应用螺旋型分压器的硅漂移室探测器电学特性仿真

发布时间：2018-10-14 08:23

【摘要】：硅漂移室探测器,基于侧向耗尽原理,由E.Gatti和P.Rehak两位科学家在1983年首先提出来的。首先只是把它作为二维位置灵敏的探测器提出的。后来,把它应用到了高分辨X射线光谱学中,发现这种探测器的位置分辨力和能量灵敏度都非常高,因此,它逐渐的取代了传统的Si-PIN类探测器,在X光谱仪中被广泛的应用,在航空航天、宇宙探索方面的应用也越来越重要,取得的成就也越来越多。硅漂移室探测器,基于平面工艺技术,由于只有一个阳极在探测器上表面的中心,而且阳极的面积可以非常小,整个探测器的灵敏区体积比较大,电容小,灵敏度高,能量分辨率好,还有二维位置分辨能力。因为有这些特点,自提出来以后,有许许多多的科学家投入到硅漂移室探测器的研究中去,后来硅漂移探测器主要形成了两大分支:线性几何形状的硅漂移室探测器和圆形的硅漂移室探测器。这篇文章中所研究的应用螺旋形分压器的硅漂移室探测器属于圆形的硅漂移室探测器。根据形状的不同,应用螺旋形分压器的硅漂移室探测器可以分为四棱柱形的、六棱柱形的和圆柱形的。本文是以四棱柱形的应用螺旋形分压器的硅漂移室探测器为主要研究对象,借助半导体器件仿真软件Sentaurus TCAD对它和传统的螺旋型硅漂移室探测器进行电学特性仿真,并对比了它们的电学特性,得出了在能够保持较好的性能的基础上还能解决传统螺旋型硅漂移室不能做成大阵列的局限性问题。我们所做的是对应用螺旋形分压器的硅漂移室探测器进行三维器件仿真。这样的结构在2014年才被提出了,主要是对它进行理论研究,还没有对它进行三维仿真过,因此,我们做的工作是首次的。在这篇文章中,我们主要是仿真了它的电势分布、电场分布以及电子浓度分布,通过这些电学特性可以知道该探测器在它的内部会形成一条电子漂移轨道。应用重离子入射模型,我们还动态的看到了电子在探测器内部的漂移情况。
[Abstract]:The silicon drift chamber detector, based on the principle of lateral depletion, was first proposed by two scientists, E.Gatti and P.Rehak, in 1983. First, it was proposed as a two-dimensional position sensitive detector. Later, it was applied to high resolution X-ray spectroscopy, and it was found that the position resolution and energy sensitivity of this kind of detector were very high. Therefore, it gradually replaced the traditional Si-PIN detector and was widely used in X-ray spectrometer. In aerospace, space exploration applications are becoming more and more important, and more achievements have been made. The silicon drift chamber detector, based on planar technology, because there is only one anode in the center of the upper surface of the detector, and the area of the anode can be very small, the sensitive region of the whole detector is relatively large, the capacitance is small, and the sensitivity is high. Good energy resolution, and two-dimensional position resolution. Because of these characteristics, since they were proposed, many scientists have been involved in the research of silicon drift chamber detectors. Then the silicon drift detector formed two main branches: the linear geometry silicon drift chamber detector and the circular silicon drift chamber detector. The silicon drift chamber detector with spiral voltage divider in this paper belongs to the circular silicon drift chamber detector. According to the shape, the silicon drift chamber detector with spiral voltage divider can be divided into four prisms, six prisms and cylinders. In this paper, a four-prism silicon drift chamber detector with spiral voltage divider is used as the main research object. The electrical characteristics of the detector and the traditional spiral silicon drift chamber detector are simulated by the semiconductor device simulation software Sentaurus TCAD. By comparing their electrical properties, it is concluded that the traditional spiral silicon drift chamber can not be made into a large array on the basis of good performance. What we do is to simulate the silicon drift chamber detector with spiral voltage divider. Such a structure was proposed in 2014, mainly for theoretical research, and has not been simulated in 3D, so our work is for the first time. In this paper, we mainly simulate its potential distribution, electric field distribution and electron concentration distribution. Through these electrical properties, we can know that the detector will form an electron drift orbit in its interior. Using the heavy ion incident model, we also dynamically see the electron drift inside the detector.
【学位授予单位】：湘潭大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN303

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