一种具有VLD终端结构的600V VDMOS设计
发布时间：2018-09-10 15:32
【摘要】：VDMOS是新一代功率半导体器件,具有优良的电学特性,如输入阻抗高、驱动功率小、安全工作区宽,不仅广泛应用在民用领域,而且在军用领域也得到了很好的应用。VDMOS设计分为元胞区域和终端区域,终端结构的设计通常使用场板/场限环结构。但是使用场板/场限环结构会使得芯片的面积大,生产成本高,性价比低。VLD(Variable Lateral Doping)的终端结构与场板/场限环结构相比大大的减小了终端长度,降低了成产成本,提高了性价比,是新兴的、先进的终端结构。然而由于国内的VDMOS研究起步较晚,制造工艺与技术相对落后,所以基本没有VLD终端结构的产品。因而VLD终端产品的研究对于国内VLD终端产品以及相关产品的开发具有重要意义。本论文在某个相关项目的基础上,分析VLD及相关终端结构的工作机理,并设计相对应的产品。主要的参数指标是:击穿电压大于606 V,阈值电压为2~4 V,通态压降小于1 V,导通电阻小于1.25?。本论文的主要目的是提供一种VLD产品的设计,为后续的相关产品开发提供参照。本论文的主要内容如下:1、简要介绍终端理论,基于项目合作方的工艺平台,设计工艺流程。通过Tsuprem4/Medici软件对工艺步骤进行优化,并进行VDMOS元胞部分的仿真,使得仿真结果满足项目合作方的参数要求。2、通过Tsuprem4/Medici软件进行VDMOS终端部分的仿真。首先采用场板/场限环的终端结构,并对场板/场限环结构进行优化,得到尖峰电场小于2x105 V/cm符合要求的结果。在场板/场限环结构基础上,对终端长度进行缩短,设计VLD结构,仿真得到电场趋于均匀分布、终端长度大大减小的最优结果。3、绘制版图,进行流片试验。目前的流片获得部分静态参数具体结果如下:场限环/场板终端结构基本符合要求,而VLD终端结构的击穿电压为100 V~400 V。结果表明:流片数据部分不满足设计要求。
[Abstract]:VDMOS is a new generation of power semiconductor devices with excellent electrical properties, such as high input impedance, low driving power and wide safe working area. The design of VDMOS is divided into cellular region and terminal area. The design of the terminal structure usually uses the field plate / field limiting ring structure. But using the field board / field limiting ring structure will make the chip large area, high production cost, low performance-price ratio. The terminal structure of .VLD (Variable Lateral Doping) greatly reduces the terminal length, reduces the production cost and improves the performance-price ratio compared with the field board / field limiting ring structure. Is a new, advanced terminal structure. However, due to the late start of VDMOS research and the backward manufacturing process and technology in China, there is basically no product with VLD terminal structure. Therefore, the research of VLD terminal products is of great significance to the development of domestic VLD terminal products and related products. On the basis of a related project, this paper analyzes the working mechanism of VLD and related terminal structure, and designs the corresponding products. The main parameters are as follows: breakdown voltage is more than 606 V, threshold voltage is 2V, on-state voltage drop is less than 1 V, and on-resistance is less than 1.25 V. The main purpose of this paper is to provide a VLD product design for the subsequent related product development. The main contents of this paper are as follows: 1, briefly introduces the terminal theory, based on the process platform of the project partner, designs the process flow. The process steps are optimized by Tsuprem4/Medici software, and the simulation of VDMOS cell part is carried out, which makes the simulation results meet the requirements of the parameter of the project partner. Secondly, the simulation of VDMOS terminal part is carried out by Tsuprem4/Medici software. Firstly, the terminal structure of the field plate / field limiting ring is adopted, and the structure of the field plate / field limiting ring is optimized, and the result that the peak electric field is less than 2x105 V/cm is obtained. On the basis of the field plate / field limiting ring structure, the terminal length is shortened and the VLD structure is designed. The simulation results show that the electric field tends to be uniformly distributed and the terminal length is greatly reduced. Finally, the layout is drawn and the flow sheet test is carried out. At present, some static parameters are obtained as follows: the structure of field limiting ring / field plate terminal basically meets the requirements, while the breakdown voltage of VLD terminal structure is 100V / 400V. The results show that the flow sheet data can not meet the design requirements.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386
[Abstract]:VDMOS is a new generation of power semiconductor devices with excellent electrical properties, such as high input impedance, low driving power and wide safe working area. The design of VDMOS is divided into cellular region and terminal area. The design of the terminal structure usually uses the field plate / field limiting ring structure. But using the field board / field limiting ring structure will make the chip large area, high production cost, low performance-price ratio. The terminal structure of .VLD (Variable Lateral Doping) greatly reduces the terminal length, reduces the production cost and improves the performance-price ratio compared with the field board / field limiting ring structure. Is a new, advanced terminal structure. However, due to the late start of VDMOS research and the backward manufacturing process and technology in China, there is basically no product with VLD terminal structure. Therefore, the research of VLD terminal products is of great significance to the development of domestic VLD terminal products and related products. On the basis of a related project, this paper analyzes the working mechanism of VLD and related terminal structure, and designs the corresponding products. The main parameters are as follows: breakdown voltage is more than 606 V, threshold voltage is 2V, on-state voltage drop is less than 1 V, and on-resistance is less than 1.25 V. The main purpose of this paper is to provide a VLD product design for the subsequent related product development. The main contents of this paper are as follows: 1, briefly introduces the terminal theory, based on the process platform of the project partner, designs the process flow. The process steps are optimized by Tsuprem4/Medici software, and the simulation of VDMOS cell part is carried out, which makes the simulation results meet the requirements of the parameter of the project partner. Secondly, the simulation of VDMOS terminal part is carried out by Tsuprem4/Medici software. Firstly, the terminal structure of the field plate / field limiting ring is adopted, and the structure of the field plate / field limiting ring is optimized, and the result that the peak electric field is less than 2x105 V/cm is obtained. On the basis of the field plate / field limiting ring structure, the terminal length is shortened and the VLD structure is designed. The simulation results show that the electric field tends to be uniformly distributed and the terminal length is greatly reduced. Finally, the layout is drawn and the flow sheet test is carried out. At present, some static parameters are obtained as follows: the structure of field limiting ring / field plate terminal basically meets the requirements, while the breakdown voltage of VLD terminal structure is 100V / 400V. The results show that the flow sheet data can not meet the design requirements.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386
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