为详尽地阐述。本文对总剂量辐照效应模型的建立进行了研究分析,并利用Sentaurus TCAD软件构建了厚栅NMOS晶体管、薄栅NMOS晶体管和双栅NMOS晶体管的3D模型并进行了总剂量辐照效应的仿真。研究发现双栅MOS结构可以提升厚栅NMOS晶体管抗总剂量辐照效应的能力。本文首先针对双栅MOS结构提出了三种分压结构,分别为电阻分压结构、二极管分压结构和PMOS分压结构。然后通过Cadence软件对三种分压结构及其构成的反相器性能进行了研究。最后还通过对仿真模型的修改来模拟MOS器件受到总剂量辐照效应影响之后的变化,并用修改之后的模型对电路的性能进行了仿真。研究发现,当电路受到总剂量辐照效应影响时,采用二极管分压结构的双栅MOS反相器对其开关阈值漂移控制最好,采用PMOS分压结构的双栅MOS反相器的传播延时增长量最少。本文对普通CMOS缓冲器和三种分别采用了不同分压结构的双栅MOS缓冲器进行了版图设计,在对版图进行了DRC和LVS检查之后交由代工厂流。并为后续的总剂量辐照实验及电路性能测试制定了详尽的方案。
[Abstract]:With the continuous development of aerospace technology and nuclear technology, more and more sophisticated electronic devices need to be used in irradiated environment. The performance of the circuit will deteriorate or even lose its function. In order to ensure that electronic devices can work properly in various irradiation environments, the research of anti-irradiation has become more and more important. The purpose of this paper is to improve the performance of thick gate NMOS transistors against total dose radiation. The effect of double gate MOS structure on the total dose radiation resistance of thick gate NMOS transistors is studied in detail. Then three feasible partial voltage structures are proposed for double gate MOS structures. Then, the performance of three kinds of partial pressure structures is studied. Finally, the layout of several circuits involved in the paper is designed and detailed irradiation experiments and test schemes are worked out. In this paper, the basic principle of total dose radiation effect is discussed, and the effect of total dose irradiation effect on the electrical properties of MOS transistor is described in detail. In this paper, the model of total dose irradiation effect is studied and analyzed, and 3D models of thick gate NMOS transistor, thin gate NMOS transistor and double gate NMOS transistor are constructed by using Sentaurus TCAD software and the total dose irradiation effect is simulated. It is found that the double gate MOS structure can enhance the ability of thick gate NMOS transistors to resist total dose radiation effects. In this paper, three voltage divider structures are proposed for double-gate MOS structures, which are resistive divider structure, diode divide-voltage structure and PMOS divide-voltage structure. Then, the performance of three voltage divider structures and their phase inverters are studied by Cadence software. Finally, the simulation model is modified to simulate the change of MOS device after the total dose radiation effect, and the performance of the circuit is simulated by the modified model. It is found that the double gate MOS inverter with diode divider structure has the best threshold drift control when the circuit is affected by the total dose radiation effect, and the double gate MOS inverter with PMOS divider structure has the least propagation delay growth. In this paper, the layout of ordinary CMOS buffers and three kinds of double-gate MOS buffers with different divide-voltage structures are designed. After the layout is checked by DRC and LVS, the layout is transferred to the proxy factory. A detailed scheme for the subsequent total dose irradiation experiment and circuit performance test is proposed.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386
本文编号：2201066
[Abstract]:With the continuous development of aerospace technology and nuclear technology, more and more sophisticated electronic devices need to be used in irradiated environment. The performance of the circuit will deteriorate or even lose its function. In order to ensure that electronic devices can work properly in various irradiation environments, the research of anti-irradiation has become more and more important. The purpose of this paper is to improve the performance of thick gate NMOS transistors against total dose radiation. The effect of double gate MOS structure on the total dose radiation resistance of thick gate NMOS transistors is studied in detail. Then three feasible partial voltage structures are proposed for double gate MOS structures. Then, the performance of three kinds of partial pressure structures is studied. Finally, the layout of several circuits involved in the paper is designed and detailed irradiation experiments and test schemes are worked out. In this paper, the basic principle of total dose radiation effect is discussed, and the effect of total dose irradiation effect on the electrical properties of MOS transistor is described in detail. In this paper, the model of total dose irradiation effect is studied and analyzed, and 3D models of thick gate NMOS transistor, thin gate NMOS transistor and double gate NMOS transistor are constructed by using Sentaurus TCAD software and the total dose irradiation effect is simulated. It is found that the double gate MOS structure can enhance the ability of thick gate NMOS transistors to resist total dose radiation effects. In this paper, three voltage divider structures are proposed for double-gate MOS structures, which are resistive divider structure, diode divide-voltage structure and PMOS divide-voltage structure. Then, the performance of three voltage divider structures and their phase inverters are studied by Cadence software. Finally, the simulation model is modified to simulate the change of MOS device after the total dose radiation effect, and the performance of the circuit is simulated by the modified model. It is found that the double gate MOS inverter with diode divider structure has the best threshold drift control when the circuit is affected by the total dose radiation effect, and the double gate MOS inverter with PMOS divider structure has the least propagation delay growth. In this paper, the layout of ordinary CMOS buffers and three kinds of double-gate MOS buffers with different divide-voltage structures are designed. After the layout is checked by DRC and LVS, the layout is transferred to the proxy factory. A detailed scheme for the subsequent total dose irradiation experiment and circuit performance test is proposed.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386
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