石墨烯场效应晶体管微波建模技术研究
发布时间：2018-09-01 11:03
【摘要】：以硅材料为核心的传统元器件日益趋近物理极限,越来越难以满足电子系统小型化、高性能的需求。石墨烯作为一种新型电子材料,以其优异的电性能、热性能和应力性能引起国内外研究者的广泛关注,有望成为下一代半导体器件的核心电子材料之一。以石墨烯为导电层的场效应晶体管作为一种新型纳米器件,能够满足高性能与小型化结构的要求,成为目前电子器件的研究热点。准确建立器件模型,对于微波和射频电路的设计至关重要。本文针对石墨烯场效应晶体管器件模型展开研究,建立了等效电路模型并进行参数提取。介绍了石墨烯场效应晶体管的基本结构,分析了其工作原理和电学特性。根据石墨烯场效应晶体管的双极性输运的性质,分析了其输出特性、开关比、饱和性能。作为对器件工艺的反馈,建立了小信号等效电路模型,包括石墨烯场效应晶体管的等效电路模型参数的初值测试提取方法,以及S参数优化方法。在小信号模型的基础上,论文对比了MOSFET、HEMT与石墨烯场效应晶体管的异同,对Angelov非线性模型进行了简化与改进,提出了电流-电压,栅源、栅漏电容非线性表达式,建立了石墨烯场效应晶体管射频大信号模型。并将完整的模型嵌入电路仿真软件,进行电路参数仿真,与晶体管的实测数据对比显示,本文建立的模型具有较好的准确度和实用性。
[Abstract]:As a new type of electronic material, graphene, with its excellent electrical, thermal and stress properties, has attracted wide attention of researchers at home and abroad, and is expected to become the core of the next generation semiconductor devices. As a new type of nano-device, field effect transistor with graphene as conductive layer can satisfy the requirements of high performance and miniaturization structure, which has become a hot spot in the research of electronic devices. The basic structure of graphene field effect transistor is introduced, its working principle and electrical characteristics are analyzed. According to the bipolar transport properties of graphene field effect transistor, its output characteristics, switching ratio and saturation performance are analyzed. Based on the feedback, a small signal equivalent circuit model is established, including the initial value test and extraction method of the equivalent circuit model parameters of graphene field effect transistor, and the S parameter optimization method.On the basis of small signal model, the similarities and differences of MOSFET, HEMT and graphene field effect transistor are compared, and the Angelov nonlinear model is simplified. With the improvement, the non-linear expressions of current-voltage, gate source and gate-drain capacitance are presented, and the RF large-signal model of graphene FET is established.
【学位授予单位】：合肥工业大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386
本文编号：2216996
[Abstract]:As a new type of electronic material, graphene, with its excellent electrical, thermal and stress properties, has attracted wide attention of researchers at home and abroad, and is expected to become the core of the next generation semiconductor devices. As a new type of nano-device, field effect transistor with graphene as conductive layer can satisfy the requirements of high performance and miniaturization structure, which has become a hot spot in the research of electronic devices. The basic structure of graphene field effect transistor is introduced, its working principle and electrical characteristics are analyzed. According to the bipolar transport properties of graphene field effect transistor, its output characteristics, switching ratio and saturation performance are analyzed. Based on the feedback, a small signal equivalent circuit model is established, including the initial value test and extraction method of the equivalent circuit model parameters of graphene field effect transistor, and the S parameter optimization method.On the basis of small signal model, the similarities and differences of MOSFET, HEMT and graphene field effect transistor are compared, and the Angelov nonlinear model is simplified. With the improvement, the non-linear expressions of current-voltage, gate source and gate-drain capacitance are presented, and the RF large-signal model of graphene FET is established.
【学位授予单位】：合肥工业大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386
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