基区变化对p-i-n型二极管性能的影响

发布时间：2018-10-09 16:41

【摘要】：p-i-n二极管相对于p-n结二极管增加了一个本征区(又称为基区),这使它更广泛的应用于整流、限幅、射频、光电探测器等电力电子、光电子领域,基区的变化可以影响二极管的性能。使用MATLAB模拟了不同组分的In(Al)xGa(1-x)N材料的势垒注入渡越时间(BARITT)二极管的特性,主要分析电流-电压关系、单位面积电导-电压关系、低场区与基区的分界点-电压的关系;对比了两种材料组份不同时,BARITT二极管的负阻特性以及电导、电纳与频率的关系。利用PECVD技术研制了p +型纳米晶硅/n-型单晶硅/n+型纳米晶硅((p+)nc-Si/(n-)c-Si/(n+)nc-Si)快恢复二极管;进一步地,在它的阴极结基区一侧嵌入(p+)nc-SiC埋层形成控制背面空穴注入(CIBH)结构。对比了有、无(p+)nc-SiC埋层的二极管的电容-电压关系、电流-电压曲线、反向恢复波形,讨论了(p+)nc-SiC在二极管的动态和静态过程中起的重要作用。结果表明,含(p+)nc-SiC埋层的二极管的抗雪崩耐性、反向恢复性能得到改善。
[Abstract]:Compared with p-n junction diodes, p-i-n diodes have added an intrinsic region (also known as base region), which makes it more widely used in power electronics, optoelectronics, such as rectifier, limiting, RF, photodetector, etc. Changes in the base region can affect the performance of the diode. MATLAB is used to simulate the characteristics of barrier injection transition time (BARITT) diodes for In (Al) xGa (1-x) N materials with different components. The relationship between current and voltage, conductance to voltage per unit area, and the relationship between boundary point and voltage in low field and base region are analyzed. The negative resistance characteristics and the relationship between conductance, electrical conductivity and frequency of the two materials are compared. The p-type nanocrystalline silicon / n- type monocrystalline silicon (p) nc-Si/ (n-) c-Si/ (n) nc-Si fast recovery diode has been fabricated by using PECVD technique. Furthermore, a controlled backside hole injection (CIBH) structure has been formed by embedding a (p) nc-SiC buried layer on one side of the cathode junction base region of p-type nanocrystalline silicon / n- type nanocrystalline silicon (p) nc-Si/ (n-) c-Si/ (n) nc-Si. The capacitance-voltage relationship, current-voltage curve and reverse recovery waveform of diodes without (p) nc-SiC buried layer are compared. The important role of (p) nc-SiC in the dynamic and static process of diodes is discussed. The results show that the avalanche resistance and reverse recovery of the diodes with (p) nc-SiC buried layer are improved.
【学位授予单位】：温州大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN312.4

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