ZnPc单晶场效应晶体管及其光电性质研究

发布时间：2018-10-05 20:28

【摘要】：有机单晶具有优异的长程有序性且具有很低的载流子陷阱密度,有利于载流子的传输。目前,单晶是研究载流子本征传输特性的理想模型。对于同一种材料而言,相比于它的薄膜,通常单晶场效应晶体管能够获得更高的器件性能,因此,单晶是制备高性能器件的最佳选择之一。酞菁类材料因其具有良好的化学和热稳定性以及很好的光电性能,受到研究者的广泛关注。酞菁锌是其中一种典型的p型有机小分子半导体材料,具有很好的光敏性,被应用在场效应晶体管、双极性晶体管、太阳能电池等方面。本论文以ZnPc为材料,利用物理气相输运法生长ZnPc单晶,并制备ZnPc单晶场效应晶体管,研究其电学及光电性能。内容如下:1.利用物理气相输运的方法首次制备了高结晶性的ZnPc单晶纳米带,并对其进行表征。通过对其生长形貌的表征可知,其长度从20μm到150μm,宽度约为几百纳米到几微米。2.基于高质量的ZnPc单晶,利用机械探针转移法制备ZnPc单晶场效应晶体管,并对其进行电学性能测试。研究了在不同绝缘层上的器件性能,通过优化在OTS修饰的SiO2绝缘层上获得的器件性能高达0.75 cm2V-1s-1,是目前报道的最高值。3.基于高性能的ZnPc单晶场效应晶体管,研究其光电性能。在单一波长(651nm)光照下,ZnPc单晶光晶体管展现了很好的光敏特性,其光暗电流比(Ilight/Idark)高达7.34×103,光响应率高达1.57×104 AW-1。研究结果表明光波长、光强、VSD以及VG都能够作为一个独立的变量实现对ZnPc单晶场效应晶体管光电性能的调控。
[Abstract]:Organic single crystals have excellent long range order and low carrier trap density, which is favorable for carrier transport. At present, single crystal is an ideal model for studying the intrinsic transport characteristics of carriers. For the same material, compared with its thin films, single crystal field effect transistors can obtain higher device performance. Therefore, single crystal is one of the best choices to fabricate high performance devices. Phthalocyanine materials have attracted much attention because of their good chemical and thermal stability and good photoelectric properties. Zinc phthalocyanine is one of the typical p-type organic small molecular semiconductors with good Guang Min properties. It is used in field effect transistors, bipolar transistors, solar cells and so on. In this paper, ZnPc single crystals were grown by physical vapor transport method using ZnPc as materials, and ZnPc single crystal field effect transistors were fabricated. The electrical and photoelectric properties of ZnPc single crystal transistors were studied. It reads as follows: 1. ZnPc nanobelts with high crystallinity were prepared and characterized by physical vapor transport for the first time. It was found that the length was from 20 渭 m to 150 渭 m and the width was from several hundred nanometers to several microns. Based on high quality ZnPc single crystals, ZnPc single crystal field effect transistors were fabricated by mechanical probe transfer method and their electrical properties were tested. The device performance on different insulating layers is studied. The device performance on OTS modified SiO2 insulator is as high as 0.75 cm2V-1s-1, which is the highest reported value at present. Based on the high performance ZnPc single crystal field effect transistor, the photoelectric performance of the transistor is studied. Under single wavelength (651nm) illumination, ZnPc single crystal phototransistors exhibit good Guang Min characteristics. Their Ilight/Idark is up to 7.34 脳 10 ~ 3 and the optical responsivity is 1.57 脳 10 ~ 4 AW-1.. The results show that the optical wavelength, intensity VSD and VG can be used as an independent variable to control the optoelectronic performance of ZnPc single crystal field-effect transistors.
【学位授予单位】：东北师范大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386

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