多层微结构声表面波温补滤波器仿真设计
发布时间：2018-09-09 16:16
【摘要】：声表面波滤波器(SAWF)工作频率在宽温度范围内高度稳定是电子系统频谱控制的关键。已成为当前SAWF发展的主要技术方向。该文提出了基于多层微结构压电材料的的SAWF温度补偿技术方案,实现了基于钽酸锂(LT)压电基片上的温度补偿SAWF设计、仿真,并获得了满意的实验结果。基于LT/Si复合片法实现的SAWF频率温度系数在全温范围(-55~+85℃)内达到25×10~(-6)/℃;基于SiO_2/LT薄膜补偿法实现的SAWF频率温度系数在全温范围(-55~+85℃)内小于10×10~(-6)/℃。研制的温度补偿声表面波滤波器(TC-SAWF)达到要求,已在系统中得到应用。
[Abstract]:The high stability of the (SAWF) operating frequency in the wide temperature range is the key to the spectrum control of the electronic system. Has become the current SAWF development of the main technical direction. In this paper, a SAWF temperature compensation scheme based on multilayer micro structure piezoelectric material is proposed. The design and simulation of temperature compensation SAWF based on lithium tantalate (LT) piezoelectric substrate are realized, and satisfactory experimental results are obtained. The SAWF frequency temperature coefficient based on LT/Si composite method is 25 脳 10 ~ (-6) / 鈩，
本文编号：2232904
[Abstract]:The high stability of the (SAWF) operating frequency in the wide temperature range is the key to the spectrum control of the electronic system. Has become the current SAWF development of the main technical direction. In this paper, a SAWF temperature compensation scheme based on multilayer micro structure piezoelectric material is proposed. The design and simulation of temperature compensation SAWF based on lithium tantalate (LT) piezoelectric substrate are realized, and satisfactory experimental results are obtained. The SAWF frequency temperature coefficient based on LT/Si composite method is 25 脳 10 ~ (-6) / 鈩，
本文编号：2232904
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