生物芯片基底材料纳米硅薄膜超快动力学研究
发布时间：2018-08-26 13:21
【摘要】：生物芯片技术的日益兴起,使得生命科学领域大量的、复杂的数据采集和处理分析工作可以实现集成化、微型化、连续化。而生物芯片制作的一个关键环节就是芯片基底材料的选取与合理利用,生物芯片本身的特点要求我们对所使用材料的极微小尺度、超快物理过程有更为透彻的理解。本文主要针对可以作为生物芯片基底材料的纳米硅薄膜超快动力学特性进行研究。为了对纳米硅薄膜超快动力学特性的分析进行对比和铺垫,本文也进行了金属铜薄膜的超快动力学分析。主要研究内容如下：(1)使用磁控溅射法制备出纳米铜薄膜和纳米硅薄膜；(2)使用飞秒激光瞬态反射技术,测量纳米铜薄膜和纳米硅薄膜的瞬态反射规律,得出不同脉冲激光强度作用下的瞬态反射率变化数据,并通过反射率变化规律分析其内部的超快载流子输运过程和超快热输运过程微观机制；(3)通过对受激载流子浓度定量的计算,分析纳米硅薄膜载流子输运过程对瞬态反射率的贡献；建立扩散模型模拟纳米硅薄膜载流子浓度衰减过程,通过模型计算出表面复合速率为S=4×105cm/s,体复合时间随着泵浦光能量的增强而缩短。(4)使用双温模型模拟铜薄膜的超快热输运过程,经过计算得出铜薄膜电声耦合系数为G=1.2×1016W/m3K；在掌握了金属双温模型的基础上,建立了可以用于分析半导体超快载流子输运过程和超快热输运过程的双温模型。
[Abstract]:With the increasing development of biochip technology, a large number of complex data acquisition and analysis work in the field of life science can be integrated, miniaturized and continuous. The selection and rational use of substrate materials is a key step in the fabrication of biochips. The characteristics of biochips require us to have a more thorough understanding of the very small scale and ultrafast physical process of the materials used. In this paper, the ultrafast kinetic characteristics of nanocrystalline silicon films which can be used as biochip substrates are studied. In order to compare the ultrafast kinetic characteristics of nanocrystalline silicon thin films and pave the way, the ultrafast kinetic analysis of copper thin films was also carried out in this paper. The main contents are as follows: (1) nanocrystalline copper thin films and nanocrystalline silicon thin films were prepared by magnetron sputtering; (2) transient reflection patterns of nanocrystalline copper and silicon thin films were measured by femtosecond laser transient reflection technique. The transient reflectivity data of different pulse laser intensity are obtained, and the microscopic mechanism of ultra-fast carrier transport and ultra-fast thermal transport is analyzed through the reflectivity variation law. (3) through quantitative calculation of stimulated carrier concentration, the contribution of carrier transport process to transient reflectivity is analyzed, and a diffusion model is established to simulate the carrier concentration attenuation process of nanocrystalline silicon thin films. The surface recombination rate is calculated to be 4 脳 10 ~ 5 cm / s, and the volume recombination time is shortened with the increase of pump energy. (4) the ultra-fast thermal transport process of copper thin films is simulated by using the dual-temperature model. The electroacoustic coupling coefficient of copper thin films is calculated to be 1.2 脳 10 ~ (16) W / m ~ (3K); Based on the metal double temperature model, a double temperature model is established for the analysis of semiconductor ultrafast carrier transport process and ultra fast heat transport process.
【学位授予单位】：东北林业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN401;Q81
本文编号：2204985
[Abstract]:With the increasing development of biochip technology, a large number of complex data acquisition and analysis work in the field of life science can be integrated, miniaturized and continuous. The selection and rational use of substrate materials is a key step in the fabrication of biochips. The characteristics of biochips require us to have a more thorough understanding of the very small scale and ultrafast physical process of the materials used. In this paper, the ultrafast kinetic characteristics of nanocrystalline silicon films which can be used as biochip substrates are studied. In order to compare the ultrafast kinetic characteristics of nanocrystalline silicon thin films and pave the way, the ultrafast kinetic analysis of copper thin films was also carried out in this paper. The main contents are as follows: (1) nanocrystalline copper thin films and nanocrystalline silicon thin films were prepared by magnetron sputtering; (2) transient reflection patterns of nanocrystalline copper and silicon thin films were measured by femtosecond laser transient reflection technique. The transient reflectivity data of different pulse laser intensity are obtained, and the microscopic mechanism of ultra-fast carrier transport and ultra-fast thermal transport is analyzed through the reflectivity variation law. (3) through quantitative calculation of stimulated carrier concentration, the contribution of carrier transport process to transient reflectivity is analyzed, and a diffusion model is established to simulate the carrier concentration attenuation process of nanocrystalline silicon thin films. The surface recombination rate is calculated to be 4 脳 10 ~ 5 cm / s, and the volume recombination time is shortened with the increase of pump energy. (4) the ultra-fast thermal transport process of copper thin films is simulated by using the dual-temperature model. The electroacoustic coupling coefficient of copper thin films is calculated to be 1.2 脳 10 ~ (16) W / m ~ (3K); Based on the metal double temperature model, a double temperature model is established for the analysis of semiconductor ultrafast carrier transport process and ultra fast heat transport process.
【学位授予单位】：东北林业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN401;Q81
【参考文献】
相关期刊论文 前2条
1 马维刚;王海东;张兴;过增元;;铜薄膜电子-声子耦合系数的实验研究[J];工程热物理学报;2010年03期
2 金钻明;马红;李栋;马国宏;;抽运-探测反射技术研究本征CdTe的载流子动力学[J];光学学报;2009年08期
相关会议论文 前1条
1 徐爽;郭雅芳;;纳米铜薄膜尺度效应的分子动力学研究[A];北京力学会第15届学术年会论文摘要集[C];2009年
相关博士学位论文 前1条
1 黄仕华;半导体中超快动力学过程的研究[D];复旦大学;2004年
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