一种高压IGBT半桥驱动芯片设计

发布时间：2018-10-12 18:15

【摘要】：能源严重匮乏的今天,节能减排已成为当下的热点,实现电机高效驱动已变得愈发的重要。由于IGBT兼具了MOSFET和GTR在电机驱动应用中的优点,IGBT在电机驱动中作为开关管的优势愈发的明显,实现IGBT可靠、高效的驱动成为了电机高效驱动的关键。本文依托实验室现有的工艺平台设计的高压IGBT半桥驱动电路主要运用于驱动半桥拓扑结构中作为开关管的IGBT,根据应用要求,本款电路希望达到的指标:隔离最高耐压可达600 V,电流的峰值输出电流可达+1 A/-2 A,具有完善的保护功能,并实现低功耗要求。本文拟采用国外一种前沿的隔离技术来实现高低端信号传输的隔离,驱动输出级采用双NMOS作为输出功率器件提高电路的输出电路能力,添加过温保护,欠压保护,留出使能端口来实现驱动电路的可靠性工作。本文首先介绍了高压器件和隔离技术的基本原理和电路的整体架构,根据整体架构介绍了四个子电路的设计思想:输出级电路添加施密特触发器来实现3.3V/5 V输入信号的兼容;逻辑控制电路通过逻辑运算实现对整个电路的控制;输出驱动级对输入控制逻辑信号实现功率放大以驱动后级输出NMOS管,采用双NMOS作为输出器件,提高输出电流能力,并在输出驱动级内部加入欠压保护模块与外部欠压保护电路相配合实现整个电路的可靠性工作;整体电路内部添加欠压保护、过温保护和留出使能端口来实现整个电路高效、稳定的工作。另外电路利用激励电源产生电路将电源电压转化为5 V电平给芯片内部实现供电,实现芯片内部的低功耗。最后运用仿真软件对各个子模块和低端驱动通道整体进行仿真,并对仿真结果进行分析,实现对理论的验证。
[Abstract]:Nowadays, energy saving and emission reduction has become a hot spot, and the realization of efficient motor drive has become more and more important. Because IGBT has the advantages of both MOSFET and GTR in motor driving, the advantage of IGBT as switch tube in motor drive becomes more and more obvious. The realization of IGBT is reliable and efficient driving has become the key to efficient drive of motor. In this paper, the high-voltage IGBT half-bridge drive circuit, which is designed based on the existing technology platform in the laboratory, is mainly used in the drive half-bridge topology, which is used as a switch tube according to the application requirements. The aim of this circuit is that the maximum isolation voltage can reach 600V, the peak output current of current can reach 1 A / -2 A, and it has perfect protection function and low power requirement. In this paper, a foreign advanced isolation technology is used to realize the isolation of the signal transmission at the high and low end. The output stage uses double NMOS as the output power device to improve the output circuit capability, to add the over-temperature protection and the under-voltage protection. The power port is reserved for the reliability of the drive circuit. This paper first introduces the basic principle of high voltage device and isolation technology and the whole structure of the circuit. According to the overall structure, the design idea of four sub-circuits is introduced: the output circuit adds Schmitt flip-flop to realize the compatibility of 3.3V/5 V input signal; The logic control circuit controls the whole circuit through logic operation, the output drive stage amplifies the input control logic signal to drive the output NMOS transistor, and uses double NMOS as the output device to improve the output current capacity. In the output drive stage, an under-voltage protection module and an external under-voltage protection circuit are added to realize the reliability of the whole circuit, and the whole circuit is implemented by adding the under-voltage protection, over-temperature protection and leaving the output energy port to realize the high efficiency of the whole circuit. A steady job. In addition, the circuit uses the exciting power generation circuit to convert the power supply voltage to 5 V level to supply power inside the chip to realize the low power consumption inside the chip. Finally, the simulation software is used to simulate each sub-module and low-end driving channel, and the simulation results are analyzed to verify the theory.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN322.8

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