SiC发光特性及其调控研究进展
发布时间：2018-08-29 09:32
【摘要】：碳化硅(SiC)作为第三代半导体的代表材料,具有禁带宽度大、热导率高和临界击穿电场高等特点,所制备的光电器件在高温、强辐射等极端、恶劣条件下有巨大的应用潜力。本文综述了国内外SiC发光性质的研究现状,介绍SiC发光的实际应用,阐述了单晶、纳米晶和薄膜不同形态SiC的制备方法及发光特点,并对SiC发光调控的研究进展进行了探讨与展望。利用新兴技术手段,可实现对SiC发光光谱和发光效率等性质的调控。
[Abstract]:As the representative material of the third generation semiconductor, silicon carbide (SiC) has the characteristics of wide band gap, high thermal conductivity and high critical breakdown electric field. The photovoltaic devices prepared have great application potential under extreme and bad conditions such as high temperature, strong radiation and so on. In this paper, the research status of SiC luminescence properties at home and abroad is reviewed, and the practical applications of SiC luminescence are introduced. The preparation methods and luminescence characteristics of SiC with different morphology of single crystal, nanocrystalline and thin film are described. The research progress of SiC luminescence regulation is also discussed and prospected. The luminescence spectrum and luminous efficiency of SiC can be regulated by new technology.
【作者单位】： 北京工业大学激光工程研究院;北京工业大学材料科学与工程学院;
【基金】：国家自然科学基金(50875006) 北京市教委重点项目(KZ201310005005)
【分类号】：TN304.24
本文编号：2210802
[Abstract]:As the representative material of the third generation semiconductor, silicon carbide (SiC) has the characteristics of wide band gap, high thermal conductivity and high critical breakdown electric field. The photovoltaic devices prepared have great application potential under extreme and bad conditions such as high temperature, strong radiation and so on. In this paper, the research status of SiC luminescence properties at home and abroad is reviewed, and the practical applications of SiC luminescence are introduced. The preparation methods and luminescence characteristics of SiC with different morphology of single crystal, nanocrystalline and thin film are described. The research progress of SiC luminescence regulation is also discussed and prospected. The luminescence spectrum and luminous efficiency of SiC can be regulated by new technology.
【作者单位】： 北京工业大学激光工程研究院;北京工业大学材料科学与工程学院;
【基金】：国家自然科学基金(50875006) 北京市教委重点项目(KZ201310005005)
【分类号】：TN304.24
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，本文编号：2210802
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