源漏区域孔阵列挖槽对氮化镓n型欧姆接触的影响
发布时间：2018-08-30 10:54
【摘要】：采用源漏区域孔阵列挖槽的方法降低氮化镓n型欧姆接触的合金温度,并改善合金后金属形貌。相对于非源漏区域孔阵列挖槽的氮化镓n型欧姆接触合金,合金温度可降低40℃,合金后源漏金属形貌尤其是金属侧边形貌显著改善,这对于提高相关器件及电路性能、成品率及可靠性很有好处。
[Abstract]:The temperature of n-type ohmic contact of gallium nitride was reduced and the metal morphology was improved by the method of hole array in source and drain area. Compared with n-type gallium nitride ohmic contact alloy with non-source drain area hole array, the alloy temperature can be reduced by 40 鈩，
本文编号：2212855
[Abstract]:The temperature of n-type ohmic contact of gallium nitride was reduced and the metal morphology was improved by the method of hole array in source and drain area. Compared with n-type gallium nitride ohmic contact alloy with non-source drain area hole array, the alloy temperature can be reduced by 40 鈩，
本文编号：2212855
本文链接：https://www.wllwen.com/kejilunwen/dianzigongchenglunwen/2212855.html
