氮化硅的ECCP刻蚀特性研究

发布时间：2018-10-09 14:52

【摘要】：本文对氮化硅的增强电容耦合等离子刻蚀进行研究,为氮化硅刻蚀工艺的优化提供参考。针对SF_6+O_2气体体系,通过设计实验考察了功率、压强、气体比、氦气等对刻蚀速率和均一性的影响,并对结果进行机理分析和讨论。实验结果表明:功率越大,刻蚀速率越大,与源极射频电力相比,偏置射频电力对刻蚀速率的影响更为显著;压强增大,刻蚀速率增大,但压强增大到一定程度后,刻蚀速率基本不变,刻蚀均匀性随着压强增大而变差;在保证SF_6/O_2总流量保持不变下,O_2的比例增大,刻蚀速率先增大后减小,刻蚀均匀性逐步变好;He的添加可以改善刻蚀均匀性,但He的添加量过多时,会造成刻蚀速率降低。
[Abstract]:In this paper, the enhanced capacitive coupled plasma etching of silicon nitride is studied, which provides a reference for the optimization of silicon nitride etching process. The effects of power, pressure, gas ratio and helium gas on etching rate and uniformity of SF_6 O _ 2 gas system were investigated by designing experiments. The mechanism of the results was analyzed and discussed. The experimental results show that the higher the power, the higher the etching rate. Compared with the source RF power, the bias RF power has more significant effect on the etching rate, the pressure increases, the etching rate increases, but the pressure increases to a certain extent. The etching rate is basically unchanged, the etching uniformity becomes worse with the increase of pressure, and the proportion of O _ S _ 2 increases under the condition of keeping the total SF_6/O_2 flow constant, the etching rate increases first and then decreases, and the etching uniformity is improved gradually by the addition of he. However, when the amount of He is too much, the etching rate will be reduced.
【作者单位】：北京京东方显示技术有限公司;
【分类号】：TN305.7

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