新型晶体管的制备与分析研究
发布时间：2018-09-11 18:56
【摘要】：有机薄膜晶体管(OTFT)是现下研究的热点,它在OLEDs、传感器以及射频识别领域有着广泛的应用。但是有机薄膜晶体管也有很多地方需要改进,比如迁移率的提高、开关电流比的提高以及工程应用等。①本文简要介绍了OTFT的研究进展及热点问题,介绍了有机薄膜晶体管的基本结构、工作机理以及表征OTFT性能的重要参数。本文详细论述了OTFT器件的制备流程,包括使用的仪器、制备的工艺和测试方法。②针对传统OTFT场效应迁移率低,阈值电压高的不足,本文提出了一种通过电极修饰改善OTFT性能的方法。由于传统OTFT的电极与有源层接触时受到金半接触势垒的影响,载流子注入受限,这样直接导致了器件的低场效应迁移率和高阈值电压。本文在电极与有源层之间添加一层极薄的氟化锂(Li F),很好的改善了器件的场效应迁移率和阈值电压。研究表明,当Li F薄层厚度在0到1.2nm时,器件的场效应迁移率上升,阈值电压下降。而当Li F薄层厚度进一步增大到1.5nm时,器件性能退化。③本文重点研究了一种新型有机异质结晶体管。针对现有的双极型晶体管关态电流高、开-关电流比低的缺点,本文研究的新型有机异质结晶体管在修饰过的二氧化硅上沉积P型并五苯薄层,再在其上沉积N型全氟酞菁铜有源层,通过异质结效应,大大增加了沟道中自由载流子的数量,进而提高了器件性能。同时研究表明,通过精确控制和优化第一层并五苯的厚度为1nm时,可以使这种晶体管在提高迁移率的同时,很好地控制了关态电流,因此满足迁移率与开-关电流比两项指标同时提高的目的。本文还通过异质结理论和AFM检测图重点解释了并五苯厚度对器件性能影响的原因,阐述了绝缘层之上的半导体层厚度、薄膜表面形态以及薄膜的结晶度三方面的矛盾关系。最后得出结论,当并五苯薄层厚度为1nm时,绝缘层之上的半导体层厚度、薄膜表面形态以及薄膜的结晶度这三种因素得以最好的协调、平衡,因此器件性能达到最佳。
[Abstract]:Organic thin film transistor (OTFT) is a hot topic in recent years. It has been widely used in the field of OLEDs, sensors and radio frequency identification (RFID). However, organic thin film transistors also need to be improved, such as the increase of mobility, the increase of switching current ratio and engineering application. 1. This paper briefly introduces the research progress and hot issues of OTFT. The basic structure, working mechanism and important parameters of OTFT are introduced. In this paper, the fabrication process of OTFT devices is discussed in detail, including the instruments used, the fabrication process and the testing methods. 2. Aiming at the shortcomings of low mobility and high threshold voltage of traditional OTFT, the paper describes the characteristics of this method. In this paper, a method to improve the performance of OTFT by electrode modification is proposed. Due to the influence of gold semi-contact barrier on the electrode of traditional OTFT, the carrier injection is limited, which directly leads to the low field effect mobility and high threshold voltage of the device. In this paper, the addition of a thin layer of lithium fluoride (Li F), between the electrode and the active layer improves the field effect mobility and threshold voltage of the device. The results show that when the thickness of Li F thin layer is 0 to 1.2nm, the field effect mobility increases and the threshold voltage decreases. However, when the thickness of Li F thin layer increases to 1.5nm, the performance of the device degenerates. 3 in this paper, a novel organic heterojunction transistor is studied. In view of the shortcomings of the existing bipolar transistors with high on-off current and low on-off current ratio, the novel organic heterojunction transistors have been deposited on the modified silicon dioxide with P-type pentabenzene thin layer. Then the N-type perfluorophthalocyanine copper active layer is deposited on it. The heterojunction effect greatly increases the number of free carriers in the channel and thus improves the device performance. At the same time, it has been shown that by accurately controlling and optimizing the thickness of the first layer of pentacene to be 1nm, the transistor can improve the mobility of the transistor and control the turn-off current at the same time. Therefore, the mobility and on-off current ratio are increased simultaneously. Based on the heterojunction theory and the AFM detection diagram, the reasons for the influence of pentabenzene thickness on the performance of the device are explained, and the contradictory relationships between the thickness of semiconductor layer on the insulation layer, the surface morphology of the film and the crystallinity of the film are expounded. Finally, it is concluded that when the thickness of penta-benzene thin layer is 1nm, the thickness of semiconductor layer, the surface morphology of the film and the crystallinity of the film are best coordinated and balanced, so the device performance is the best.
【学位授予单位】：重庆大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN321.5
[Abstract]:Organic thin film transistor (OTFT) is a hot topic in recent years. It has been widely used in the field of OLEDs, sensors and radio frequency identification (RFID). However, organic thin film transistors also need to be improved, such as the increase of mobility, the increase of switching current ratio and engineering application. 1. This paper briefly introduces the research progress and hot issues of OTFT. The basic structure, working mechanism and important parameters of OTFT are introduced. In this paper, the fabrication process of OTFT devices is discussed in detail, including the instruments used, the fabrication process and the testing methods. 2. Aiming at the shortcomings of low mobility and high threshold voltage of traditional OTFT, the paper describes the characteristics of this method. In this paper, a method to improve the performance of OTFT by electrode modification is proposed. Due to the influence of gold semi-contact barrier on the electrode of traditional OTFT, the carrier injection is limited, which directly leads to the low field effect mobility and high threshold voltage of the device. In this paper, the addition of a thin layer of lithium fluoride (Li F), between the electrode and the active layer improves the field effect mobility and threshold voltage of the device. The results show that when the thickness of Li F thin layer is 0 to 1.2nm, the field effect mobility increases and the threshold voltage decreases. However, when the thickness of Li F thin layer increases to 1.5nm, the performance of the device degenerates. 3 in this paper, a novel organic heterojunction transistor is studied. In view of the shortcomings of the existing bipolar transistors with high on-off current and low on-off current ratio, the novel organic heterojunction transistors have been deposited on the modified silicon dioxide with P-type pentabenzene thin layer. Then the N-type perfluorophthalocyanine copper active layer is deposited on it. The heterojunction effect greatly increases the number of free carriers in the channel and thus improves the device performance. At the same time, it has been shown that by accurately controlling and optimizing the thickness of the first layer of pentacene to be 1nm, the transistor can improve the mobility of the transistor and control the turn-off current at the same time. Therefore, the mobility and on-off current ratio are increased simultaneously. Based on the heterojunction theory and the AFM detection diagram, the reasons for the influence of pentabenzene thickness on the performance of the device are explained, and the contradictory relationships between the thickness of semiconductor layer on the insulation layer, the surface morphology of the film and the crystallinity of the film are expounded. Finally, it is concluded that when the thickness of penta-benzene thin layer is 1nm, the thickness of semiconductor layer, the surface morphology of the film and the crystallinity of the film are best coordinated and balanced, so the device performance is the best.
【学位授予单位】：重庆大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN321.5
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