硅掺杂双有源层氧化锌薄膜晶体管的制备及特性研究
发布时间：2018-09-19 20:28
【摘要】：随着信息技术的高速发展,对于显示技术的要求越来越高,以有源矩阵液晶显示器(AMLCD)和有源矩阵有机发光二极管显示器(AMOLED)为代表的平板显示技术得到了迅速发展,占据着平板显示的主流市场。薄膜晶体管(TFT)是AMLCD和AMOLED中关键的开关和驱动器件,氧化锌薄膜晶体管(Zn O-TFT)由于其迁移率高、制备工艺简单、低温工艺、可见光透明等优点,被认为是最有希望的下一代TFT技术。但Zn O-TFT的电特性和稳定性还有待进一步提高,以应用于要求越来越高的平板显示技术中。因此开展Zn O基TFT的掺杂,有源层结构和稳定性的研究,对促进Zn O-TFT的发展和应用具有重要意义。本文用磁控溅射法制备Zn O及掺Si Zn O(SZO)薄膜作为TFT有源层,制备了单层有源层的Zn O-TFT和掺硅氧化锌薄膜晶体管(SZO-TFT)以及SZO/Zn O双层有源层结构的TFT器件(SZO/Zn O-TFT),并比较了它们的电特性和稳定性,主要的研究工作和结果包括:(1)研究了基底温度和硅含量对SZO薄膜的透光性和SZO-TFT电性能的影响。结果表明:基底温度在100℃到250℃范围制备的SZO薄膜在可见光范围的透过率都大于85%,基底温度150℃时所制备的SZO-TFT的综合性能最佳;随着Zn O薄膜中硅含量的增加,SZO薄膜能隙宽度增加,导致在可见光范围内透光率增加。适当的硅掺入Zn O薄膜有源层中,可有效抑制SZO-TFT器件的关态电流,提高开关电流比达两个数量级,但器件的载流子迁移率和饱和漏电流有所降低。(2)研究了Zn O-TFT,SZO-TFT和SZO/Zn O-TFT的电特性。结果表明,通过采用SZO/Zn O双有源层结构,可以在不降低Zn O-TFT载流子迁移率的情况下有效提高开关电流比近两个数量级,从而使器件的整体性能得到有效改善。(3)研究了Zn O-TFT,SZO-TFT和SZO/Zn O-TFT在正栅压和漏电压应力下的稳定性。结果表明,双有源层结构的SZO/Zn O-TFT在正栅偏应力和漏偏压应力下的稳定性都得到明显改善,这来源于SZO/Zn O薄膜界面处电子势垒的形成和SZO薄膜中氧空位的减小。(4)研究了Zn O-TFT和SZO/Zn O-TFT在空气中的稳定性。实验结果表明,相比Zn O-TFT,双有源层结构的SZO/Zn O-TFT在空气环境下的稳定性明显得到改善,这是由于SZO/Zn O-TFT暴露于空气的SZO薄膜比Zn O薄膜结构更致密,阻止氧和水汽侵蚀底部Zn O沟道层,抑制了背沟道效应所致。
[Abstract]:With the rapid development of information technology, the demand for display technology is becoming higher and higher. The flat panel display technology, represented by active matrix liquid crystal display (AMLCD) and active matrix organic light-emitting diode display (AMOLED), has been developed rapidly. It dominates the mainstream market for flat panel display. Thin film transistor (TFT) is the key switch and driver in AMLCD and AMOLED. Zinc oxide thin film transistor (Zn O-TFT) is considered to be the most promising next generation TFT technology because of its high mobility, simple fabrication process, low temperature process and transparent visible light. However, the electrical characteristics and stability of Zn O-TFT need to be further improved in order to be used in more and more demanding flat panel display technology. Therefore, it is of great significance to study the doping, active layer structure and stability of Zn O based TFT to promote the development and application of Zn O-TFT. In this paper, Zn O and Si Zn O (SZO) doped thin films were prepared by magnetron sputtering as the active layer of TFT. Monolayer active layer Zn O-TFT, silicon-doped zinc oxide thin film transistor (SZO-TFT) and SZO/Zn O bilayer active layer TFT device (SZO/Zn O-TFT) were fabricated, and their electrical characteristics and stability were compared. The main results are as follows: (1) the effects of substrate temperature and silicon content on the transmittance and SZO-TFT electrical properties of SZO thin films were investigated. The results show that the transmittance of SZO films prepared at the substrate temperature range from 100 鈩，
本文编号：2251250
[Abstract]:With the rapid development of information technology, the demand for display technology is becoming higher and higher. The flat panel display technology, represented by active matrix liquid crystal display (AMLCD) and active matrix organic light-emitting diode display (AMOLED), has been developed rapidly. It dominates the mainstream market for flat panel display. Thin film transistor (TFT) is the key switch and driver in AMLCD and AMOLED. Zinc oxide thin film transistor (Zn O-TFT) is considered to be the most promising next generation TFT technology because of its high mobility, simple fabrication process, low temperature process and transparent visible light. However, the electrical characteristics and stability of Zn O-TFT need to be further improved in order to be used in more and more demanding flat panel display technology. Therefore, it is of great significance to study the doping, active layer structure and stability of Zn O based TFT to promote the development and application of Zn O-TFT. In this paper, Zn O and Si Zn O (SZO) doped thin films were prepared by magnetron sputtering as the active layer of TFT. Monolayer active layer Zn O-TFT, silicon-doped zinc oxide thin film transistor (SZO-TFT) and SZO/Zn O bilayer active layer TFT device (SZO/Zn O-TFT) were fabricated, and their electrical characteristics and stability were compared. The main results are as follows: (1) the effects of substrate temperature and silicon content on the transmittance and SZO-TFT electrical properties of SZO thin films were investigated. The results show that the transmittance of SZO films prepared at the substrate temperature range from 100 鈩，
本文编号：2251250
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