抗辐照SOI MOSFET模型研究

发布时间：2018-09-02 06:00

【摘要】：与传统体硅相比,SOI材料集成度高、抗辐照能力强、功耗低,速度快、适用于小尺寸器件,能够克服体硅材料的不足,最大程度的发挥硅集成电路存在的潜力,在抗辐照电路,深亚微米器件,三维集成电路和高温电子学等领域得到了广泛的应用。SOI CMOS器件普遍应用于航天系统,核电设备电子,军事工程等特殊领域。辐射环境产生的辐照效应会造成电子元器件及集成电路的性能退化,出现逻辑错误或永久性损伤,严重影响电子系统的稳定性与可靠性,甚至完全失效,因此如何提高SOI器件的抗辐照性能成为近年来国内外普遍研究的重点。本文对SOI CMOS器件在辐照环境下的各种物理机制,模型与模型参数进行深入研究,分析总剂量辐照效应对微电子器件性能的退化,研究SOI CMOS的抗辐照模型。论文的主要工作如下:1、详细阐述辐照环境与SOI MOSFET器件基本物理特性,通过分析SOI MOSFET器件的总剂量辐射效应和现有的抗辐照技术,深入探讨SOI CMOS器件电学特性退化机制如阈值电压漂移、亚阈值斜率变化(泄漏电流增大)等,为后续抗总剂量辐射SOI MOSFET结构提出奠定基础。2、详细阐述SOI MOSFET器件的抗总剂量辐照特性,从电路仿真的器件模型出发,熟悉BiCMOS器件建模流程,顺利完成SOI MOSFET抗辐照模型的建立,为器件抗辐照工艺与电路设计之间的连接提供桥梁。本文深入研究SOI器件的抗辐照特性,并在BSIM3SOI的Verilog-A模型基础上顺利完成了0.8??m SOI CMOS SPICE模型参数的提取和验证工作,提出抗辐照加固模型,为电路设计提供精度更高更准确的模型仿真,提高电路辐射加固设计的成功率。
[Abstract]:Compared with traditional bulk silicon, SOI materials have high integration, strong radiation resistance, low power consumption, high speed, suitable for small size devices, which can overcome the shortage of bulk silicon materials and maximize the potential of silicon integrated circuits. Deep submicron devices, three-dimensional integrated circuits and high-temperature electronics have been widely used. SOI CMOS devices have been widely used in aerospace systems, nuclear power equipment electronics, military engineering and other special fields. The radiation effect caused by radiation environment will result in the degradation of the performance of electronic components and integrated circuits, the occurrence of logic errors or permanent damage, which will seriously affect the stability and reliability of electronic systems, and even the complete failure. Therefore, how to improve the radiation resistance of SOI devices has become the focus of research at home and abroad in recent years. In this paper, the physical mechanism, model and model parameters of SOI CMOS devices in irradiated environment are studied, the degradation of total dose irradiation effect to the performance of microelectronic devices is analyzed, and the anti-irradiation model of SOI CMOS is studied. The main work of this paper is as follows: 1. The radiation environment and the basic physical properties of SOI MOSFET devices are described in detail. By analyzing the total dose radiation effect of SOI MOSFET devices and the existing anti-irradiation techniques, The degradation mechanism of electrical characteristics of SOI CMOS devices such as threshold voltage drift, sub-threshold slope change (leakage current increase) and so on are discussed in detail. In order to lay a foundation for the subsequent development of the total dose radiation (SOI MOSFET) structure, the characteristics of total dose radiation resistance of SOI MOSFET devices are described in detail. Based on the device model of circuit simulation and familiar with the modeling process of BiCMOS devices, the establishment of SOI MOSFET anti-irradiation model is completed successfully. It provides a bridge for the connection between the device anti-irradiation process and the circuit design. In this paper, the anti-irradiation characteristics of SOI devices are deeply studied, and on the basis of the Verilog-A model of BSIM3SOI, the extraction and verification of the parameters of the 0.8m SOI CMOS SPICE model are successfully completed, and the anti-irradiation reinforcement model is proposed. It provides more accurate model simulation for circuit design and improves the success rate of circuit radiation reinforcement design.
【学位授予单位】：杭州电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386

【相似文献】