PIN隧穿场效应晶体管的特性分析与设计优化

发布时间：2018-10-08 19:11

【摘要】：集成电路的最小核心单元结构是晶体管，其尺寸的不断缩小是集成电路技术发展的源动力，也是微电子科学与技术的发展主流，其目的是为实现高性能，低运行功率，低待机功耗和高集成度。然而，在深亚微米（小于100纳米）或纳米级（十几个或几个纳米）领域，，一些常规尺寸工艺下所不存在的负面效应随之而来，随着尺寸的缩小，阈值电压下降，亚阈值摆幅退化，漏感应势垒降低，沟道随机掺杂引发的器件特性的波动，电隧穿导致的泄漏电流，结处带带隧穿等，对集成电路的性能和可靠性将产生严重影响。本文介绍了PN结隧穿原理（带带隧穿），MOSFET的工作原理（载流子的扩散与漂移）与优缺点。对传统的PIN隧穿场效应晶体管（TFET）进行研究，并根据隧穿几率的影响因子来研究器件结构和参数对TFET性能的影响，通过改变绝缘层材料和厚度，源极和漏极的掺杂浓度以及源区向沟道延伸的结构来对器件进行优化，并用silvaco仿真软件对各种结构和参数的PINTFET进行仿真比较，完成对传统PINTFET结构和参数上的优化，这种优化的结构相比于传统的PIN结构，开启电流可提高约6000倍，反向电流可降低至50000倍甚至更低，亚阈值摆幅（SS）低于60mv/dec。TFET在功耗，开关转换，尺寸等方面的特性是优于MOSFET的。
[Abstract]:The smallest core unit structure of integrated circuit is transistor. The decreasing of its size is the source power of the development of integrated circuit technology and the mainstream of microelectronics science and technology. Its purpose is to achieve high performance and low running power. Low standby power and high integration. However, in deep submicron (less than 100 nanometers) or nanoscale (a dozen or several nanometers), negative effects that do not exist in some conventional size processes follow, and as the size shrinks, the threshold voltage drops, The degradation of sub-threshold swing, the decrease of leakage inductive barrier, the fluctuation of device characteristics caused by random channel doping, the leakage current caused by tunneling, and the bandband tunneling at junction will seriously affect the performance and reliability of integrated circuits. This paper introduces the principle of tunneling (with band tunneling) and the advantages and disadvantages of PN junction tunneling principle (carrier diffusion and drift). The traditional PIN tunneling field effect transistor (TFET) is studied. According to the influence factor of tunneling probability, the influence of device structure and parameters on the performance of TFET is studied. The doping concentration of source and drain and the structure extending from source to channel are used to optimize the device. The PINTFET of various structures and parameters are simulated and compared with silvaco simulation software to optimize the structure and parameters of traditional PINTFET. Compared with the traditional PIN structure, the optimized structure can increase the opening current by about 6000 times, reduce the reverse current to 50000 times or even lower. The sub-threshold swing (SS) is lower than the 60mv/dec.TFET in power consumption, switch conversion, size and so on. It is superior to MOSFET in power consumption, switch conversion, size and so on.
【学位授予单位】：沈阳工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386

【共引文献】