基于GaN HEMT器件的功率放大器的研究
发布时间：2018-09-07 13:03
【摘要】：随着数据通信、无线通信以及航空航天系统的快速发展,射频功率放大器在相控阵雷达、点对点无线通信和电子对抗系统等领域的重要性不断提高。高功率、高效率、低成本和小型化的功率放大器成为目前的研究趋势。以GaN为代表的第三代半导体材料以宽禁带、高电子迁移率、高击穿电场、高热导率、稳定的化学性和强抗辐射能力等特点,逐渐取代GaAs等第二代半导体材料。由GaN制成的高电子迁移率晶体管(GaNHEMT)功率器件,具有工作频段高、功率密度高、耐高压耐高温等优点,目前已经成为研制固态功率放大器的理想器件。本文主要利用GaN HEMT器件研制高功率功率放大器,并研究宽带技术拓宽放大器工作频段。本论文的主要工作如下：1、基于GaN HEMT管的高功率放大模块的分析与设计。采用新型的GaN HEMT功率器件,设计了S波段的高功率放大模块,包含多级级联的射频电路和实现特殊上电时序的控制电路；对电路进行了整体装配,系统地完成了该高功率放大器的设计与测试。测试结果表明：在2.7GHz-2.9GHz的范围,功率放大器增益大于50dB,最大饱和输出功率达到50dBm,功率附加效率(PAE)大于35%,与仿真结果较为吻合。2、基于GaN HEMT管的宽带功率放大器的分析与设计。通过研究功率放大器的宽带设计方法,采用平衡式放大器的结构,分别从宽带匹配、宽带功分网络、偏置电路和散热设计等方面对基于GaN HEMT器件的放大器进行了设计,实现了1GHz至3GHzGaN HEMT宽带功率放大器,制作并测试了实物电路。实测结果与仿真结果一致,验证了平衡式功率放大器设计方案的可行性。
[Abstract]:With the rapid development of data communication, wireless communication and aerospace system, the importance of RF power amplifier in phased array radar, point-to-point wireless communication and electronic countermeasures system is increasing. High power, high efficiency, low cost and miniaturization of power amplifier become the current research trend. The second generation semiconductor materials, such as GaAs, are gradually replaced by the substituted semiconductor materials with the characteristics of wide band gap, high electron mobility, high breakdown electric field, high thermal conductivity, stable chemistry and strong radiation resistance. The main work of this dissertation is as follows: 1. The analysis and design of high power amplifier module based on GaN HEMT transistor. A S-band high power amplifier module is designed, which consists of a multi-stage cascaded RF circuit and a control circuit to realize a special power-on timing. The whole circuit is assembled and the design and test of the high power amplifier are completed systematically. The maximum saturated output power is 50dBm and the power additional efficiency (PAE) is more than 35%, which is in good agreement with the simulation results. 2. Analysis and design of broadband power amplifier based on GaN HEMT transistor. The amplifier based on GaN HEMT device is designed in the aspect of heat dissipation design. The broadband power amplifier from 1GHz to 3GHz GaN HEMT is realized. The practical circuit is fabricated and tested. The experimental results are consistent with the simulation results, which verifies the feasibility of the balanced power amplifier design.
【学位授予单位】：南京理工大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN722.75
，
本文编号：2228341
[Abstract]:With the rapid development of data communication, wireless communication and aerospace system, the importance of RF power amplifier in phased array radar, point-to-point wireless communication and electronic countermeasures system is increasing. High power, high efficiency, low cost and miniaturization of power amplifier become the current research trend. The second generation semiconductor materials, such as GaAs, are gradually replaced by the substituted semiconductor materials with the characteristics of wide band gap, high electron mobility, high breakdown electric field, high thermal conductivity, stable chemistry and strong radiation resistance. The main work of this dissertation is as follows: 1. The analysis and design of high power amplifier module based on GaN HEMT transistor. A S-band high power amplifier module is designed, which consists of a multi-stage cascaded RF circuit and a control circuit to realize a special power-on timing. The whole circuit is assembled and the design and test of the high power amplifier are completed systematically. The maximum saturated output power is 50dBm and the power additional efficiency (PAE) is more than 35%, which is in good agreement with the simulation results. 2. Analysis and design of broadband power amplifier based on GaN HEMT transistor. The amplifier based on GaN HEMT device is designed in the aspect of heat dissipation design. The broadband power amplifier from 1GHz to 3GHz GaN HEMT is realized. The practical circuit is fabricated and tested. The experimental results are consistent with the simulation results, which verifies the feasibility of the balanced power amplifier design.
【学位授予单位】：南京理工大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN722.75
，
本文编号：2228341
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